Comparison of electrical properties of CuO/n-Si contacts with Cu/n-Si

• Autorzy: Özmenteş Reşit , Temirci Cabir

Identyfikatory

DOI

10.2478/msp-2020-0051

• Języki publikacji: EN

Abstrakty

EN

In this study, CuO/n-Si/Al heterojunction contacts were fabricated by thermal evaporation technique. Electrical characteristics of the samples were investigated with the current-voltage (I-V), capacitance-voltage/frequency (C-V/f), and conductance-voltage (G/V) measurements at room temperature. Also, Cu/n-Si/Al Schottky contact was produced as a reference sample to investigate the electrical properties of the samples. The values of ideality factor (n), barrier height (φ_b) and series resistance (Rs) of the samples were calculated from the forward bias current-voltage (I-V) and reverse bias capacitance-voltage (C-V) characteristics. Also, for checking the consistency of the results, Cheung and Norde functions were used. The experimental result values of CuO/n-Si contact were compared with the values of the reference Cu/n-Si Schottky diode. It was observed that the values of the ideality factor and barrier height of the CuO/n-Si heterojunction were higher than those of the Cu/n-Si Schottky contact, while the series resistance was lower. Also, it has been observed that the value of capacitance decreased with increasing frequency and after a certain value of frequency it was almost constant. The ideality factor of CuO/n-Si/Al heterostructure is about 2.40 and so, it is not close to the ideal behavior.

Słowa kluczowe

EN

CuO; heterojunction; thermal evaporation; electrical properties

• Wydawca: De Gruyter
• Czasopismo: Materials Science Poland
• Rocznik: 2020
• Tom: Vol. 38, No. 3
• Strony: 475--483
• Opis fizyczny: Bibliogr. 30 poz., rys., tab.

Twórcy

autor

Özmenteş Reşit

• Institute of Science, Van YuzuncuYil University, Van, Turkey

autor

Temirci Cabir

• Department of Physics, Faculty of Sciences, Van YuzuncuYil University, Van, Turkey

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