Numerical simulation study on NO oxidation by OH radical clusters in flue gas

• Autorzy: Wen Zhengcheng , Zhang Xiaofeng , Huang Ju , Yang Zhengyin

Identyfikatory

DOI

10.37190/epe230306

• Języki publikacji: EN

Abstrakty

EN

Fenton reaction is an important method to remove NO from flue gas. • OH radicals generated in the Fenton reaction can effectively oxidize NO to NO₂, which is absorbed and removed by alkali sorbent. To supply guidance for engineering research, numerical simulation of NO oxidation by • OH radical clusters in flue gas has been carried out using Fluent software. The average concentration of NO on the cross sections at various positions of a cylindrical pipe with a circular surface was calculated by simulation. Under various working conditions (temperature, • OH/NO molar ratio, NO concentration in flue gas, and jet velocity), NO oxidation efficiency by • OH radical was simulated and the key factors affecting NO oxidation were analyzed. The results show that temperature and • OH/NO molar ratio are the key factors affecting the oxidation of NO by • OH radicals. The injection velocity has also a significant effect on the oxidation efficiency while the moisture and oxygen content are minor factors influencing the process. The optimum oxidation efficiency of NO is obtained at 473–523 K, the molar ratio of • OH/NO ca. 1.4, the jet velocity 10 m/s, and the flue gas velocity of 3 m/s.

Słowa kluczowe

EN

Fenton reaction; nitric oxide; numerical simulation

PL

reakcja Fentona; tlenek azotu; symulacja numeryczna

• Wydawca: Oficyna Wydawnicza Politechniki Wrocławskiej
• Czasopismo: Environment Protection Engineering
• Rocznik: 2023
• Tom: Vol. 49, nr 3
• Strony: 69--82
• Opis fizyczny: Bibliogr. 25 poz., rys.

Twórcy

autor

Wen Zhengcheng

• College of Science, Hangzhou Dianzi University, Hangzhou, China, 310018

autor

Zhang Xiaofeng

• College of Science, Hangzhou Dianzi University, Hangzhou, China, 310018

autor

Huang Ju

• College of Science, Hangzhou Dianzi University, Hangzhou, China, 310018

autor

Yang Zhengyin

• College of Science, Hangzhou Dianzi University, Hangzhou, China, 310018

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