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Development of Graphene Based Flow Sensor

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Warianty tytułu
Języki publikacji
EN
Abstrakty
EN
This paper shows the research on a flow sensor based on graphene. Presented Results show the linear relation between voltage induced on graphene layer and flow velocity. The measurement shows that signal level is relatively low, and it is highly correlated with the time of the sample being submerged in water. A significant temperature dependency has been shown which indicates on necessity to develop a compensation system for the sensor. On the other hand, induced voltage is related to ion concentration of the liquid, so the sensor must be recalibrated for every working environment. The most important thing that turned out during research is that although the voltage signal itself is highly inconsistent, the difference between its value in steady state and for flowing liquid is always visible and correlated to the flow value – this property can be used in further deployment. Huge advantage of the sensor is also its scalability which opens so far unknown possibilities of applications.
Słowa kluczowe
EN
graphene   flow   sensor   voltage  
Twórcy
autor
  • Industrial Research Institute for Automation and Measurements PIAP, Warsaw, Poland
  • Industrial Research Institute for Automation and Measurements PIAP, Warsaw, Poland
autor
  • Industrial Research Institute for Automation and Measurements PIAP, Warsaw, Poland
autor
  • Industrial Research Institute for Automation and Measurements PIAP, Warsaw, Poland
Bibliografia
  • [1] Wallace P. R., “The band theory of graphite”, Physical Review, vol. 71, no. 9, 1947, 624. DOI: dx.doi.org/10.1103/PhysRev.71.622.
  • [2] Murali R., Yang Y., Brenner K., Beck T., Meindl J.D., “Breakdown Current Density of Graphene Nano Ribbons”, Applied Physics Letters, 94, 2009, 243114.
  • [3] Ghosh S., Calizo I., Teweldebrhan D., Pokatilov E. P., Nika D. L., Balandin A. A.,
  • [4] Bao W., Miao F., Lau C. N., “Extremely high thermal conductivity of graphene: Prospects for thermal management applications in nanoelectronic circuits”, Apllied Physics Letters, vol. 92, no. 15, 2008, 151911. DOI: dx.doi.org/10.1063/1.2907977.
  • [5] Taisuke O., Bostwick A., Seyller T., Horn K., Rotenberg E., “Controlling the electronic structure of bilayer grapheme”, Science, 301, 2006, 952.
  • [6] Strupinski W., “Graphene epitaxy by chemical vapor deposition on SiC”, Nano Letters, vol. 11, no. 4, 2011, 1786. DOI: dx.doi.org/10.1021/nl200390e.
Typ dokumentu
Bibliografia
Identyfikator YADDA
bwmeta1.element.baztech-ab7181a9-f4f7-42bd-950b-d74f07497bba
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