Preparation and characterization of (Co0:3Zn0:7)(Ti1–xSnx)Nb2O8 microwave dielectric ceramics

• Autorzy: Tang B. , Zhang X. , Fang Z. , Liu Q. , Zhang S.

Identyfikatory

DOI

10.1515/msp-2017-0042

• Języki publikacji: EN

Abstrakty

EN

Zn_0.7Co_0.3 (Ti_1-xSn_x)Nb₂O₈ (x = 0.1, 0.15, 0.2, 0.25, 0.3, 0.35) microwave ceramics were prepared by traditional solidstate reaction method. The influences of Sn substituted for Ti on the phase constitution, crystal structure and microwave dielectric properties of Zn_0.7Co_0.3 (Ti_1-xSn_x)Nb₂O₈ ceramics were discussed. The XRD patterns revealed the main phase of ZnTiNb₂O₈ and little content of Zn_0.17Ti_0.5Nb_0.33O₂ secondary phase. With further substitution of Sn, the lattice constant, volume and apparent density of the ceramics increased, the ceramic structure reached a maximal compactness at x = 0.2 which was shown on SEM. Tremendous improvement of Q × f and a declining trend of Ɛ_r and τ_f were obtained with increasing x value. Appropriate substitution value (x = 0.10) would ensure excellent microwave dielectric properties (Ɛ_r = 34.1, Q × f = 40562 GHz, τ_f =-5 ppm/°C) of the ceramics sintered at 1080 °C.

Słowa kluczowe

EN

microwave dielectric ceramics; (Co0.3Zn0.7)(Ti1-xSnx)Nb2O8; ixiolite structure

• Wydawca: De Gruyter
• Czasopismo: Materials Science Poland
• Rocznik: 2017
• Tom: Vol. 35, No. 2
• Strony: 405--411
• Opis fizyczny: Bibliogr. 22 poz., rys.

Twórcy

autor

Tang B.

• State Key Laboratory of Electronic Thin Films and Integrated Devices, University of electronic Science and Technology of China, Chengdu 610054, China

autor

Zhang X.

• State Key Laboratory of Electronic Thin Films and Integrated Devices, University of electronic Science and Technology of China, Chengdu 610054, China

autor

Fang Z.

• State Key Laboratory of Electronic Thin Films and Integrated Devices, University of electronic Science and Technology of China, Chengdu 610054, China

autor

Liu Q.

• State Key Laboratory of Electronic Thin Films and Integrated Devices, University of electronic Science and Technology of China, Chengdu 610054, China

autor

Zhang S.

• State Key Laboratory of Electronic Thin Films and Integrated Devices, University of electronic Science and Technology of China, Chengdu 610054, China

Bibliografia

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Uwagi

Opracowanie ze środków MNiSW w ramach umowy 812/P-DUN/2016 na działalność upowszechniającą naukę (zadania 2017).