Capacitors for integrated circuits produced by means of a double implantation method

• Autorzy: Żukowski P. , Partyka J. , Węgierek P.
• Języki publikacji: EN

Abstrakty

EN

The paper presents a descrption of a method to produce capacitors in integrated circuits that consists in implanting weakly doped silicon with the same impurity, then subjecting it to annealing (producing the inner plate), and implanting it again with ions of neutral elements to produce the dielectric layer. Results of the testing capacitors produced that way are also presented. Unit capacity of Cu = 4.5 nF/mm^2 at tg[delta] = 0.01 has been obtained. The autors are of the opinion that the interesting problem of discontinuous variations of dielectric losses and capacities considered as functions of temperature, must be viewed as an open problem.

Słowa kluczowe

EN

capacitor; double implantation method; integrated circuit; semiconductor capacitor

PL

kondensator; kondensator półprzewodnikowy; metoda podwójnej implantacji; układ scalony

• Wydawca: Instytut Podstawowych Problemów Techniki PAN
• Czasopismo: Journal of Technical Physics
• Rocznik: 1998
• Tom: Vol. 39, no 1
• Strony: 143--147
• Opis fizyczny: Bibliogr. 6 poz.,

Twórcy

autor

Żukowski P.

autor

Partyka J.

autor

Węgierek P.

• Lublin University of Technology, Faculty of Electrical Engineering, Nadbystrzycka 38A, 20-618 Lublin, Poland