On changing the properties of a multilayer structure by preliminary processing of a substrate

• Autorzy: Pankratov Evgeny L.

Identyfikatory

DOI

10.7494/cmms.2022.2.0790

• Języki publikacji: EN

Abstrakty

EN

In this paper, the effect of the preliminary processing of a substrate on the properties of a grown heterostructure is investigated. It is shown that the growth of an epitaxial layer on a buffer layer after preliminary annealing (before the growth) makes it possible to decrease the value of mismatch-induced stress. An analytical approach has been introduced for the analysis of mass and heat transfer in a multilayer structure accounting for mismatch-induced stress.

Słowa kluczowe

EN

gas phase epitaxy; improvement of properties of films; analytical approach for modeling

• Wydawca: Wydawnictwa AGH
• Czasopismo: Computer Methods in Materials Science
• Rocznik: 2022
• Tom: Vol. 22, No. 2
• Strony: 89--100
• Opis fizyczny: Bibliogr. 25 poz., rys.

Twórcy

autor

Pankratov Evgeny L.

• Nizhny Novgorod State University, 23 Gagarin Avenue, Nizhny Novgorod, 603950, Russia
• Privolzhsky Research Medical University, 10/1 Minin and Pozharsky square, Nizhny Novgorod, 603950, Russia

• https://orcid.org/0000-0001-6174-2612

Bibliografia

• Bravo-García, Y.E., Rodríguez-Fragoso, P., Mendoza-Alvarez, J.G., Gonzalez de la Cruz, G. (2015). Growth and characterization of InAsSb layers on GaSb substrates by liquid phase epitaxy. Materials Science in Semiconductor Processing, 40, 253–256. https://doi.org/10.1016/j.mssp.2015.06.062.
• Carslaw, H.S., Jaeger, J.C. (1964). Conduction of Heat in Solids. Clarendon Press.
• Chakraborty, A., Xing, H., Craven, M.D., Keller, S., Mates, T., Speck, J.S., DenBaars, S.P., Mishra, U.K. (2004).Nonpolar a-plane p-type GaN and p-n Junction Diodes. Journal of Applied Physics, 96(8), 4494. https://doi.org/10.1063/1.1790065.
• Gotra, Z.Yu. (1991). Tekhnologiya mikroelektronnykh ustroystv. Radio i svyaz’ [Готра, З.Ю. (1991). Технология микроэлектронных устройств. Радио и связь].
• Gusev, V.G., Gusev, Yu.M. (1991). Elektronika. Vysshaya shkola [Гусев, В.Г., Гусев, Ю.М. (1991). Электроника. Высшая школа].
• Korn, G.A., & Korn, T.M. (1968). Mathematical Handbook for Scientists and Engineers. Definitions, Theorems and Formulas for Reference and Review (2nd ed.). McGraw-Hill Book Company.
• Lachin, V.I., Savelov, N.S. (2001). Elektronika. Feniks [Лачин, В.И., Савелов, Н.С. (2001). Электроника. Феникс].
• Landau, L.D., & Lifshits, Ye.M. (2001). Teoreticheskaya fizika (7: Teoriya uprugosti). Fizmatlit [Ландау, Л.Д., & Лифшиц, Е.М. (2001). Теоретическая физика (7: Теория упругости). ФИЗМАТЛИТ].
• Li, Y., Antonuk, L.E., El-Mohri, Y., Zhao, Q., Du, H., Sawant, A., & Wang, Y. (2006). Effects of x-ray irradiation on polycrystalline silicon, thin-film transistors. Journal of Applied Physics, 99(6), 1–7. https://doi.org/10.1063/1.2179149.
• Lundin, V.V., Sakharov, A.V., Zavarin, E.E., Sinitsyn, M.A., Nikolaev, A.E., Mikhailovsky, G.A., Brunkov, P.N., Goncharov, V.V., Ber, B.Y., Kazantsev, D.Y., & Tsatsulnikov, A.F. (2009). Effect of carrier gas and doping profile on the surface morphology of MOVPE grown heavily doped GaN:Mg layers. Semiconductors, 43(7),963–967. https://doi.org/10.1134/S1063782609070276.
• Mitsuhara, M., Ogasawara, M., & Sugiura, H. (1998). Beryllium doping of InP during metalorganic molecular beam epitaxy using bismethylcyclopentadienyl-beryllium. Journal of Crystal Growth, 183(1), 38–42. https://doi.org/10.1016/S0022-0248(97)00336-9.
• Pankratov, E.L. (2012). Decreasing of depth of p-n-junction in a semiconductor heterostructure by serial radiation processing and microwave annealing. Journal of Computational and Theoretical Nanoscience, 9(1), 41–49.https://doi.org/10.1166/jctn.2012.1994.
• Pankratov, E.L., & Bulaeva, E.A. (2012). Decreasing of quantity of radiation defects in an implanted-junction rectifiers by using overlayers. International Journal of Micro-Nano Scale Transport, 3(3–4), 119–130, http://doi.org/10.1260/1759-3093.3.3-4.119.
• Pankratov, E.L., & Bulaeva, E.A. (2013a). About controlling of regimes of heating during growth a heterostructures from gas phase. Universal Journal of Materials Science, 1(4), 180–200. https://www.doi.org/10.13189/ujms.2013.010402.
• Pankratov, E.L., & Bulaeva, E.A. (2013b). Application of native inhomogeneities to increase compactness of vertical field-effect transistors. Journal of Computational and Theoretical Nanoscience, 10(4), 888–893. https://doi.org/10.1166/jctn.2013.2785.
• Pankratov, E.L., & Bulaeva, E.A. (2013c). Doping of materials during manufacture p-n-junctions and bipolar transistors. Analytical approaches to model technological approaches and ways of optimization of distributions of dopants. Reviews in Theoretical Science, 1(1), 58–82. https://doi.org/10.1166/rits.2013.1004.
• Pankratov, E.L., & Bulaeva, E.A. (2013d). Optimal criteria to estimate temporal characteristics of diffusion process in a media with inhomogenous and nonstationary parameters. Analysis of influence of variation of diffusion coefficient on values of time characteristics. Reviews in Theoretical Science, 1(3), 305–316. https://doi.org/10.1166/rits.2013.1009.
• Pankratov, E.L., & Bulaeva, E.A. (2015). On prognosis of epitaxy from gas phase process to improve properties of epitaxial layers. 3D Research, 6(4), 46–56. https://doi.org/10.1007/s13319-015-0073-4.
• Sokolov, Y.D. (1955). About the definition of dynamic forces in the mine lifting. Applied Mechanics, 1(1), 23–35.
• Sorokin, L.M., Veselov, N.V., Shcheglov, M.P., Kalmykov, A.E., Sitnikova, A.A., Feoktistov, N.A., Osipov, A.V., & Kukushkin, S.A. (2008). Electron-microscopic investigation of a SiC/Si(111) structure obtained by solid phase epitaxy. Technical Physics Letters, 34(11), 992–994. https://doi.org/10.1134/S1063785008110278.
• Stepanenko, I.P. (1980). Osnovy mikroelektroniki. Sovetskoye radio [Степаненко, И.П. (1980). Основы микроэ-лектроники. Советское радио].
• Taguchi, H., Miyake, S., Suzuki, A., Kamiyama, S., & Fujiwara, Y. (2016). Evaluation of crystallinity of GaN epitaxial layer after wafer dicing. Materials Science in Semiconductor Processing, 41, 89–91. https://doi.org/10.1016/j.mssp.2015.07.083.
• Talalaev, R.A., Yakovlev, E.V., Karpov, S.Yu, & Makarov, Yu N. (2001). On low temperature kinetic effects in metalorganic vapor phase epitaxy of III–V compounds. Journal of Crystal Growth, 230(1–2), 232–238. https://doi.org/10.1016/S0022-0248(01)01354-9.
• Vorob’ev, A.A., Korablev, V.V., & Karpov, S.Yu (2003). The use of magnesium to dope gallium nitride obtained by molecular-beam epitaxy from activated nitrogen. Semiconductors, 37(7), 838–842. https://doi.org/10.1134/1.1592861.
• Zhang, Y.W., & Bower, A.F. (1999). Numerical simulations of island formation in a coherent strained epitaxial thin film system. Journal of the Mechanics and Physics of Solids, 47(11), 2273–2297. https://doi.org/10.1016/S0022-5096(99)00026-5.

Uwagi

Opracowanie rekordu ze środków MEiN, umowa nr SONP/SP/546092/2022 w ramach programu "Społeczna odpowiedzialność nauki" - moduł: Popularyzacja nauki i promocja sportu (2022-2023).