Tytuł artykułu
Wybrane pełne teksty z tego czasopisma
Identyfikatory
Warianty tytułu
Języki publikacji
Abstrakty
In this study, the effect of boron (B) incorporation into zinc oxide (ZnO) has been investigated. The undoped, 2 at.%. and 4 at.% B doped ZnO films were deposited on p-type silicon (Si) substrates by electrodeposition method using chronoamperometry technique. Electrochemical depositions were performed by applying a constant potentiostatic voltage of 1.1 V for 180 min at 90 °C bath temperature. To analyze the surface morphology, field emission scanning electron microscopy (FESEM) was used and the results revealed that while a small amount of boron resulted in smoother surface, a little more incorporation of boron changed the surface morphology to dandelion-like shaped rods on the whole surface. By using X-ray diffraction (XRD) analysis, the crystal structures of the films were detected and the preferred orientation of the ZnO, which exhibited polycrystalline and hexagonal wurtzite structure, changed with B doping. For the estimation of the optical band gap of obtained films, UV-Vis diffuse reflectance spectra (DRS) of the films were taken at room temperature and these data were applied to the Kubelka-Munk function. The optical band gap of ZnO narrowed due to incorporation of B, which was confirmed by red-shift.
Słowa kluczowe
Wydawca
Czasopismo
Rocznik
Tom
Strony
824--829
Opis fizyczny
Bibliogr. 26 poz., rys., tab.
Twórcy
autor
- Department of Physics, Faculty of Science, Anadolu University, 26470 Eskisehir, Turkey
autor
- Department of Physics, Faculty of Science, Anadolu University, 26470 Eskisehir, Turkey
autor
- Department of Physics, Faculty of Science, Anadolu University, 26470 Eskisehir, Turkey
Bibliografia
- [1] PEKSU E., KARAAGAC H., J. Nanomater., 2015 (2015), 16012.
- [2] CAGLAR M., GORGUN K., J. Nanoelectron. Optoelectron., 11 (2016), 769.
- [3] XIONG C., YAO R., Optik, 126 (2015), 1951.
- [4] CAGLAR Y., ARSLAN A., ILICAN S., HUR E., AKSOY S., CAGLAR M., J. Alloy. Compd., 574 (2013), 104.
- [5] RUZGAR S., AKSOY S., J. Mater. Electron. Devices, 1 (2015), 38.
- [6] CAGLAR Y., CAGLAR M., ILICAN S., AKSOY S., YAKUPHANOGLU F., J. Alloy. Compd., 621 (2015), 189.
- [7] YE W., DENG J., WANG X., CUI L., Appl. Surf. Sci., 390 (2016), 831.
- [8] MAZIARZ W., RYDOSZ A., WYSOCKA K., PISARKIEWICZ T., Mater. Sci.-Poland, 32 (2014), 176.
- [9] ATES T., TATAR C., YAKUPHANOGLU F., Sensor. Actuat. A-Phys., 190 (2013) 153.
- [10] KERLI S., ALVER U., TANRIVERDI A., AVAR B., Crystallogr. Rep., 60 (2015), 946.
- [11] YU C.C., HSU Y.T., LEE S.Y., LAN W.H., KUO H.H., SHIH M.C., FENG D.J.Y., HUANG K.F., Jpn. J. Appl. Phys., 52 (2013), 1.
- [12] GANDLA S., GOLLU S. R., SHARMA R., SARANGI V., GUPTA D., Appl. Phys. Lett., 107 (2015), 152102.
- [13] CAGLAR M., ILICAN S., CAGLAR Y., YAKUPHANOGLU F., J. Alloy. Compd., 509 (2011), 3177.
- [14] ILICAN S., YAKUPHANOGLU F., CAGLAR M., CAGLAR Y., J. Alloy. Compd., 509 (2011), 5290.
- [15] IZAKI M., KATAYAMA J., J. Electrochem. Soc., 147 (2000), 210.
- [16] ISHIZAKI H., IMAIZUMI M., MATSUDA S., IZAKI M., ITO T., Thin Solid Films, 411 (2002), 65.
- [17] CALNAN S., RIEDEL W., GLEDHILL S., STANNOWSKI B., STEINER L.M.C., SCHLATMANN R., Thin Solid Films, 594 (2015), 215.
- [18] TSIN F., THOMERE A., BRIS A.L., COLLIN S., LINCOT D., ROUSSET J., ACS Appl. Mater. Inter., 8 (2016), 12298.
- [19] BARRET C.S., MASSALSKI T.B., Structure of Metals, Pergamon Press, Oxford, 1980.
- [20] PAWAR B.N., JADKAR S.R., TAKWALE M.G., J. Phys. Chem. Solids, 66 (2005), 1779.
- [21] CULLITY B.D., STOCK S.R., Elements of X-ray Diffraction, 2nd Ed., Prentice-Hall, Inc., New Jersey, 2001.
- [22] MAO C., FANG L., ZHANG H., LI W., WU F., QIN G., RUAN H., KONG C., J. Alloy. Compd., 676 (2016), 135.
- [23] SENOL S.D., OZTURK O., TERZIOGLU C., Ceram. Int., 41 (2015), 11194.
- [24] TSAY C.-Y., HSU W.-T., Ceram. Int., 39 (2013), 7425.
- [25] GAUDON M., TOULEMONDE O., DEMOURGUES A., Inorg. Chem., 46 (2007), 10996.
- [26] MURPHY A.B., Sol. Energ. Mat. Sol. C., 91 (2007), 1326.
Uwagi
PL
Opracowanie rekordu w ramach umowy 509/P-DUN/2018 ze środków MNiSW przeznaczonych na działalność upowszechniającą naukę (2018).
Typ dokumentu
Bibliografia
Identyfikator YADDA
bwmeta1.element.baztech-a5cdf2f2-a63d-4fb5-aafb-b32826c9a831