Structural and electrical properties of Nb-doped Bi7Ti4.5W0.5O21 intergrowth piezoelectric ceramics

• Autorzy: Zhuang Junsheng , Jiang Xiangping , Chen Chao , Jiang Xingan , Huang Xiaokun , Nie Xin , Jiang Yujian

Warianty tytułu

PL

Właściwości strukturalne i elektryczne piezoelektrycznej przerostowo uwarstwionej ceramiki Bi7Ti4,5W0,5O21 domieszkowej Nb

• Języki publikacji: EN

Abstrakty

EN

New layer-structured lead-free piezoelectric ceramics Bi7Ti4.5-xW0.5NbxO21 (BTW-BIT-xNb) (0.00 ≤ x ≤ 0.50) with high Curie temperature TC (up to 690 ℃) have great potential for high temperature applications. However, this material system receives far less attention by researchers due to its poor piezoelectric performance. In the present study, the crystal structure, microstructure and electrical properties of samples with different content of Nb were studied detailedly. The structural characterization by XRD patterns Rietveld refinements and Raman scattering analysis shows that Nb5+ substituted for B-site Ti4+ ion located in the pseudo perovskite blocks and enhanced the orthorhombic distortion, leading to the increasing Curie temperature in the range of 692-762 ℃. The substitution of Nb5+ for Ti4+ acts as donor doping, which effectually reduces the amount of oxygen vacancies, and consequently lowers dielectric loss tgδ. The piezoelectric properties of Nb-doped samples were improved with a maximum piezoelectric constant d33 of 14.3 pC/N obtained in BTW-BIT-0.05Nb sample, which is approximately double that of pure BTW-BIT (~7.3 pC/N). Above results reveal that Nb doped BTW-BIT ceramic system overcomes the difficult coordination between piezoelectric performances and Curie temperature, and realizes the common enhancement of piezoelectric performances and Curie temperature, which is of great value for promoting the practical application of high-temperature piezoelectric ceramics

PL

Nowa bezołowiowa ceramika piezoelektryczna o strukturze warstwowej Bi7Ti4,5-xW0,5NbxO21 (BTW-BIT-xNb) (0,00 ≤ x ≤ 0,50) z wysoką temperaturą Curie TC (do 690 ℃) ma ogromny potencjał do zastosowań w wysokich temperaturach. Jednak ten system materiałowy cieszy się znacznie mniejszym zainteresowaniem ze względu na słabą wydajność piezoelektryczną. W niniejszym badaniu szczegółowo zbadano strukturę krystaliczną, mikrostrukturę i właściwości elektryczne próbek o różnej zawartości Nb. Charakterystyka strukturalna za pomocą analizy Rietvelda dyfraktogramów rentgenowskich i analiza rozpraszania Ramana pokazują, że Nb5+ zastąpił jon Ti4+ w miejscu B znajdujący się w blokach pseudoperowskitu i zwiększył zniekształcenie rombowe, prowadząc do wzrostu temperatury Curie w zakresie 692-762 ℃. Zastąpienie Ti4+ przez Nb5+ działa jak domieszkowanie donorowe, co skutecznie zmniejsza ilość wakancji tlenowych, a tym samym obniża straty dielektryczne tanδ. Właściwości piezoelektryczne próbek domieszkowanych Nb zostały poprawione dzięki maksymalnej stałej piezoelektrycznej d33 wynoszącej 14,3 pC/N, uzyskanej w próbce BTW-BIT-0,05Nb, która jest w przybliżeniu dwukrotnie większa niż czystej BTW-BIT (~7,3 pC/N). Powyższe wyniki pokazują, że system ceramiczny BTW-BIT z domieszką Nb przezwycięża trudne koordynowanie wydajności piezoelektrycznej z temperaturą Curie i realizuje równoczesne polepszenie właściwości piezoelektrycznych i temperatury Curie, co ma wielkie znaczenie dla promowania praktycznego zastosowania wysokotemperaturowej ceramiki piezoelektrycznej

Słowa kluczowe

EN

intergrowth bismuth layered ceramics; BTW-BIT-xNb; dielectric properties; piezoelectric performance

PL

przerostowo uwarstwowana ceramika biz; BTW-BIT-xNb; właściwości dielektryczne; wydajność piezoelektryczna

• Wydawca: Polskie Towarzystwo Ceramiczne
• Czasopismo: Materiały Ceramiczne
• Rocznik: 2019
• Tom: T. 71, nr 4
• Strony: 341--349
• Opis fizyczny: Bibliogr. 48 poz., rys.

Twórcy

autor

Zhuang Junsheng

• Jiangxi Key Laboratory of Advanced Ceramic Materials, College of Material Science and Engineering, Jingdezhen Ceramic Institute, Jingdezhen, 333403, China

autor

Jiang Xiangping

• Jiangxi Key Laboratory of Advanced Ceramic Materials, College of Material Science and Engineering, Jingdezhen Ceramic Institute, Jingdezhen, 333403, China

autor

Chen Chao

• Jiangxi Key Laboratory of Advanced Ceramic Materials, College of Material Science and Engineering, Jingdezhen Ceramic Institute, Jingdezhen, 333403, China

autor

Jiang Xingan

• Jiangxi Key Laboratory of Advanced Ceramic Materials, College of Material Science and Engineering, Jingdezhen Ceramic Institute, Jingdezhen, 333403, China

autor

Huang Xiaokun

• Jiangxi Key Laboratory of Advanced Ceramic Materials, College of Material Science and Engineering, Jingdezhen Ceramic Institute, Jingdezhen, 333403, China

autor

Nie Xin

• Jiangxi Key Laboratory of Advanced Ceramic Materials, College of Material Science and Engineering, Jingdezhen Ceramic Institute, Jingdezhen, 333403, China

autor

Jiang Yujian

• Jiangxi Key Laboratory of Advanced Ceramic Materials, College of Material Science and Engineering, Jingdezhen Ceramic Institute, Jingdezhen, 333403, China

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Uwagi

PL

Opracowanie rekordu ze środków MNiSW, umowa Nr 461252 w ramach programu "Społeczna odpowiedzialność nauki" - moduł: Popularyzacja nauki i promocja sportu (2020).