Analysis of surface properties of semiconducting (Ti,Pd,Eu)O_x thin films

• Autorzy: Wojcieszak D. , Kaczmarek D. , Domaradzki J.

Identyfikatory

DOI

10.1515/oere-2016-0003

• Języki publikacji: EN

Abstrakty

EN

In this paper an analysis of the surface properties of (Ti,Pd,Eu)O_x thin films prepared by magnetron sputtering has been described. In particular, the results of composition and structure investigations were studied in relation to the surface state and optical properties. It was found that (Ti,Pd,Eu)O_x film was nanocrystalline and had a rutile structure. The average crystallites size was equal to 7.8 nm. Films were homogeneous and had densely packed grains. Investigation of the surface properties by XPS showed that titanium was present at 4+ state (in the TiO₂ form), palladium occurred as PdO₂ (also at 4+ state), while europium was in Eu₂O₃ form (at 3+ state). In comparison with the unmodiffied TiO₂, the coating with Pd and Eu additives had a rather high transparency (approx. 47%) in the visible light range, its optical absorption edge was shifted towards into the longer wavelengths (from 345 nm to 452 nm), and the width of optical energy gap Egopt was nearly twice lower (1.82 eV). Besides, the resistivity of (Ti,Pd,Eu)O_x at room temperature was 1×10³ Wcm. In the case of the film as-deposited on Si substrate (p-type) the generation of photocurrent as a response to light beam excitation (λ_exc = 527 nm) was observed.

Słowa kluczowe

EN

thin film; TiO2; palladium; europium; transparent oxide semiconductor; TOS

• Wydawca: Stowarzyszenie Elektryków Polskich ; Polska Akademia Nauk ; Wojskowa Akademia Techniczna im. Jarosława Dąbrowskiego
• Czasopismo: Opto-Electronics Review
• Rocznik: 2016
• Tom: Vol. 24, No. 1
• Strony: 15--19
• Opis fizyczny: Bibliogr. 19 poz., wykr.

Twórcy

autor

Wojcieszak D.

• Faculty of Microsystem Electronics and Photonics, Wroclaw University of Technology, ul. Janiszewskiego 11/17, 50-372 Wrocław, Poland

autor

Kaczmarek D.

• Faculty of Microsystem Electronics and Photonics, Wroclaw University of Technology, ul. Janiszewskiego 11/17, 50-372 Wrocław, Poland

autor

Domaradzki J.

• Faculty of Microsystem Electronics and Photonics, Wroclaw University of Technology, ul. Janiszewskiego 11/17, 50-372 Wrocław, Poland

Bibliografia

• 1. U. Diebold, “The surface science of titanium dioxide”, Surf. Sci. Rep. 48, 53-229 (2003).
• 2. D. Kaczmarek, “Modyfikacja wybranych właściwości cienkich warstw TiO2”, Oficyna Wydawnicza Politechniki Wrocławskiej, Wrocław (2008) (IN POLISH).
• 3. G. Li, L. Chen, M.E. Graham, and A.K. Gray, “A comparison of mixed phase titania photocatalysts prepared by physical and chemical methods: The importance of the solid-solid interface”, J. Mol. Cat. A 275, 30-35 (2007).
• 4. J. Domaradzki, “Powłoki optyczne na bazie TiO2”, Oficyna Wydawnicza Politechniki Wroc., Wrocław, (2010) (IN POLISH).
• 5. W. Choi, A. Termin, and M.R. Hoffmann, “The role of metal ion dopants in quantum-sized TiO2: Correlation between photoreactivity and charge carrier recombination dynamics”, J. Phys. Chem. 98, 13669-13679 (1994).
• 6. K.L. Frindell, M.H. Bartl, M.R. Robinson, G.C. Bazan, A. Popitsch, and G.D. Stucky, “Visible and near-IR luminescence via energy transfer in rare earth doped mesoporous titania thin films with nanocrystalline walls“, J. Sol. St. Chem. 172, 81-88 (2003).
• 7. J. Domaradzki, D. Kaczmarek, A. Borkowska, D. Schmeisser, S. Mueller, R. Wasielewski, A. Ciszewski, and D. Wojcieszak, “Influence of annealing on the structure and stoichiometry of europium doped titanium dioxide thin films”, Vacuum 82, 1007-1012 (2008).
• 8. Y.Q. Hou, D.M. Zhuang, G. Zhang, M. Zhao, and M.S. Wu, “Influence of annealing temperature on the properties of titanium oxide thin film”, Appl. Surf. Sci. 218, 97-105 (2003).
• 9. Y. Shimizu, T. Hyodo, and M. Egashira, “H2 sensing performance of anodically oxidized TiO2 thin films equipped with Pd electrode”, Sens. Act. B 121, 219-230 (2007).
• 10. D. Mardare, N. Iftimie, M. Crisan, M. Raileanu, A. Yildiz, T. Coman, K. Pomoni, and A. Vomvas, “Electrical conduction mechanism and gas sensing properties of Pd-doped TiO2 films”, J. Non-Cryst. Sol. 357, 1774-1779 (2011).
• 11. D. Kaczmarek, J. Domaradzki, and A. Borkowska, “Microanalysis of Pd and V-doped TiO2 thin films prepared by sputtering”, TSF 515, 6347-6349 (2007).
• 12. M. Saif and M.S.A. Abdel-Mottaleb, “Titanium dioxide nanomaterial doped with trivalent lanthanide ions of Tb, Eu and Sm: Preparation, characterization and potential applications”, Inorg. Chim. Acta 360, 2863 (2007).
• 13. J. Domaradzki, D. Kaczmarek, and A. Borkowska, “Electrical and optical properties of transparent oxide semiconductors (TOSs) based on Eu,Pd- and Tb,Pd-doped TiO2”, Phys. Stat. Sol. A 205, 1967-1990 (2008).
• 14. D. Kaczmarek, J. Domaradzki, E.L. Prociow, T. Berlicki, and K. Prociow, “TiO2 thin films moped with Pd and Eu for optically and electrically active TOS-Si heterojunctions”, Opt. Mat. 31, 1337-1339 (2009).
• 15. J. Domaradzki, D. Kaczmarek, E.L. Prociow, A. Borkowska, T. Berlicki, and K. Sieradzka, “Optical and electric al properties of TiO2 doped with Tb and Pd”, Mat. Sci. Pol. 26 (2008).
• 16. J. Domaradzki, D. Kaczmarek, B. Adamiak, J. Dora, and S. Maguda, Patent application no. P. 396389, 2011.
• 17. I. Horcas, R. Fernandez, J.M. Gomez-Rodriguez, J. Colchero, J.W. Gomez-Herrero, and A.M. Baro, “WSXM: A software for scanning probe microscopy and a tool for nanotechnology”, Rev. Sci. Instrum. 78, 013705 (2007).
• 18. A.A. Gribb and J.F. Banfield, “Particle size effects on transformation kinetics and phase stability in nanocrystalline TiO2”, Amer. Miner. 82, 717-728 (1997).
• 19. J. Tauc, “Absorption edge and internal electric fields in amorphous semiconductors”, Mater. Res. Bull. 5, 721-729 (1970).

Uwagi

PL

Opracowanie ze środków MNiSW w ramach umowy 812/P-DUN/2016 na działalność upowszechniającą naukę.