Impact of the active area position in a nitride tunnel junction vertical-cavity surface-emitting laser on its emission characteristics

• Autorzy: Śpiewak Patrycja , Wasiak Michał , Sarzała Robert P.

Identyfikatory

DOI

10.37190/oa200213

• Języki publikacji: EN

Abstrakty

EN

This paper presents results of numerical simulations of a nitride semiconductor vertical-cavity surface-emitting laser (VCSEL) with a tunnel junction. The modeled laser is based on a structure created at the University of California in Santa Barbara. The analysis concerns the impact of the position of laser’s active area on the emitted power. Both small detunings from the standing waveanti-node, and positioning of the active area at different anti-nodes are considered.

Słowa kluczowe

EN

GaN; computer simulations; tunnel junction; VCSEL; vertical-cavity surface-emitting laser

• Wydawca: Oficyna Wydawnicza Politechniki Wrocławskiej
• Czasopismo: Optica Applicata
• Rocznik: 2020
• Tom: Vol. 50, nr 2
• Strony: 301--310
• Opis fizyczny: Bibliogr. 18 poz., rys.

Twórcy

autor

Śpiewak Patrycja

• Institute of Physics, Lodz University of Technology, Wólczańska 219, 90-924 Łódź, Poland

autor

Wasiak Michał

• Institute of Physics, Lodz University of Technology, Wólczańska 219, 90-924 Łódź, Poland

autor

Sarzała Robert P.

• Institute of Physics, Lodz University of Technology, Wólczańska 219, 90-924 Łódź, Poland

Bibliografia

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