Modelling and Simulation of Normally-Off AlGaN/GaN MOS-HEMTs

• Autorzy: Taube A. , Sochacki M. , Szmidt J. , Kamińska E. , Piotrowska A.

Identyfikatory

DOI

10.2478/eletel-2014-0032

• Języki publikacji: EN

Abstrakty

EN

The article presents the results of modelling and simulation of normally-off AlGaN/GaN MOS-HEMT transistors. The effect of the resistivity of the GaN:C layer, the channel mobility and the use of high-κ dielectrics on the electrical characteristics of the transistor has been examined. It has been shown that a low leakage current of less than 10⁻⁶ A/mm can be achieved for the acceptor dopant concentration at the level of 5×10¹⁵cm⁻³. The limitation of the maximum on-state current due to the low carrier channel mobility has been shown. It has also been demonstrated that the use of HfO₂, instead of SiO₂, as a gate dielectric increases on-state current above 0.7A/mm and reduces the negative influence of the charge accumulated in the dielectric layer.

Słowa kluczowe

EN

gallium nitride; MOS-HEMT; high electron mobility; transistor; AlGaN; GaN; simulation

• Wydawca: Polish Academy of Sciences, Committee of Electronics and Telecommunication
• Czasopismo: International Journal of Electronics and Telecommunications
• Rocznik: 2014
• Tom: Vol. 60, No. 3
• Strony: 253--258
• Opis fizyczny: Bibliogr. 15 poz., wykr.

Twórcy

autor

Taube A.

• Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warsaw, Poland
• Institute of Microelectronics and Optoelectronics, Warsaw University of Technology, Koszykowa 75, 00-662 Warsaw, Poland

autor

Sochacki M.

• Institute of Microelectronics and Optoelectronics, Warsaw University of Technology, Koszykowa 75, 00-662 Warsaw, Poland

autor

Szmidt J.

• Institute of Microelectronics and Optoelectronics, Warsaw University of Technology, Koszykowa 75, 00-662 Warsaw, Poland

autor

Kamińska E.

• Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warsaw, Poland

autor

Piotrowska A.

• Institute of Electron Technology, Al. Lotników 32/46, 02-668 Warsaw, Poland

Bibliografia

• [1] B.J. Baliga: Gallium nitride devices for power electronic applications, Semicond. Sci. Technol., 28, 074011, (2013).
• [2] W.Saito et al.: Recessed-gate structure approach toward normally off high-voltage AlGaN/GaN HEMT for power electronics applications, IEEE Tran. on Electron Devices, vol.53, no.2, pp.356-362, (2006).
• [3] Y.Cai et al.: High-performance enhancement-mode AlGaN/GaN HEMTs using fluoride-based plasma treatment, IEEE Elec. Dev. Letters, vol.26, no.7, pp. 435–437,(2005).
• [4] O.Hilt et al.: Normally-off AlGaN/GaN HFET with p-type GaN Gate and AlGaN buffer, Proceedings of 22nd Int. Symp. on Power Semiconductor Devices & IC’s (ISPSD), pp.347-350, (2010).
• [5] K.-S. Im et al.: Normally Off GaN MOSFET Based on AlGaN/GaN Heterostructure with Extremely High 2DEG Density Grown on Silicon Substrate, IEEE Elec. Dev. Letters, vol.31, no.3, pp.192-194, (2010).
• [6] http://www.silvaco.com/products/tcad/device\_simulation/atlas/atlas.html
• [7] J.L. Lyons, A. Janotti, C.G. Van de Walle: Carbon impurities and the yellow luminescence in GaN, App. Phys. Lett. 97, 152108, (2010).
• [8] M.J. Uren et al.: Buffer design to minimize current collapse in GaN/AlGaN HFETs, IEEE Tran. on Electron Devices, vol.59, no.12, pp.3327-3333, (2012).
• [9] H. Morkoc, Handbook of Nitride Semiconductors and Devices, Volume 1, Materials Properties, Physics and Growth. Wiley, Weinheim (2009).
• [10] M. Farahmand et al.: Monte Carlo simulation of electron transport in the III-nitride wurtzite phase materials system: Binaries and ternaries. IEEE Trans. Electron Devices, vol. 48, no. 3, pp. 535–542, (2001).
• [11] Y. Wang et al.: High-performance normally-Off Al2O3/GaN MOSFET using a wet etching-based gate recess technique, IEEE Tran. on Electron Devices, vol.34, no.11, pp.1370-1372, (2012).
• [12] Y. Niiyama et al.: Normally off operation GaN-based MOSFETs for power electronics applications, Semicond. Sci. Technol., 25, 125006, (2010).
• [13] T.E. Cook Jr. et al.: Measurement of the band offsets of SiO2 on clean n- and p-type GaN(0001), J. Appl. Phys. 93, 3995, (2003).
• [14] J.J. Freedsman et al.: Normally-off Al2O3/AlGaN/GaN MOS-HEMT on 8 in. Si with low leakage current and high breakdown voltage (825 V), Appl. Phys. Express, 7, 04100, (2014).
• [15] W. Ahn et al.: Normally-off AlGaN/GaN MOS-HEMTs by KOH wet etch and RF-sputtered HfO2 gate insulator, Proceedings of 25th Int. Symp. on Power Semiconductor Devices & IC’s (ISPSD), pp.311-314, (2013).