A new design of scanning IR detectors

• Autorzy: Dvoretsky Sergey A. , Kovchavtsev Anatoly P. , Lee Irlam I. , Polovinkin Vladimir G. , Sidorov Georgiy Yu. , Yakushev Maxim V.

Identyfikatory

DOI

10.24425/opelre.2020.132505

• Języki publikacji: EN

Abstrakty

EN

Photoelectrical characteristics of scanning IR detectors with implemented time delay and integration mode are analyzed. A new “shifted cellular” layout of photosensitive elements in the FPA structure is proposed. Advantages of the new FPA configuration in terms of threshold sensitivity for small-size/point objects are demonstrated. The analysis is based on the Monte Carlo simulation of the diffusion process of photogenerated minority charge carriers in the photosensitive layer photodiode arrays. The analysis is performed taking into account the main photoelectric parameters of FPA elements: photosensitive layer thickness, diffusion length of charge carriers, optical absorption length, their design parameters: geometric sizes of FPA elements, diameters of p-n junctions, and design parameters of the optical system: optical-spot diameter.

Słowa kluczowe

EN

scanning IR detector; photosensitive element; Monte Carlo method; local quantum efficiency; point radiation source

• Wydawca: Stowarzyszenie Elektryków Polskich ; Polska Akademia Nauk ; Wojskowa Akademia Techniczna im. Jarosława Dąbrowskiego
• Czasopismo: Opto-Electronics Review
• Rocznik: 2020
• Tom: Vol. 28, No. 2
• Strony: 93--98
• Opis fizyczny: Bibliogr. 19 poz., rys., tab.

Twórcy

autor

Dvoretsky Sergey A.

• Rzhanov Institute of Semiconductor Physics, 13 Acad. Lavrentiev Ave., 630090 Novosibirsk, Russian Federation

• https://orcid.org/0000-0002-8077-0835

autor

Kovchavtsev Anatoly P.

• Rzhanov Institute of Semiconductor Physics, 13 Acad. Lavrentiev Ave., 630090 Novosibirsk, Russian Federation

• https://orcid.org/0000-0003-2670-6979

autor

Lee Irlam I.

• Rzhanov Institute of Semiconductor Physics, 13 Acad. Lavrentiev Ave., 630090 Novosibirsk, Russian Federation

• https://orcid.org/0000-0003-4739-7095

autor

Polovinkin Vladimir G.

• Rzhanov Institute of Semiconductor Physics, 13 Acad. Lavrentiev Ave., 630090 Novosibirsk, Russian Federation
• Novosibirsk State Technical University, 20 Marx Ave., 630073 Novosibirsk, Russian Federation

• https://orcid.org/0000-0002-6851-2980

autor

Sidorov Georgiy Yu.

• Rzhanov Institute of Semiconductor Physics, 13 Acad. Lavrentiev Ave., 630090 Novosibirsk, Russian Federation

• https://orcid.org/0000-0002-3449-6548

autor

Yakushev Maxim V.

• Rzhanov Institute of Semiconductor Physics, 13 Acad. Lavrentiev Ave., 630090 Novosibirsk, Russian Federation

• https://orcid.org/0000-0002-9910-2028

Bibliografia

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Uwagi

Opracowanie rekordu ze środków MNiSW, umowa Nr 461252 w ramach programu "Społeczna odpowiedzialność nauki" - moduł: Popularyzacja nauki i promocja sportu (2020).