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Numerical analysis of piezoelectric photoacoustic spectra

Autorzy
Identyfikatory
Warianty tytułu
Języki publikacji
EN
Abstrakty
EN
This paper is an introduction to the analysis of the piezoelectric photoacoustic spectra of single-layer seminductor samples. The analysis comprises, among other things, the temperature distribution formula necessary for the computations of the piezoelectric amplitude and phase spectra. It presents also the procedures of determination of the piezoelectric spectra of semiconductor materials from the optical absorption coefficient ones and the influence of many experimental parameters on the piezoelectric spectra for semiconductors exhibiting either direct or indirect electron type transitions. The origin of the characteristic structure of the piezoelectric spectra is analyzed and discussed.
Słowa kluczowe
Rocznik
Strony
43--58
Opis fizyczny
Bibliogr. 24 poz., rys., wykr.
Twórcy
autor
  • Faculty of Electronics, Technical University of Koszalin, Partyzantów 17, 75-411 Koszalin, Poland, mmalin@tu.koszalin.pl
Bibliografia
  • [1] W. JACKSON, N. M. AMER, Piezoelectric photoacoustic detection: theory and experiment, J. Appl. Phys., 51 (6), 3343-3353, (1980).
  • [2] J. V. BLONSKIJ, V. A. TKHORYK, M. L. SHENDELEVA, Thermal diffusivity of solids determination by piezoelectric technique, J. Appl. Phys., 79 (7), 3512-3516, (1996).
  • [3] T. IKARI, K. MIYAZAKI, A. FUKUYAMA, H. YOKOYAMA, K. MAEDA, K. FUTUGAMI, Piezoelectric detection of the photoacoustic signals of n-type GaAs single crystals, J. Appl. Phys., 71 (5), 2408-2413, (1991).
  • [4] S. SHIGETOMI, T. IKARI, Y. YOGA, S. SHIGETOMI, Annealing behavior of photoacoustic spectra of undoped InSe, Phys. Stat. Sol. (a), 90, K61-K64, (1985).
  • [5] T. IKARI, H. YOKOYAMA, S. SHIGETOMI, K. FUTUGAMI, Near band edge photoacoustic spectra of p-Si single crystals, Jpn. J. Appl. Phys., 29 (5), 887-890, (1990).
  • [6] T. IKARI, K. MAEDA, K. FUTUGAMI, Photoacoustic signals from ion implanted and epitaxially grown layers on silicon substrate, Jpn. J. Appl. Phys, 33, 2, (3A), L351-L353, (1994).
  • [7] K. HIHASHI, T. IKARI, H. YOKOYAMA, K. FUTAGAMI, Effect on thermal donor formation on the photoacoustic spectra of p-Si single crystals, Jpn. J. Appl. Phys., 32, 1, (5B), 2570-2572, (1993).
  • [8] H. KUWAHATA, N. MUTO, F. UEHARA, Carrier concentration dependence of photoacoustic spectra of silicon by a piezoelectric transducer method, Jpn. J. Appl. Phys., 39, 3169-3171, (2000).
  • [9] H. KUWAHATA, N. MUTO, F. UEHARA, Carrier concentration dependence of photoacoustic spectra of n-type silicon by microphone and piezoelectric transducer method, Anal. Sciences, 17, 31-34, (2001).
  • [10] F. FIRSZT, S. ŁĘGOWSKI, H. MĘCZYŃSKA, J. SZATKOWSKI, J. ZAKRZEWSKI, Photoacoustic study of Zn1-x Bex Te mixed crystals, AIP Conf. Proc. 463-10th ICPPP, 350-352, (1999).
  • [11] F. FIRSZT, S. ŁĘGOWSKI, H. MĘCZYŃSKA, J. SZATKOWSKI, J. ZAKRZEWSKI, Photoacoustic study of Zn1-x Bex Te mixed crystals, Analytical Sciences 17, 129-132, (2001).
  • [12] W. PASZKOWICZ, F. FIRSZT, S. ŁĘGOWSKI, H. MĘCZYŃSKA, J. ZAKRZEWSKI, M. MARCZAK, Structural, optical and thermal properties of bulk Zn1-x Bex Te crystals, Phys. stat. sol. (b) 229 No. 1, 57-62, (2002).
  • [13] H. D. BREUER, Proc. 1st. Int. Conf. On Photoacoustic Effect in Germany, Vieg & Son, 115-117, (1981).
  • [14] J. ZAKRZEWSKI, PhD Thesis UMK Toruń (2001).
  • [15] M. MALIŃSKI, Temperature distribution formulae-applications in photoacoustics, Archives of Acoustics 27, 3, 217-228, (2002).
  • [16] J. I. PANKOVE, Optical processes in semiconductors, WNT, Warszawa (1974).
  • [17] N. F. MOTT, E. A. DAVIS, Electronic processes in non-crystalline materials, Clarendon, Oxford (1979).
  • [18] A. K. GHOSH, K. K. SOM, S. CHATTERJEE, B. K. CHAUDHURI, Photoacoustic spectroscopic study of energy gap, optical absorption, and thermal diffusivity of polycrystalline ZnSexTe1-x alloys, Phys. Rev. B, 51 (8), 4842-4848, (1995).
  • [19] M. MALIŃSKI, L. BYCHTO, S. ŁĘGOWSKI, J. SZATKOWSKI, J. ZAKRZEWSKI, Photoacoustic studies of Zn1-x Bex Se mixed crystals: two-layer approach, Micro. Journ., 32, 903-910, (2001).
  • [20] M. MALIŃSKI, L. BYCHTO, S. ŁĘGOWSKI, J. SZATKOWSKI, J. ZAKRZEWSKI, Photoacoustic spectroscopy studies of Zn1-x Bex Se mixed crystals, Proc. 6th Therminic Workshop Budapest, 93-96, (2000).
  • [21] M. MALIŃSKI, L. BYCHTO, F. FIRSZT, J. SZATKOWSKI, J. ZAKRZEWSKI, Determination of the optical absorption coefficient of Zn1-xy Bex MgySe mixed crystals from the PAS experiments-improved approach, Anal. Scien., 17, 133-136, (2001).
  • [22] J. E. POKROWSKI [Ed.], Radiant recombination in semiconductors, PWN, 53-63, (1975).
  • [23] J. M. SERRA, R. GAMBOA, A. M. VALLERA, Optical absorption coefficient of polycrystalline silicon with very high oxygen content, Mat. Science. & Eng., B-Solid State Mat. For Adv. Techn, 36 (1-3), 73-76, (1996).
  • [24] M. MALIŃSKI, L. BYCHTO, A. PATRIN, Near band edge photoacoustic spectra of n-Si and p-Si single crystals, Proc. 23rd IMAPS Poland Conf., 81-85, (1999).
Typ dokumentu
Bibliografia
Identyfikator YADDA
bwmeta1.element.baztech-article-BAT3-0004-0013
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