Electro-acoustic tranducers on the basis of thin PZT films

• Autorzy: Surowiak Z. , Czekaj D. , Bakirov A. A. , Dudkievich V. P.
• Języki publikacji: EN

Abstrakty

EN

In the present work PZT-type thin films have been obtained by RF sputtering and electroacoustic transducers characterized by high sensitivity (?), wide range of measured relative deformations (gamma) and high working frequencies (eta) were built. Polycrystalline ferroelectric thin films with the perovskite type structure and chemical composition Pb(Zr0.53Ti0.45W0.01Cd0.01)O3 have been fabricated by RF sputtering. The films exhibited slightly lower values of dielectric constant, residual polarization and piezoelectric coefficient d33=80x 10-12C/N, as compared with the ceramics of the same chemical composition. The thin films keep such a value of d33 up to the Curie point. On the basis of the PZT-type thin films the isotropic and anisotropic piezoelectric sensors were built and investigated. The electrical signal of the isotropic sensors is proportional to the sum of the main components of the relative deformation tensor whereas the signal of the anisotropic sensors depends on the angle ? between the sensor axis and the main axis of the deformation tensor of the sample under investigation. The sensors are characterized by high stability of the generated signal.

• Wydawca: Instytut Podstawowych Problemów Techniki PAN ; Komitet Akustyki PAN ; Polskie Towarzystwo Akustyczne
• Czasopismo: Archives of Acoustics
• Rocznik: 1999
• Tom: Vol. 24, no. 3
• Strony: 379--390
• Opis fizyczny: Bibliogr. 28 poz., rys., tab., wykr.

Twórcy

autor

Surowiak Z.

autor

Czekaj D.

autor

Bakirov A. A.

autor

Dudkievich V. P.

• University of Silesia, Faculty of Engineering, Department of Materials Science, 41--200 Sosnowiec, 2, Śnieżna St., Poland,

Bibliografia

• [1] K. Okamoto, Y. Nasu and Y. Hamakawa, Low-treshold-voltage thin-film electroluminescent devices, IEEE Trans. Elec. Dev., ED-28, 6, 698-702 (1981).
• [2] R. Khamankar, J. Kim, B. Jiang, C. Sudhama, P. Maniar, R. Moazzami, R. Jones and J. Lee, Impact of post processing damages on performance of high dielectric constant PLZ T thin film capacitors for ULSI DR AM applications, International Electron Devices Meeting, San Francisco, CA, December 11-14, 1994, IEDM Technical Digest, 337-340 (1994).
• [3] R. Waser, Recent trends in electroceramic thin films. Capacitors, pyroelectric sensors and piezoelectric devices, [in:] Electroceramics V International Conference on Electronic Ceramics and Applications, J.L. Baptista, J.A . Labrincha, P.M . Vilarinho [Eds.], University of Aveiro, Portugal 1996. 293-297.
• [4] Z. Surowiak, D. Czekaj, A.A. Bakirov and V.P. Dudkevich, Dynamical deformation sensors based on thin ferroelectric PZT films, Thin Solid Films, 256, 226-233 (1995).
• [5] D. Czekaj, Z. Surowiak, A.A. Bakirov and V.P. Dudkevich, Piezoelectric sensors of mechanical strains on the basis of the thin LiNbO3 and BaTiC>3 [in Polish], Akustyka Molekularna i Kwantowa, 15, 43-57 (1994).
• [6] N.F. Foster, The deposition and piezoelectric characteristics of sputtered lithium niobate films, J.A ppl. Phys., 40, 1, 420-423 (1969).
• [7] J. Dudek, Piezoelectric acoustotransducers SA Won the basis of Pb(Zr,Ti)C>3, The 8-th Piezoelectric Conference PIE ZO’94, 5-7 O ctober 1994, Zakopane, Poland, Proceedings, Tele & Radio Research Institu te, 359-364 (1995).
• [8] II. Adachi, T. Mitsuya, O . Yamazaki and K. Wasa, Ferroelectric (Pb,La)(Zr,Ti)O3 epitaxial thin films on sapphire grown by RF-m agnetron sputtering, J .Appl. Phys., 60, 736-741 (1986).
• [9] Z. Surowiak and V.P. Dudkevich, Thin ferroelectric films [in Polish], Wyd. Uniw. ŚL, Katowice 1996, p. 331.
• [10] P. Muralt, PZT thin films for sensors and actuators, [in:] Electroceramics V, International Conference on Electronic Ceramics and Applications, J.L. Baptista, J.A. Labrincha, P.M. Vilarinho [Eds.], University of Aveiro, Portugal 1996, 11-18.
• [11] B. Willeng, M. Kohli, K. Brooks, P. Muralt and N. Setter, Pyroelectric thin film sensor-arrays integrated on silicon, Ferroelectrics, 201, 147-156 (1997).
• [12] J. Kulek, J.L. Chartier, R. LeBihan, L.M. Hafid and B. Hilczer, Pyroelectric response and thermally stimulated current of PZT thin films, Ferroelectric Letters, 22. 83-88 (1997).
• [13] D. Bondurant and F. Gnadinger, Ferroelectrics for nonvolatile RAMs, IEEE Spectrum, 7, 30-33 (1989).
• [14] J.F . Scott and C.A. Paz de Araujo, Ferroelectric memories, Science, 246, 1400-1405 (1989).
• [15] J.F . Scott, Ferroelectric memories, Physics World, 2, 46-50 (1995).
• [16] A.C. Pazde Araujo, L.D. McMillan, B.M. Melnik and J.D. Cuchiaro, Ferroelectric memories, Integrated Ferroelectrics, 104, 241-256 (1990).
• [17] A.I. Kingon and S.K. Streiffer, Recent trends in electroceramic thin films: II. DRAMS, nonvolatile memories, and optical devices, [in:] Electroceramics V, Internation al Conference on Electronic Ceramics and Applications, J.L. Baptista, J.A. Labrincha, P.M. Vilarinho [Eds.], University of Aveiro, Portugal 1996, 299-303.
• [18] T. Nakamura, Y . Nakao, A. Kamisawa and H. Takasu, Ferroelectric memory FE T with I1/I1O2 electrodes, Integrated Ferroelectrics, 9. 179-187 (1995).
• [19] K.R. Udayakumar, J. Chen, A.M. Flynn, S.F. Bart, L.S. Tavrov, D .J. Ehrlich, L.E. Cross and R.A. Brooks, Ferroelectric thin films for piezoelectric micromotors, Ferroelectrics, 160, 347-356 (1994).
• [20] W.Y. Pan, S. Sun and B.A. Tuttle, Electromechanical and dielectric instability induced by electric field cycling in ferroelectric ceramic actuators, Smart Mater. Struct., 1, 286-293 (1992).
• [21] D.L. Polla and L.F. Francis. Ferroelectric thin films in microelectromechanical systems applications, MRS Bulletin, 21, 7, 59-65 (1996).
• [22] Y. Xu, Ferroelectric materials and their applications, North -Holland, New York 1991, pp. 206-215.
• [23] R. Bruchhaus, H. Huber, D. Pitzer and W. Wersing, Deposition of ferroelectric P ZT thin films by planar multitarget sputtering, Ferroelectrics , 127, 137-142 (1992).
• [24] O. Auciello, A.I. Kingon and S.B. Krupanidhi, Sputter synthesis of ferroelectric film s and hetero structures, MRS Bulletin , 21, 6, 25-30 (1996).
• [25] Z. Surowiak, D. Czeka j, A.A. Bakirov and V.P. Dudkevich, Chemical composition and structure of thin PZ T- type ferroelectric films [in Polish], Archiwum nauki o materiałach, 16, 1, 75-104 (1995).
• [26] Z. Surowiak, D. Czeka j, A.M . Margolin, E.V. Sviridov, V.A. Aleshin and V.P. Dudkevich, The structure and the piezoelectric properties of thin Pb(Zro.53Tio.45Wo.oiCdo.oi)C>3 film s, Thin Solid Film s, 214, 78-83 (1992).
• [27] Z. Surowiak, D. Czeka j, A.A. Bakirov, E.V. Sviridov and V.P. Dudkevich, The structure and dielectric properties of thin PZ T- type fer roelectric films with a diffuse phase transition , Integrated Fer roelectrics , 8, 267-282 (1995).
• [28] B. Jaffe , W.R. Cook and H. Jaffe , Piezoelectric ceramics, Academic Pre ss, London 1971, 137-183.