The influence of light on fatigue in PZT films with planar electrodes

• Autorzy: Czekaj D. , Surowiak Z. , Dudkievich V. P. , Sem I. M. , Sviridov E. V.
• Języki publikacji: EN

Abstrakty

EN

Degradation properties, such as a low voltage breakdown, fatigue, and ageing of ferroelectrics are believed to be the major problems of ferroelectric films affecting their lifetime. Although these properties have been studied for a long time, the information is still insufficient for both a quality improvement of ferroelectric devices and their lifetime predictions. Degradation mechanisms should be studied for the lifetime prediction, as well as for material development. Fatigue is the decrease in switchable polarization with increasing number of polarization reversals. In this paper, general features and the mechanisms of fatigue are briefly referred to and the light influence on fatigue in PZT films is discussed. A set of fatigue measurements has been performed on RF-sputtered PZT films of about 2žm in thickness. Polarization switching characteristics by applying sinusoidal a.c. electric fields were studied both with sandwich-type and planar electrodes. The planar structure has allowed for the study of the influence of the free charge carries induced by UV - illumination in the planar capacitor gap. The fatigue became noticeable after 106 switching cycles for a sandwich structure and after 109 those cycles for films with planar electrodes. The film illumination during the polarization switching accelerates significantly the fatigue process. The additional fatigue induced by the photoactive light was completely reversible. Of special importance is the fact that the films on metal substrates (sandwich-capacitor) were fatigued more rapidly than those on dielectric substrates (planar capacitor), though they were prepared under the same conditions. This evidences the major contribution of transition layers to the development of the fatigue process that agrees well with the model of fatigue proposed in the literature.

• Wydawca: Instytut Podstawowych Problemów Techniki PAN ; Komitet Akustyki PAN ; Polskie Towarzystwo Akustyczne
• Czasopismo: Archives of Acoustics
• Rocznik: 1998
• Tom: Vol. 23, no. 3
• Strony: 443--450
• Opis fizyczny: Bibliogr. 42 poz., rys., wykr.

Twórcy

autor

Czekaj D.

• University of Silesia, Institute of Engineering Problems, Sosnowiec, Poland

autor

Surowiak Z.

• University of Silesia, Institute of Engineering Problems, Sosnowiec, Poland

autor

Dudkievich V. P.

• Institute of Physics Department of Crystal Physics, Rostov, Russia

autor

Sem I. M.

• Institute of Physics Department of Crystal Physics, Rostov, Russia

autor

Sviridov E. V.

• Institute of Physics Department of Crystal Physics, Rostov, Russia

Bibliografia

• [1] K. Okamoto, Y. Nasu, Y. Hamakawa, Low-treshold-voltage thin-film electroluminescent devices, IEEE Trans. Elec. Dev., ED-28, 6, pp. 698-702 (1981).
• [2] R. Khamankar, J. Kim, B. Jiang, C. Sudhama, P. Maniar, R. Moazzami, R. Jones, J. Lee, Impact of post processing damages on performance of high dielectric constant PLZ T thin film capacitors for VLSI DR AM applications, International Electron Devices Meeting, San Francisco, CA, December 11-14, 1994, IEDM Technical Digest, pp. 337-340 (1994).
• [3] Z. Surowiak, D. Czekaj, A.A. Bakirov, V.P. Dudkevich, Czujniki odkształceń dynamicznych na bazie cienkich warstw elektrycznych typu PZT, Elektronika, 1, pp. 12-19 (1994); Dynamical Deformation Sensors Based on Thin Ferroelectric PZT Films, Thin Solid Films, 256, pp. 226-233 (1995).
• [4] D. Czekaj, Z. Surowiak, A.A. Bakirov, V.P. Dudkevich, Piezoelektryczne sensory odkształceń mechanicznych na bazie cienkich warstw LiNbC>3 i BaTiO3, Akustyka Molekularna i Kwantowa, 15, pp. 43-57 (1994).
• [5] N .F . Foster, The deposition and piezoelectric characteristics of sputtered lithium niobate films, J.A ppl. Phys., 40, 1, pp. 420-423 (1969).
• [6] J. Dudek, Piezoelectric acoustotransducers SA W on the basis of Pb(Zr ,Ti)O3, The 8th Piezoelectric Conference PIE ZO’94, 5-7 October 1994, Zakopane, Poland. Proceedings, Tele &c Radio Research Institute, pp. 359-364 (1995).
• [7] H. Adachi, T. Mitsuya, O. Yamazaki, K. Wasa, Ferroelectric (Pb,La )(Z r,T i) O 3 epitaxial thin films on sapphire grown by rf-magnetron sputtering, J.A ppl. Phys., 60, pp. 736-741 (1986).
• [8] Z. Surowiak, V.P. Dudkevich, Cienkie warstwy ferroelektryczne, Wyd. Uniw. Ś1., Katowice, (1996) p. 331.
• [9] K.R. Udayakumar, J. Chen, A.M. Flynn, S.F. Bart, L.S. Tavrov, D.J. Ehrlich, L.E. Cross, R.A. Brooks, Ferroelectric thin films for piezoelectric micromotors, Ferroelectrics, 160, pp. 347-356 (1994).
• [10] W.Y. Pan, S. Sun, B.A. Tuttle, Electromechanical and dielectric instability induced by electric field cycling in ferroelectric ceramic actuators, Smart Mater. Stru ct., 1, pp. 286-293 (1992).
• [11] D. Bondurant, F. Gnadinger, Ferroelectrics for nonvolatile RAM s, IEEE Spectrum, 7, pp. 30-33 (1989).
• [12] J.F . Scott, C.A. Paz de Araujo, Ferroelectric memories, Science, 246, pp. 1400-1405 (1989).
• [13] J.F . Scott, Ferroelectric memories, Physics World, 2, pp. 46-50 (1995).
• [14] H.M. Duiker, P.D. Bale, J.F . Scott, C.A. Paz de Araujo, B.M. Melnick, J.D. Cuchiaro, L.D. McMillan, Fatigue and switching in ferroelectric memories: Theory and experiment, J.A ppl. Phys., 68, pp. 5783 (1990).
• [15] I.K. Yoo, S.B. Desu, Mechanism of fatigue in ferroelectric thin films, J. Phys. Sta t. Sol. (a), 133, pp. 565-573 (1992).
• [16] S.B. Desu, I.K. Yoo, Electrochemical models of failure in oxide perovskites, Integrated Ferro¬electrics, 3, pp. 365-376 (1993).
• [17] J. Lee, S. Esayan, A. Safari, R. Ramesh, Fatigue and photoresponse of lead zirconate titanate thin film capacitors, Integrat ed Ferroelectrics, 6, pp. 289-300 (1995) and references cited therein.
• [18] W.L. Warren, D. Dimos, B.A. Tuttle, R.D. Nashby, G.E. Pike, Electronic domain pinning in P b(Z r,Ti)O 3 thin films and its role in fatigue, Appl. Phys. Let t., 65, pp. 1018-1020 (1994).
• [19] D. Dimos, W.L. Warren, B.A. Tuttle, Photo-induced storage and imprinting in (Pb,L a)(Zr,Ti) O3 thin films, In: Science and Technology of Electroceramic Thin Films, O. Au- CIELLO, R . Waser [Eds.], Kluwer Acad. Pub., Dordrecht (1995), pp. 291-300 and references quoted therein.
• [20] Ch. K. Kwok, D.P. Vijay, S.B. Desu, N .R . Parikh, E.A. Hill, Conducting oxide electrodes for ferroelectric films, Integrated Ferroelectrics, 3, pp. 121-130 (1993).
• [21] E.G. Fesenko, V.G. Gavrilyatchenko, A.F. Sementchev, Domain structure of multi-axis fer¬roelectric crystals [in Russian], Rostov University Press, Rostov-on-Don, 1990, p. 185.
• [22] S.A. Mansour, D.A. Binford, R.W. Vest, The dependence o f ferroelectric and fatigue behaviours of P ZT films on annealing conditions, Integrated Ferroelectrics, 1, pp. 43-56 (1992).
• [23] C. Brennan, Model of ferroelectric fatigue due to defect/domain interactions, Ferroelectrics, 150, pp. 199-208 (1993).
• [24] C. Brennan, R.D. Parella, D.E. Larsen, Temperature dependent fatigue rates in thin-film ferroelectric capacitors, Ferroelectrics, 151, pp. 33-38 (1994).
• [25] C. Brennan, Landau theory of thin ferroelectric films, Integrated Ferroelectrics, 8, pp. 335-346 (1995).
• [26] J.M. Bell, P.C . Knight, Ferroelectric electrode interactions in BaTiO3 and PZ T thin films, Integrated Ferroelectrics, 4, pp. 325-332 (1994).
• [27] S. Matsubara, S. Miyazaki, T. Sakuma, Y. Miyasaka, Advances in ferroelectric thin film re¬search at NEC and in Japan, Mat. Res. Soc. Symp. Proc., 243, pp. 281-290 (1992).
• [28] T. Nakamura, Y. Nakao, A. Kamisawa, H. Takasu, Preparation of Pb(Zr,Ti)O3 thin films on Ir and RO2 electrodes, Jpn . J. Appl. Phys., 33, pp. 5207-5210 (1994).
• [29] T. Nakamura, Y. Nakao, A. Kamisawa, H. Takasu, Electrical properties of Pb(Zr,Ti)O3 thin film capacitors on Pt and Ir electrodes, Jpn. J. Appl. Phys., 34, pp. 5184-5187 (1995).
• [30] Y. Nakao, T. Nakamura, A. Kamisawa, H. Takasu, N. Soyama, T. Atsuki, K. Ogi, Study on Pb-based ferroelectric thin films prepared by sol-gel method for memory application, Jpn . J. Appl. Phys., 33, pp. 5265-5267 (1994).
• [31] T. Nakamura, Y. Nakao, A. Kamisawa, H. Takasu, Preparation o/Pb (Zr, Ti) O3 thin films on electrodes including I1O2, Appl. Phys. Lett., 65, 12. pp. 1522-1524 (1994).
• [32] V.M. Fridkin, Ferroelectric Semiconductiors, Consultants Bureau, New York 1980.
• [33] A.F. Semenchev, V.G. Gavrilyachenko, E.G. Fesenko, Influence of illumination on the process of 180° polarization switching in PbTiO3 single crystals, Phys. Solid State , 35, 2, pp. 189-192 (1993).
• [34] Z. Surowiak, D. Czekaj, A.M. Margolin, E.G. Sviridov, V.A. Aleshin, V.P. Dudkevich, The structure and the piezoelectric properties of thin Pb (Zro.53Tio.45Wo.oiCdo.oi) 03 solid films, 214, pp. 78-83 (1992).
• [35] Z. Surowiak, D. Czekaj, V.P. Dudkevich, A.A. Bakirov, I.M. Sem, E.V. Sviridov, Peculiarities of the switching process in polycrystalline thin ferroelectric films of PZT-type, Thin Solid Films, 245, pp. 157-163 (1994); Osobliwości procesu przepolaryzowania w polikrystalicznych cieńkich warstwach ferroelektrycznych typu PZT, Kwartalnik Elektroniki i Telekomunikacji, 40, 1, pp. 59-74 (1994).
• [36] Z. Surowiak, D. Czekaj, J.S. Nikitin, V.P. Dudkevich, Badanie elektrycznych parametrów epitaksjalnych warstw ferroelektrycznych w układzie elektrod planarnych, Elektronika, 9, pp. 3-6 (1992).
• [37] V.A. Aleshin, E.V. Sviridov, A.A. Bakirov, A.M. Margolin, I.A. Zakharchenko, I.M. Sem, V.P. Dudkevich, The transition layer in polycrystalline PZT films, Ferroelectrics, 128, pp. 7-12 (1992).
• [38] P.K. Larsen, G.J.M. Dormans, D.J. Taylor, P.J. van Veldhoven, Ferroelectric properties and fatigu e of PbZro.51Tio.49O3 thin films of varying thickness: Blocking layer model, J. Appl. Phys., 76, 4, pp. 2405-2413 (1994).
• [39] R.D. Nasby, J.R . Schwank, M.S. Rodgards, S.L. Miller, Aspects of fatigue and rapid depolarization in thin film PZT capacitors, Integrated Ferroelectrics, 2, pp. 91-104 (1992).
• [40] C.A. Paz de Araujo, L.D. McMillan, B.M. Melnick, J.D. Cuchiaro, J.F . Scott, Ferroelectric memories, Integrated Ferroelectrics, 104, pp. 241-256 (1990).
• [41] R. Ramesh, W.R. Chan, B. Wilkens, T. Sands, J.M. Tarascon, V.G. Keramidas, Fatigue and aging in ferroelectric PbZro.2Tio.8O3/YBa2Cu3O7 heterostructures, Integrated Ferroelectrics, 1, pp. 1-15 (1992).
• [42] V.M. Fridkin, Photoferroelectrics, Springer, New York 1979.