HfO2-HfOx Based Memristor with Different Size Active Layers

• Autorzy: Bibilashvili Amiran , Kushitashvili Zurab , Jangidze Larisa

Identyfikatory

DOI

10.29227/IM-2024-01-35

Warianty tytułu

PL

Memrystor na bazie HfO2-HfOx z warstwami aktywnymi o różnych rozmiarach

• Języki publikacji: EN

Abstrakty

EN

Memristore parameters are strongly depend on the size of active layers. In this paper is reported the outcomes of memristore created with different size active layers. There are considered 1µ, 5µ and 10µ diameter separated devices in the form of crossbar with HfO2 + HfOx active layer and tungsten top contact, titanium nitride botton contact and aluminum wiring contact. As substrate was used sapphire and active layers of memristore was deposited by reactive magnetron sputtering technology. With photolithography exposure system by new pothomask has been done 1µ, 5µ and 10µ diameter lithography for formation active layers and all contacts. Leakage currents dropped to 0.01mA, increased cicles of histeresis of I-V curves and dramatically increased Roff /Ron ratio to be 100000.

Słowa kluczowe

EN

electrical devices; memristor; active layer; photolithography

PL

urządzenia elektryczne; memrystor; warstwa aktywna; fotolitografia

• Wydawca: Polskie Towarzystwo Przeróbki Kopalin
• Czasopismo: Inżynieria Mineralna
• Rocznik: 2024
• Tom: Vol. 1, no. 1
• Strony: 317--327
• Opis fizyczny: Bibliogr. 7 p[oz., wykr.

Twórcy

autor

Bibilashvili Amiran

• LEPL Institute of Micro and Nanoelectronics, Chavchavadze ave.13, 0179 Tbilisi, Georgia
• Ivane Javakhishvili Tbilisi State University, Chavchavadze ave.1, 0179 Tbilisi, Georgia

• https://orcid.org/0000-0002-8153-4498

autor

Kushitashvili Zurab

• LEPL Institute of Micro and Nanoelectronics, Chavchavadze ave.13, 0179 Tbilisi, Georgia

• https://orcid.org/0000-0001-7140-3438

autor

Jangidze Larisa

• LEPL Institute of Micro and Nanoelectronics, Chavchavadze ave.13, 0179 Tbilisi, Georgia

• https://orcid.org/0000-0002-5972-3794

Bibliografia

• 1. L. Chua, “Resistance switching memories are memristors”, Applied Physics A, volume 102, pp 765–783, 2011.
• 2. L. O. Chua, “Memristor-the missing circuit element”, IEEE Trans. Circuit Theory, Vol. 18, pp. 507 – 519, Sep. 1971.
• 3. Nabeem Hashem and Shamik Das, “Switching-time analysis of binary-oxide memristors via a nonlinear model”, Appl. Phys. Lett. Volume 100, 262106, 27 June 2012.
• 4. Z. Kushitashvili, A. Bibilashvili and N. Biyikli, “Properties of Hafnium Oxide Received by Ultra Violet Stimulated Plasma Anodizing”, IEEE Transactions on Device and Materials Reliability, 17, 667-671, (2017).
• 5. A. Bibilashvili and Z. Kushitashvili, “C-V Measurement Of HfO2 Dielectric Layer Received by UV Stimulated Plasma Anodizing”, IOP Conf. Series: Earth and Enviromental Sciences, Volume 44, 2016.
• 6. A. Bibilashvili and Z. Kushitashvili, “Properties of TiO2/TiOx Active Layers and Fabrication Resistive Switching Device-Memristor”, International Journal of Nanoscience, World Scientific Publishing Company, Vol. 1, No. 1 1–4, (2019).
• 7. Z. Kushitashvili and A. Bibilashvili, “Improving Characteristic Parameters of Memristor Based on HfO2 Active Layer”, IOP Conf. Series: Earth and Enviromental Sciences, 906 (2021) 012018, doi:10.1088/1755-1315/906/1/012018.

Uwagi

Opracowanie rekordu ze środków MNiSW, umowa nr POPUL/SP/0154/2024/02 w ramach programu "Społeczna odpowiedzialność nauki II" - moduł: Popularyzacja nauki i promocja sportu (2025).