Carrier concentration and in-plane mobility in both non-intentionally and Si-doped InAsSb and InAs/InAsSb type-II superlattice materials for space-based infrared detectors

• Autorzy: Morath Christian P. , Casias Lilian K. , Umana-Membreno Gilberto A. , Webster Preston T. , Grant Perry C. , Maestas Diana , Cowan Vincent M. , Faraone Lorenzo , Krishna Sanjay , Balakrishnan Ganesh

Identyfikatory

DOI

10.24425/opelre.2023.144554

• Konferencja: Quantum Structure Infrared Photodetectors - QSIP : International Conference 2020/2022 (11 ; 2022 ; Kraków, Poland)
• Języki publikacji: EN

Abstrakty

EN

The sensitivity of III-V-based infrared detectors is critically dependent upon the carrier concentration and mobility of the absorber layer, and thus, accurate knowledge of each is required to design structures for maximum detector performance. Here, measurements of the bulk in-plane resistivity, in-plane mobility, and carrier concentration as a function of temperature are reported for non-intentionally doped and Si-doped mid-wave infrared InAs₀.₉₁Sb₀.₀₉ alloy and InAs/InAs₀.₆₅Sb₀.₃₅ type-II superlattice materials grown on GaSb substrates. Standard temperature- and magnetic-field-dependent resistivity and the Hall measurements on mesa samples in the van der Pauw configuration are performed, and multicarrier fitting and modelling are used to isolate transport of each carrier species. The results show that up to 5 carrier species of the surface, interface and bulk variety contribute to conduction, with bulk electron and hole mobility up to 2·10⁵ cm²/V s and 8·10³ cm²/V s, respectively and background dopant concentration levels were between 10¹⁴ and 10¹⁵ cm¯³. The in-plane mobility temperatures dependence is determined and trends of each carrier species with temperature and dose are analysed.

Słowa kluczowe

EN

III-V infrared detectors; Bulk InAsSb; InAsSb/InAs superlattice; mobility; carrier concentration

• Wydawca: Stowarzyszenie Elektryków Polskich ; Polska Akademia Nauk ; Wojskowa Akademia Techniczna im. Jarosława Dąbrowskiego
• Czasopismo: Opto-Electronics Review
• Rocznik: 2023
• Tom: Vol. 31, Special Issue
• Strony: art. no. e144554
• Opis fizyczny: Bibliogr. 29 poz., rys., tab., wykr.

Twórcy

autor

Morath Christian P.

• U.S. Air Force Research Lab Space Vehicles Directorate, 3550 Kirtland AFB, 427 Aberdeen Ave., NM 87117, USA

• https://orcid.org/0000-0001-5838-9301

autor

Casias Lilian K.

• Sandia National Laboratories, 1515 Eubank Blvd. SE, Albuquerque, NM 87185, USA
• Center for High Technology Materials, University of New Mexico, 1313 Goddard St. SE, Albuquerque, NM 87106, USA

• https://orcid.org/0000-0002-4749-5085

autor

Umana-Membreno Gilberto A.

• School of Electrical, Electronic, and Computer Engineering, The University of Western Australia, 25 Fairway, Crawley WA 6009, Australia

• https://orcid.org/0000-0002-2169-0763

autor

Webster Preston T.

• U.S. Air Force Research Lab Space Vehicles Directorate, 3550 Kirtland AFB, 427 Aberdeen Ave., NM 87117, USA

autor

Grant Perry C.

• U.S. Air Force Research Lab Space Vehicles Directorate, 3550 Kirtland AFB, 427 Aberdeen Ave., NM 87117, USA

• https://orcid.org/0000-0003-2617-5231

autor

Maestas Diana

• U.S. Air Force Research Lab Space Vehicles Directorate, 3550 Kirtland AFB, 427 Aberdeen Ave., NM 87117, USA

autor

Cowan Vincent M.

• U.S. Air Force Research Lab Space Vehicles Directorate, 3550 Kirtland AFB, 427 Aberdeen Ave., NM 87117, USA

• https://orcid.org/0000-0002-5898-3156

autor

Faraone Lorenzo

• School of Electrical, Electronic, and Computer Engineering, The University of Western Australia, 25 Fairway, Crawley WA 6009, Australia

• https://orcid.org/0000-0002-3087-7079

autor

Krishna Sanjay

• Department of Electrical Engineering, The Ohio State University, 2015 Neil Ave., Columbus, OH 43210, USA

• https://orcid.org/0000-0002-3889-4893

autor

Balakrishnan Ganesh

• Center for High Technology Materials, University of New Mexico, 1313 Goddard St. SE, Albuquerque, NM 87106, USA

• https://orcid.org/0000-0002-9073-3739

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Uwagi

Opracowanie rekordu ze środków MEiN, umowa nr SONP/SP/546092/2022 w ramach programu "Społeczna odpowiedzialność nauki" - moduł: Popularyzacja nauki i promocja sportu (2022-2023).