Characteristics of GZO/IZO Dual-Layer as an Electron Transport Layer in Dye-Sensitized Solar Cell

• Autorzy: Manzari Tavakoli M. H. , Ahmadi M. , Sabet M.

Identyfikatory

DOI

10.24425/amm.2018.125084

• Języki publikacji: EN

Abstrakty

EN

GZO/IZO semiconductor thin films were prepared on the ITO substrate via sol-gel spin coating method for using in the dye-sensitized solar cells (DSSCs). For this purpose, GZO and IZO thin films were optimized by the percentage of doping gallium and indium in zinc oxide and were studied their electrical, optical and structural properties. After that, the layers with the best performance were selected for use in the DSSCs. The concentration of all solutions for spin coating processes was 0.1 M and zinc oxide has been doped with gallium and indium, with different doping percentages (0, 0.5, 1, 2 and 4 volume percentage). So, by studying the properties of the fabricated thin films, it was found the films with 0.5%GZO and 0.5%IZO have the best performance and hence, the optimized dual-layer (0.5% GZO/0.5% IZO (GIZO)) were prepared and studied their electrical and optical properties. The synthesized optimized dual-layer film was successfully used as the working electrode for dye-sensitized solar cells. The sample with 0.5%IZO shows the 9.1 mA/cm² short-circuit current density, 0.52 V open circuit voltage, 63% fill factor and 2.98% efficiency.

Słowa kluczowe

EN

dual-layer; sol-gel; spin coating; thin film; GIZO; solar cell

• Wydawca: Institute of Metallurgy and Materials Science of Polish Academy of Sciences ; Committee of Materials Engineering and Metallurgy of Polish Academy of Sciences
• Czasopismo: Archives of Metallurgy and Materials
• Rocznik: 2018
• Tom: Vol. 63, iss. 4
• Strony: 1609--1614
• Opis fizyczny: BIbliogr. 20 poz., fot., rys., tab.

Twórcy

autor

Manzari Tavakoli M. H.

• Vali-e-Asr University of Rafsanjan, Faculty of Science, Department of Physics, Rafsanjan 7718897111, Iran

autor

Ahmadi M.

• Vali-e-Asr University of Rafsanjan, Faculty of Science, Department of Physics, Rafsanjan 7718897111, Iran

autor

Sabet M.

• Vali-e-Asr University of Rafsanjan, Faculty of Science, Department of Chemistry, Rafsanjan 7718897111, Iran

Bibliografia

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Uwagi

PL

Opracowanie rekordu w ramach umowy 509/P-DUN/2018 ze środków MNiSW przeznaczonych na działalność upowszechniającą naukę (2018).