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Growing and clustering the sp2 bonded carbon fraction in the tetrahedral carbon (ta-C) films by ion implantation is confirmed by Raman spectral analysis. The examination of the film transforming evolved on an atomic scale indicates the formation of structures with the higher degree of order. The graphitic basal planes are formed preferably in the perpendicular direction to the film surface. The implantation gives the change in measured values of the contact angle, which can vary from original near 70 degrees for as deposited films to about 60 degrees for implanted films. The implanted tetrahedral carbon films display very similar surface properties at the quite different bulk structure.
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Tom
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74--75
Opis fizyczny
Bibliogr. 4 poz., rys.
Twórcy
autor
- V.N.Bukul Institute for Superhard Materials of the NASU, 2 Avtozavods'ka vul., Kyiv 74, Ukraine
autor
- V.N.Bukul Institute for Superhard Materials of the NASU, 2 Avtozavods'ka vul., Kyiv 74, Ukraine
autor
- V.N.Bukul Institute for Superhard Materials of the NASU, 2 Avtozavods'ka vul., Kyiv 74, Ukraine
autor
- V.N.Bukul Institute for Superhard Materials of the NASU, 2 Avtozavods'ka vul., Kyiv 74, Ukraine
autor
autor
- V.N.Bukul Institute for Superhard Materials of the NASU, 2 Avtozavods'ka vul., Kyiv 74, Ukraine
autor
- Center of Super-Diamond and Advanced Films, City University of Hong Kong, 83 Tat Chee Avenue, Kowloon, Hong Kong SAR, China
autor
- Center of Super-Diamond and Advanced Films, City University of Hong Kong, 83 Tat Chee Avenue, Kowloon, Hong Kong SAR, China
autor
- V.N.Bukul Institute for Superhard Materials of the NASU, 2 Avtozavods'ka vul., Kyiv 74, Ukraine
autor
- Center of Super-Diamond and Advanced Films, City University of Hong Kong, 83 Tat Chee Avenue, Kowloon, Hong Kong SAR, China
Bibliografia
- [1] O. Kutsay, I. Bello, Y. Lifshitz, C.W. Lam, W.Y. Luk, S.T. Lee, X. Meng, V. Kremnican: Nanostructuring of tetrahedral carbon films by carbon ion implantation // Diamond Relat. Mater. 12 (2003) 2051.
- [2] B.K. Tay, D. Sheeja, S.P. Lau, J.X. Guo: Study of surface energy of tetrahedral carbon films modified in various gas plasma // Diamond Relat. Mater. 12 (2003) 2072.
- [3] N.V. Novikov, S.I. Khandozhko, V.M. Perevertailo, L.Yu. Ostrovskaya, A.G. Gontar, O.B. Loginova: The wettability of a-C:H films by solution of different physicochemical composition // Diamond Relat. Mater. 9 (1998) 1263.
- [4] W.Y. Luk, O. Kutsay, I. Bello, Y. Lifshitz, C.W. Lam, S.T. Lee, X. Meng: Transformation of semiconducting tetrahedral carbon films to semimetal nanocomposite materials by ion implantation // Diamond Relat. Mater. 13 (2004) 1427.
Typ dokumentu
Bibliografia
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bwmeta1.element.baztech-article-AGH3-0001-0017