Ageing of cadmium telluride radiation detectors and its diagnostics with low frequency noise

• Autorzy: Andreev A. , Sik O. , Grmela L. , Sikula J.
• Języki publikacji: EN

Abstrakty

EN

Samples of CdTe single crystals which are used as radiation detectors were periodically measured during a long time interval with different values of an applied voltage. The samples were also periodically exposed during long time periods to high temperatures of 390 K and to rapid changes of temperature from 300 K to 390 K. After 1.5 years of measurements we observed ageing of the samples which resulted in deterioration of their transport characteristics. The resistance of the samples increased significantly and current-voltage characteristics were unstable in time. Noise spectroscopy showed that low frequency noise can be used for detection of CdTe sample ageing as its spectral density increases significantly comparing to the 1/f noise of a high quality sample.

Słowa kluczowe

EN

noise spectroscopy; CdTe radiation detectors; ageing process

• Wydawca: Komitet Metrologii i Aparatury Naukowej PAN
• Czasopismo: Metrology and Measurement Systems
• Rocznik: 2013
• Tom: Vol. 20, nr 3
• Strony: 385--394
• Opis fizyczny: Bibliogr. 20 poz., rys., wykr.

Twórcy

autor

Andreev A.

• Brno University of Technology, Technicka 8, 616 00 Brno, Czech Republic

autor

Sik O.

• Brno University of Technology, Technicka 8, 616 00 Brno, Czech Republic

autor

Grmela L.

• Brno University of Technology, Technicka 8, 616 00 Brno, Czech Republic

autor

Sikula J.

• Brno University of Technology, Technicka 8, 616 00 Brno, Czech Republic

Bibliografia

• [1] Szeles C. (2003). CdZnTe and CdTe materials for X-ray and gamma ray detector applications. Phys. Stat. Sol. (b), 241(3), 783-790.
• [2] Castaldini A., Cavallini A., Fraboni B., Fernandez P., Piqueras J. (1998). Deep energy levels in CdTe and CdZnTe. J. Appl. Phys., 83, 2121-2126.
• [3] Takahashi T., Watanabe S. (2001) Recent Progress in CdTe and CdZnTe. Detectors Nuclear Science, 48, 950-959.
• [4] Jones B. K. (2002). Electrical noise as a reliability indicator in electronic devices and components. In IEEE Proceeding of Circuit’s Devices System, 149(1), 13-22.
• [5] Sikula J., Stourac L. (2002). Noise spectroscopy of semiconductor materials and devices. In 23rd International Conference on Microelectronics, 2, 767-772
• [6] Crook R., and Jones B.K. (1997). Noise and DC characteristics of power silicon diodes. Microelectron. Reliub., 37, 1635-1638.
• [7] Koktavy B., Sikula J., Hruska P., Koktavy P. (1995). Burst noise in PN junction power diodes. IN Proceedings of International NORDITO Workshop, Brno, Czech Republic, 178-183.
• [8] Sikula J., Koktaw B., Vasina P., Chobola Z., Schauer P., Korenska M. (1994). Noise diagnostics of PN junction power devices. In Proceedings of Fifth European Symposium on Reliability of electron devices, failure physics and analysis (ESREF 5), Glasgow, UK, 217-220.
• [9] Jones B.K. (1999). The scale invariance of l/f noise. In Proceedings of Unsolved problems of noise and fluctuations (UPON99), Adelaide, Australia, 115-123.
• [10] Redus R., Pantazis A., Huber A., Cross B. (2008). Characterization of CdTe Detectors for Quantitative X-ray Spectroscopy, IEEE Trans. Nucl. Sci., 56(4), 2524-2532.
• [11] Jevtic M. M. (1995). Noise as a diagnostic and prediction tool in reliability physics. Microelectronics and reliability, 35, 455-477.
• [12] Stegemann D. H, Debarberis L., Acosta B., Beers M., Keinhorst G. (1999). Progress of the Ageing Material Evaluation and Studies by Non-Destructive Techniques AMES-NDT Concerted Action. In The ninth international symposium on nondestructive characterization of materials. Sydney,Australia, 263-268.
• [13] Franc J., Hoschl P., Belas E., Grill R., Hlidek P., Moravec P., Bok J. (1999). CdTe and CdZnTe crystals for room temperature gamma-ray detectors. Nucl. Instr. Meth. A, 434, 146-151.
• [14] Andreev A., Grmela L., Moravec P., Bosman G., Sikula J. (2010). Investigation of excess 1/f noise in CdTe single crystals. Semicond. Sci. Technol. 25(5), 1-7.
• [15] Grmela L., Majzner J., Pavelka J., Sikula J. (2002). Automatic noise spectral density measuring set-up. In Proc. of. Electronic Devices and Systems Conference, Brno, Czech Republic, 114-120.
• [16] Mohammadi S., Pavilidis D. (2000). A Nonfundamental Theory of Low-Frequency Noise in Semiconductor Devices. IEEE Transactions on Electron Devices, 47(11), 2009-2017.
• [17] Smulko J., Azens A., Marsal R., Kish L., Green S., Granqvist C. (2008). Application of 1/f current noise for quality and age monitoring of electrochromic devices. Solar Energy Mat. and Solar Cells, 92(8), 914-918.
• [18] Chvatal M. (2008). Noise Reliability Indicators In SMT Chip Resistors. In Proceedings Of The 14th Student EEICT 2008 Conference. Brno, Czech Republic, 297-301.
• [19] Smulko J., Azens A., Kish L.B., and Granqvist, C.G. (2008). Low-Frequency Current Noise in Electrochromic Devices, Smart Mater. Struct., 17(2), 1-4.
• [20] Smulko J. (2006). Methods of electrochemical noise analysis for investigation of corrosion processes. Fluctuation and Noise Letters, 6(02), R1-R9, DOI: 10.1142/S0219477506003252.

Uwagi

EN

This research has been supported by the Grant Agency of Czech Republic No P102/10/P589 “Noise spectroscopy of CdTe X-ray and gamma-ray detectors” and by the Czech Ministry of Education in the frame of CZ.1.05/2.1.00/03.0072: Sensor, Information and Communication Systems.