Metrology of Mo/Si multilayer mirrors at 13.5 nm with the use of a laser-produced plasma extreme ultraviolet (EUV) source based on a gas puff target

• Autorzy: Rakowski R. , Bartnik A. , Fiedorowicz H. , Jarocki R. , Kostecki J. , Krzywinski J. , Mikolajczyk J. , Pina L. , Ryc L. , Szczurek M. , Ticha H. , Wachulak P.
• Języki publikacji: EN

Abstrakty

EN

In this paper an application of a recently developed laser plasma source of extreme ultraviolet (EUV) for optical measurements of optical characteristics of Mo/Si multilayer mirrors is presented. The source is based on an xenon-helium double-stream gas puff target irradiated with laser pulses from a Nd : YAG laser system (E = 0.55 J, t = 3.9 ns, f = 10 Hz, M 2 = 2.5). The results show that the source can be useful for EUV lithography technologies as a metrology tool in the semiconductor industry.

Słowa kluczowe

EN

laser-produced plasma extreme ultraviolet (EUV) source; gas puff target; Mo/Si mirrors; EUV spectroscopy

• Wydawca: Oficyna Wydawnicza Politechniki Wrocławskiej
• Czasopismo: Optica Applicata
• Rocznik: 2006
• Tom: Vol. 36, nr 4
• Strony: s. 593--600
• Opis fizyczny: Bibliogr. 10 poz., rys., wykr.

Twórcy

autor

Rakowski R.

• Institute of Optoelectronics, Military University of Technology, Kaliskiego 2, 00-908 Warsaw, Poland

autor

Bartnik A.

• Institute of Optoelectronics, Military University of Technology, Kaliskiego 2, 00-908 Warsaw, Poland

autor

Fiedorowicz H.

• Institute of Optoelectronics, Military University of Technology, Kaliskiego 2, 00-908 Warsaw, Poland

autor

Jarocki R.

• Institute of Optoelectronics, Military University of Technology, Kaliskiego 2, 00-908 Warsaw, Poland

autor

Kostecki J.

• Institute of Optoelectronics, Military University of Technology, Kaliskiego 2, 00-908 Warsaw, Poland

autor

Krzywinski J.

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland

autor

Mikolajczyk J.

• Institute of Optoelectronics, Military University of Technology, Kaliskiego 2, 00-908 Warsaw, Poland

autor

Pina L.

• Czech Technical University, Faculty of Nuclear Sciences and Physical Engineering, Brehova 7, 115 19 Prague 1, Czech Republic

autor

Ryc L.

• Institute of Plasma Physics and Laser Microfusion, Hery 23, 01-497 Warsaw, Poland

autor

Szczurek M.

• Institute of Optoelectronics, Military University of Technology, Kaliskiego 2, 00-908 Warsaw, Poland

autor

Ticha H.

• REFLEX s.r.o., Novodvorska 994, 14200 Prague 4, Czech Republic

autor

Wachulak P.

• Institute of Optoelectronics, Military University of Technology, Kaliskiego 2, 00-908 Warsaw, Poland
• Colorado State University, Fort Collins, CO 80523, USA

Bibliografia

• [1] STUIK R., LOUIS E., YAKSHIN A.E., GÖRTS P.C., MAAS E.L.G., BIJKERK F., SCHMITZ D., SCHOLZE F., ULM G., HAIDL M., Peak and integrated reflectivity, wavelength and gamma optimization of Mo/Si, and Mo/Be multilayer, multielement optics for extreme ultraviolet lithography, Journal of Vacuum Science and Technology B 17(6), 1999, pp. 2998–3002.
• [2] BANINE V., MOORS R., Plasma sources for EUV lithography exposure tools, Journal of Physics D: Applied Physics 37, 2004, pp. 3207–12.
• [3] FIEDOROWICZ H., BARTNIK A., JAROCKI R., RAKOWSKI R., SZCZUREK M., Enhanced X-ray emission in the 1 keV range from a laser-irradiated gas puff target produced using the double-nozzle setup, Applied Physics B: Lasers and Optics 70(2), 2000, pp. 305–8.
• [4] FIEDOROWICZ H., BARTNIK A., JAROCKI R., KOSTECKI J., KRZYWIŃSKI J., MIKOŁAJCZYK J., RAKOWSKI R., SZCZUREK A., SZCZUREK M., Compact laser plasma EUV source based on a gas puff target for metrology applications, Journal of Alloys and Compounds 401(1–2), 2005, pp. 99–103.
• [5] O’SULLIVAN G., FAULKNER R., Tunable narrowband soft X-ray source for projection lithography, Optical Engineering 33(12), 1994, pp. 3978–83.
• [6] NAKAI M., NISHIMURA H., SHIGEMORI K., MIYANAGA N., NORIMATSU T., NAGAI K., MATSUI R., HIBINO T., OKUNO T., SOHBATZADEH F.S., TAO Y., HASHIMOTO K., YAMAURA M., FUJIOKA S., NAGATOMO H., ZHAKHOVCKII V., NISHIHARA K., UCHIDA S., SHIMADA Y., FURUKAWA H., NAKATSUKA M., IZAWA Y., Study on EUV emission properties of laser-produced plasma at ILE, Osaka, Proceedings of SPIE 5196, 2004, pp. 289–97.
• [7] O’SULLIVAN G., CUMMINGS A., DUNNE P., HAYDEN P., MCKINNEY L., MURPHY N., WHITE J., Atomic physics of highly charged ions and the case for Sn as a source material, [In] EUV Sources for Lithography, [Ed.] V. Bakshi, SPIE 2006, p. 149.
• [8] http://www-cxro.lbl.gov.
• [9] DE BRUIJN R., KOSHELEV K., KOOIJMAN G., TOMA E.S., BIJKERK F., Absorption of EUV laser plasmas generated on xenon gas jets, Journal of Quantitative Spectroscopy and Radiative Transfer 81(1), 2003, pp. 97–105.
• [10] FIEDOROWICZ H., BARTNIK A., SZCZUREK M., DAIDO H., SAKAYA N., KMETIK V., KATO Y., SUZUKI M., MATSUMURA M., TAJIMA J., NAKAYAMA T., WILHEIN T., Investigations of soft X-ray emission from a gas puff target irradiated with a Nd:YAG laser, Optics Communications 163(1–3), 1999, pp. 103–14.