Interpretation of the piezoelectric photothermal spectra of p-type silicon samples

• Autorzy: Maliński M. , Memon M. , Ikari T.
• Języki publikacji: EN

Abstrakty

EN

This paper presents both experimental and theoretical amplitude and phase piezoelectric photothermal spectra (PPTS) of p-type silicon samples. two dominant peaks at 1.07 eV and 1.18 eV were observed in PPT spectra at room temperature. The relative intensities of these peaks change by a surface treatment. Numerical analysis is performed by supposing that an inactive layer exists at the sample surface. The characteristic structure observed in the piezoelectric amplitude spectra of p-Si samples is well explained by the model proposed for multilayer structure. We found that the proposed inactive layer model is quite helpful in investigating the surface properties of a semiconductor material.

• Wydawca: Instytut Podstawowych Problemów Techniki PAN ; Komitet Akustyki PAN ; Polskie Towarzystwo Akustyczne
• Czasopismo: Archives of Acoustics
• Rocznik: 2003
• Tom: Vol. 28, no. 2
• Strony: 139--148
• Opis fizyczny: Bibliogr. 13 poz., wykr.

Twórcy

autor

Maliński M.

• Faculty of Electronics, Technical University of Koszalin, 17 Partyzantów St., 75-411 Koszalin, Poland

autor

Memon M.

• Department of Electrical and Electronic Engineering, 1-1 Gakuen Kibanadai-nishi 889-2192 Miyazaki, Japan

autor

Ikari T.

• Department of Electrical and Electronic Engineering, 1-1 Gakuen Kibanadai-nishi 889-2192 Miyazaki, Japan

Bibliografia

• [1] W. JACKSON, N. M. AMER, Piezoelectric photoacoustic detection: Theory and experiment, J. Appl. Phys., 51 (6), 3343-3353 (1980).
• [2] J. V. BLONSKIJ, V. A. TKHORYK, M. L. SHENDELEVA, Thermal diffusivity of solids determination by piezoelectric technique, J. Appl. Phys., 79 (7), 3512-3516 (1996).
• [3] T. IKARI, H. YOKOYAMA, S. SHIGETOMI, K. FUTUGAMI, Near band edge photoacoustic spectra of p-Si single crystals, Jpn. J. Appl. Phys., 29 (5), 887-890 (1990).
• [4] T. IKARI, K. MAEDA, K. FUTUGAMI, Photoacoustic signals from ion implanted and epitaxially grown layers on silicon substrate, Jpn. J. Appl. Phys., 33, 2, (3A), L35I-L353 (1994).
• [5] K. HIHASHI, T. IKARI, H. YOKOYAMA, K. FUTAGAMI, Effect on thermal donor formation on the photoacoustic spectra of p-Si single crystals, Jpn. J. Appl. Phys., 32, 1, (5B), 2570-2572 (1993).
• [6] H. KUWAHATA, N. MUTO, F. UEHARA, Carrier concentration dependence of photoacoustic spectra of silicon by a piezoelectric transducer method, Jpn. J. Appl. Phys., 39, 3169-3171 (2000).
• [7] H. KUWAHATA, N. MUTO, F. UEHARA, Carrier concentration dependence of photoacoustic spectra of n-type silicon by microphone and piezoelectric transducer method, Anal. Sciences 17, 31-34 (2001).
• [8] A. MEMON, A. FUKUYAMA, S. SATO, T. IKARI, Investigation of non-radiative transition processes in p and n type solicon single crystals by piezoelectric photoacoustic spectroscopy, Proc. 12th IC PPP Toronto (2002), 133, 2002.
• [9] M. MALIŃSKI, Temperature distribution formulae-applications in photoacoustics, Archives of Acoustics 27 (3), 217-228 (2002).
• [10] M. MALIŃSKI, Multilayer models in the analysis of the piezoelectric photoacoustic spectra, Mol & Quant. Acoustics 23, 101-112 (2002).
• [11] M. MALIŃSKI, J. ZAKRZEWSKI, Multilayer models in the piezo-PAS analysis of AII-BVI compounds, Rev. of Sci. Instr. 74 (1), 102-104 (2003) [in press].
• [12] J. M. SERRA, R. GAMBOA, A. M. VALLERA, Optical absorption coefficient of policrystalline silicon with very high oxygen content. Mat. Science & Eng. B-Solid State Mat. For Adv.Techn., 36 (1-3),73-76 (1996).
• [13] J. E. POKROWSKI, Radiant recombination in semiconductors, PWN 1975.