The desctiption of turn-off process and evaluation of switching power losses in the ultra fast power MOSFET

• Autorzy: Grzejszczak P. , Barlik R.

Identyfikatory

DOI

10.5277/PED160104

• Języki publikacji: EN

Abstrakty

EN

The article presents an analytical description of the turn-off process of the power MOSFET suitable for use in high-frequency converters. The purpose of this description is to explain the dynamic phenomena occurring inside the transistor and contributing to the switching power losses. The detailed description uses the results of simulation studies carried out using a very precise model of the CoolMOS transistor manufactured by Infineon (IPW60R070C6). The theoretical analysis has been verified in experimental measurements of power dissipated during turn-off transient of MOSFET operating in a full bridge converter with switching frequency of 100 kHz. To estimate these switching losses an original thermovision method based on the measurement of heat dissipated in the power semiconductor switches has been used. The obtained results confirm the correctness of the conclusions drawn from the theoretical analysis presented in this paper.

Słowa kluczowe

EN

power MOSFET; turn-off transient; parasitic capacitance; switching losses; thermovision measurement

• Wydawca: De Gruyter
• Czasopismo: Power Electronics and Drives
• Rocznik: 2016
• Tom: Vol. 1 (36), No. 1
• Strony: 55--67
• Opis fizyczny: Bibliogr. 10 poz., rys., tab.

Twórcy

autor

Grzejszczak P.

• Rzeszów University of Technology, Department of Power Electronics, Power Engineering and Complex Systems, ul. W. Pola 2, 35-959 Rzeszów

autor

Barlik R.

• Warsaw University of Technology, Institute of Control and Industrial Electronics, ul. Koszykowa 75, 00-662 Warszawa

Bibliografia

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• [2] Li X., Zhang L., Guo S., Lei Y., Huang A.Q., Zhang B.. Understanding switching losses in SiC MOSFET: Toward lossless switching, Wide Bandgap Power Devices and Applications (WiPDA), IEEE 3rd Workshop. Blacksburg, 2015,257-262.
• [3] HUGHES B. et al., Normally-off GaN switching 400V in 1.4ns using an ultra-low resistance and inductance gate drive, Wide Bandgap Power Devices and Applications (WiPDA), IEEE Workshop, Columbus, 2013, 76-79.
• [4] Zhang Z., Wang F., Tolbert L.M., Blalock B.J., Costinett D.J., Active gate driver for fast switching and cross-talk suppression of SiC devices in a phase-leg configuration, Applied Power Electronics Conference and Exposition (APEC), IEEE, Charlotte, 2015, 774—781.
• [5] Aliga B.J., Fundamentals of Power Semiconductor Devices, Springer, New York, USA, 2008.
• [6] INFINEON, Datasheet information on power MOSFET IPW60R070C6. Available: http: //www.infineon.com.
• [7] Grzejszczak P., Nowak M., Barlk R., Analytical description of the switching losses in high voltage MOSFETH-bridge, Electrical Review, 2015, Vol. 90, No. 11, 74—77, (in Polish).
• [8] Chen Z., Boroyevich D., Burgos R., Experimental Parametric Study of the Parasitic Inductance Influence on MOSFET Switching Characteristics, Proc. of the Int. Power Electronics Confer., Singapur2010, 164—169.
• [9] Xiao C., Chen G., Odendaal W.G.H., Overview of power loss measurement techniques in power electronics systems, IEEE Trans, on Industrial Application, 2007, Vol. 43, No. 3, 657-664.
• [10] Grzejszczak P., Methodology for determining power losses in switching devices of dual active bridge converter with taking into account the thermal effects, Ph.D. Thesis, Warsaw University of Technology, Warszawa 2014, (in Polish).