Investigation of optical properties of silicon oxynitride films deposited by RF PECVD method

• Autorzy: Kijaszek W. , Oleszkiewicz W. , Zakrzewski A. , Patela S. , Tłaczała M.

Identyfikatory

DOI

10.1515/msp-2016-0111

• Języki publikacji: EN

Abstrakty

EN

In this study, the authors deposited silicon oxynitride films by Radio Frequency Plasma Enhanced Chemical Vapour Deposition (RF PECVD) method. The research explores the relationship between the deposition process parameters and the optical properties of the deposited SiO_xN_y films. The optical constants of SiO_xN_y films were measured and calculated by spectroscopic ellipsometry method. Additionally, the authors investigated the possibility of controlling the deposited film composition by the flow ratio of different gaseous precursors: ammonia (NH₃), diluted silane (2%SiH₄ /98%N₂), nitrous oxide (N₂ O) and nitrogen (N₂). The gas mixture introduced to the working chamber during the growth of the film has the influence on the Si–O and Si–N bonds formation and the ratio between these bonds determines the refractive index of the deposited film.

Słowa kluczowe

EN

silicon oxynitride; RF PECVD; spectroscopic ellipsometry; reflection coefficient

• Wydawca: De Gruyter
• Czasopismo: Materials Science Poland
• Rocznik: 2016
• Tom: Vol. 34, No. 4
• Strony: 868--871
• Opis fizyczny: Bibliogr. 10 poz., rys.

Twórcy

autor

Kijaszek W.

• Division of Microelectronics and Nanotechnology, Faculty of Microsystem Electronics and Photonics, Wrocław University of Science and Technology, Janiszewskiego 11/17, 50-372 Wrocław, Poland

autor

Oleszkiewicz W.

• Division of Microelectronics and Nanotechnology, Faculty of Microsystem Electronics and Photonics, Wrocław University of Science and Technology, Janiszewskiego 11/17, 50-372 Wrocław, Poland

autor

Zakrzewski A.

• Division of Microsystems and Photonics, Faculty of Microsystem Electronics and Photonics, Wrocław University of Science and Technology, Janiszewskiego 11/17, 50-372 Wrocław, Poland

autor

Patela S.

• Division of Microsystems and Photonics, Faculty of Microsystem Electronics and Photonics, Wrocław University of Science and Technology, Janiszewskiego 11/17, 50-372 Wrocław, Poland

autor

Tłaczała M.

• Division of Microelectronics and Nanotechnology, Faculty of Microsystem Electronics and Photonics, Wrocław University of Science and Technology, Janiszewskiego 11/17, 50-372 Wrocław, Poland

Bibliografia

• [1] DO J. H., KANG H. S., KANG B. K., Microelectron Eng 85 (2008), 1820.
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• [5] LIU Y., LIN I.-K., ZHANG X., Mat Sci Eng: A 489, Iss 1–2 (2008), 294.
• [6] KIJASZEK W., OLESZKIEWICZ W., ZAKRZEWSKI A., PATELA S., TŁACZAŁA M., Proceedings of 2013 Inter national Young Students and Scientists “Photonics and Microsystems”, 1214.07.2013, St Marienthal, Germany, 42.
• [7] HUSSEIN M. G., WÖRHOFF K., SENGO G., DRIESSEN A., Thin Solid Films 515 (2007), 3779.
• [8] DUTTAGUPTA S., MA F., HOEX B., MUELLER T., ABERLE A. G., Energy Procedia 15 (2012), 78.
• [9] MAZUR M., SZYMAŃSKA M., KACZMAREK D., KALISZ M., WOJCIESZAK D., DOMARADZKI J., PLACIDO F., Appl Surf Sci 301 (2014), 63.
• [10] MAZUR M., WOJCIESZAK D., DOMARADZKI J., KACZMAREK D., SONG S., PLACIDO F., Opto Electron Rev 21(2), 233.

Uwagi

Opracowanie ze środków MNiSW w ramach umowy 812/P-DUN/2016 na działalność upowszechniającą naukę (zadania 2017).