Compositional analysis of silicon oxide/silicon nitride thin films

• Autorzy: Meziani S. , Moussi A. , Mahiou L. , Outemzabet R.

Identyfikatory

DOI

10.1515/msp-2016-0057

• Języki publikacji: EN

Abstrakty

EN

Hydrogen, amorphous silicon nitride (SiN_x:H abbreviated SiN_x) films were grown on multicrystalline silicon (mc-Si) substrate by plasma enhanced chemical vapour deposition (PECVD) in parallel configuration using NH₃/SiH₄ gas mixtures. The mc-Si wafers were taken from the same column of Si cast ingot. After the deposition process, the layers were oxidized (thermal oxidation) in dry oxygen ambient environment at 950 ºC to get oxide/nitride (ON) structure. Secondary ion mass spectroscopy (SIMS), Rutherford backscattering spectroscopy (RBS), Auger electron spectroscopy (AES) and energy dispersive X-ray analysis (EDX) were employed for analyzing quantitatively the chemical composition and stoichiometry in the oxide-nitride stacked films. The effect of annealing temperature on the chemical composition of ON structure has been investigated. Some species, O, N, Si were redistributed in this structure during the thermal oxidation of SiN_x. Indeed, oxygen diffused to the nitride layer into Si₂O₂N during dry oxidation.

Słowa kluczowe

EN

SiNxH; oxidation; PECVD; annealing temperature; elemental analysis

• Wydawca: De Gruyter
• Czasopismo: Materials Science Poland
• Rocznik: 2016
• Tom: Vol. 34, No. 2
• Strony: 315--321
• Opis fizyczny: Bibliogr. 24 poz., rys.

Twórcy

autor

Meziani S.

• CRTSE, Division Développement des Dispositifs de Conversion á Semi-conducteurs. 02 Bd Frantz Fanon, BP 140 Alger 7-Merveilles 16038, Algeria

autor

Moussi A.

• CRTSE, Division Développement des Dispositifs de Conversion á Semi-conducteurs. 02 Bd Frantz Fanon, BP 140 Alger 7-Merveilles 16038, Algeria

autor

Mahiou L.

• CRTSE, Division Développement des Dispositifs de Conversion á Semi-conducteurs. 02 Bd Frantz Fanon, BP 140 Alger 7-Merveilles 16038, Algeria

autor

Outemzabet R.

• Laboratoire des semi-conducteurs et oxydes métalliques, Université des Sciences et de la Technologie Houari Boumediene, BP 32 El Alia, Bab Ezzouar Alger, Algeria

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Uwagi

Opracowanie ze środków MNiSW w ramach umowy 812/P-DUN/2016 na działalność upowszechniającą naukę.