Influence of Chirped DBR Reflector on the Absorption Efficiency of Multi-nanolayer Photovoltaic Structures: Wavelength-scale Analysis by the Method of Single Expression

• Autorzy: Baghdasaryan H. , Knyazyan T. , Hovhannisyan T. , Mardoyan G. , Marciniak M. , Benson T.

Identyfikatory

DOI

10.26636/jtit.2017.120117

• Języki publikacji: EN

Abstrakty

EN

An electromagnetic wavelength-scale analysis of the optical characteristics of multi-nanolayer photovoltaic (PV) structures: without an antireflection coating, with an antireflection coating on the top of the structure, and with both the antireflection coating on the top and a broadband non-periodic (chirped) distributed Bragg reflector (DBR) on the bottom of the structure is performed. All the PV structures studied are based on a Si p-i-n type absorber supported by a metallic layer (Cu) and SiO2 substrate. The top-to-bottom electromagnetic analysis is performed numerically by the method of single expression (MSE). Absorbing and reflecting characteristics of the multi-nanolayer PV structures are obtained. The influence of the thicknesses and permittivities of the layers of the PV structures on the absorbing characteristics of the structures is analyzed to reveal favourable configurations for enhancement of their absorption efficiency. The localizations of the electric component of the optical field and the power flow distribution within all the PV structures considered are obtained to confirm an enhancement of the absorption efficiency in the favorable configuration. The results of the electromagnetic wavelength-scale analysis undertaken will have scientific and practical importance for optimizing the operation of thin-filmmulti-nanolayer PV structures incorporating a chirped DBR reflector with regards to enhancing their efficiency.

Słowa kluczowe

EN

antireflection coating; chirped distributed Bragg reflector; electromagnetic modeling; method of single expression; multi-nanolayer photovoltaic structure; photovoltaics

• Wydawca: Instytut Łączności - Państwowy Instytut Badawczy
• Czasopismo: Journal of Telecommunications and Information Technology
• Rocznik: 2017
• Tom: nr 3
• Strony: 99--106
• Opis fizyczny: Bibliogr. 25 poz., rys., tab.

Twórcy

autor

Baghdasaryan H.

• National Instruments AM LLC, 123 Hovsep-Emin St, EIF Entrance, 0051 Yerevan, Armenia

autor

Knyazyan T.

• National Instruments AM LLC, 123 Hovsep-Emin St, EIF Entrance, 0051 Yerevan, Armenia

autor

Hovhannisyan T.

• National Instruments AM LLC, 123 Hovsep-Emin St, EIF Entrance, 0051 Yerevan, Armenia

autor

Mardoyan G.

• National Instruments AM LLC, 123 Hovsep-Emin St, EIF Entrance, 0051 Yerevan, Armenia

autor

Marciniak M.

• National Institute of Telecommunications, Warsaw, Poland

autor

Benson T.

• George Green Institute for Electromagnetics Research, Faculty of Engineering, University of Nottingham, University Park, Nottingham NG7 2RD, UK

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