Electronic parameters of MIS Schottky diodes with DNA biopolymer interlayer

• Autorzy: Gullu O. , Turut A.

Identyfikatory

DOI

10.1515/msp-2015-0089

• Języki publikacji: EN

Abstrakty

EN

In this work, we prepared an ideal Cu/DNA/n-InP biopolymer-inorganic Schottky sandwich device formed by coating a n-InP semiconductor wafer with a biopolymer DNA. The Cu/DNA/n-InP contact showed a good rectifying behavior. The ideality factor value of 1.08 and the barrier height (Φ_b) value of 0.70 eV for the Cu/DNA/n-InP device were determined from the forward bias I-V characteristics. It was seen that the Φ_b value of 0.70 eV obtained for the Cu/DNA/n-InP contact was significantly larger than the value of 0.48 eV of conventional Cu/n-InP Schottky diodes. Modification of the interfacial potential barrier of Cu/n-InP diode was achieved using a thin interlayer of DNA biopolymer. This was attributed to the fact that DNA biopolymer interlayer increased the effective barrier height by influencing the space charge region of InP.

Słowa kluczowe

EN

Schottky diodes; interfaces; semiconductors; electrical properties

• Wydawca: De Gruyter
• Czasopismo: Materials Science Poland
• Rocznik: 2015
• Tom: Vol. 33, No. 3
• Strony: 593--600
• Opis fizyczny: Bibliogr. 57 poz., rys.

Twórcy

autor

Gullu O.

• Department of Physics, Faculty of Sciences and Arts, Batman University, Batman, Turkey

autor

Turut A.

• Department of Physics Eng., Faculty of Sciences, Istanbul Medeniyet University, Istanbul, Turkey

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