Noise Measurements Of Resistors With The Use Of Dual-Phase Virtual Lock-In Technique

• Autorzy: Stadler A. W. , Kolek A. , Zawiślak Z. , Dziedzic A.

Identyfikatory

DOI

10.1515/mms-2015-0051

• Języki publikacji: EN

Abstrakty

EN

Measurement of low-frequency noise properties of modern electronic components is a very demanding challenge due to the low magnitude of a noise signal and the limit of a dissipated power. In such a case, an ac technique with a lock-in amplifier or the use of a low-noise transformer as the first stage in the signal path are common approaches. A software dual-phase virtual lock-in (VLI) technique has been developed and tested in low-frequency noise studies of electronic components. VLI means that phase-sensitive detection is processed by a software layer rather than by an expensive hardware lock-in amplifier. The VLI method has been tested in exploration of noise in polymer thick-film resistors. Analysis of the obtained noise spectra of voltage fluctuations confirmed that the 1/f noise caused by resistance fluctuations is the dominant one. The calculated value of the parameter describing the noise intensity of a resistive material, C= 1·10⁻²¹m³, is consistent with that obtained with the use of a dc method. On the other hand, it has been observed that the spectra of (excitation independent) resistance noise contain a 1/f component whose intensity depends on the excitation frequency. The phenomenon has been explained by means of noise suppression by impedances of the measurement circuit, giving an excellent agreement with the experimental data.

Słowa kluczowe

EN

1/f noise; polymer thick-film resistor; low-frequency noise measurements; virtual lock-in

• Wydawca: Komitet Metrologii i Aparatury Naukowej PAN
• Czasopismo: Metrology and Measurement Systems
• Rocznik: 2015
• Tom: Vol. 22, nr 4
• Strony: 503--512
• Opis fizyczny: Bibliogr. 29 poz., rys., wykr., wzory

Twórcy

autor

Stadler A. W.

• Rzeszów University of Technology, Department of Electronics Fundamentals, Powstańców Warszawy 12, 35-959 Rzeszów, Poland

autor

Kolek A.

• Rzeszów University of Technology, Department of Electronics Fundamentals, Powstańców Warszawy 12, 35-959 Rzeszów, Poland

autor

Zawiślak Z.

• Rzeszów University of Technology, Department of Electronics Fundamentals, Powstańców Warszawy 12, 35-959 Rzeszów, Poland

autor

Dziedzic A.

• Wrocław University of Technology, Faculty of Microsystem Electronics and Photonics, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland

Bibliografia

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Uwagi

EN

The work has been supported from Grant DEC-2011/01/B/ST7/06564 funded by National Science Centre (Poland) and from statutory activity from Department of Electronics Fundamentals of Rzeszow University of Technology and Wroclaw University of Technology. Studies have been performed with the use of an equipment purchased in the project No POPW.01.03.00-18-012/09 from the Structural Funds, The Development of Eastern Poland Operational Programme co-financed by the European Union, the European Regional Development Fund.