The growth and characterisation of type I GaSb/AlSb superlattice with a thin GaSb layer

• Autorzy: Fokt Maciej , Jasik Agata , Sankowska Iwona , Mączko Herbert S. , Paradowska Karolina M. , Czuba Krzysztof

Identyfikatory

DOI

10.24425/opelre.2023.147912

• Języki publikacji: EN

Abstrakty

EN

This paper presents results of the characterisation of type I GaSb/AlSb superlattices (SLs) with a thin GaSb layer and varying thicknesses of an AlSb layer. Nextnano software was utilized to obtain spectral dependence of absorption and energy band structure. A superlattice (SL) with an energy bandgap of ~ 1.0 eV and reduced mismatch value was selected for experimental investigation. SLs with single (sample A) and double (sample B) AlSb barriers and a single AlSb layer (sample C) were fabricated using molecular beam epitaxy (MBE). Optical microscopy, high-resolution X-ray diffractometry, and photoluminescence were utilized for structural and optical characterisation. The presence of satellite and interference peaks in diffraction curves confirms the high crystal quality of superlattices. Photoluminescence signal associated with the superlattice was observed only for sample B and contained three low-intensity peaks: 1.03, 1.18, and 1.25 eV. The first peak was identified as the value of the energy bandgap of the SL. Other two peaks are related to optical transitions between defect states located at the interface between the SL and the top AlSb barrier. The time-dependent changes observed in the spectral characteristics are due to a modification of the SL/AlSb interface caused by the oxidation and hydroxylation of the AlSb layer.

Słowa kluczowe

EN

type I AlSb/GaSb superlattice; 8-band k·p perturbation theory; nextnano simulations; AlSb layer degradation

• Wydawca: Stowarzyszenie Elektryków Polskich ; Polska Akademia Nauk ; Wojskowa Akademia Techniczna im. Jarosława Dąbrowskiego
• Czasopismo: Opto-Electronics Review
• Rocznik: 2023
• Tom: Vol. 31, No. 4
• Strony: art. no. e147912
• Opis fizyczny: Bibliogr. 31 poz., rys., tab., wykr.

Twórcy

autor

Fokt Maciej

• Łukasiewicz Research Network - Institute of Microelectronics and Photonics, Aleja Lotników 32/46, 02-668 Warsaw, Poland
• Warsaw University of Technology, ul. Nowowiejska 15/19, 00-665 Warsaw, Poland

• https://orcid.org/0000-0002-3545-4198

autor

Jasik Agata

• Łukasiewicz Research Network - Institute of Microelectronics and Photonics, Aleja Lotników 32/46, 02-668 Warsaw, Poland

• https://orcid.org/0000-0003-4051-499X

autor

Sankowska Iwona

• Łukasiewicz Research Network - Institute of Microelectronics and Photonics, Aleja Lotników 32/46, 02-668 Warsaw, Poland

• https://orcid.org/0000-0003-3122-4026

autor

Mączko Herbert S.

• nextnano GmbH, Konrad-Zuse-Platz 8, 81829 München, Germany

• https://orcid.org/0000-0002-5417-6904

autor

Paradowska Karolina M.

• Łukasiewicz Research Network - Institute of Microelectronics and Photonics, Aleja Lotników 32/46, 02-668 Warsaw, Poland

• https://orcid.org/0000-0001-8724-6844

autor

Czuba Krzysztof

• Łukasiewicz Research Network - Institute of Microelectronics and Photonics, Aleja Lotników 32/46, 02-668 Warsaw, Poland
• Warsaw University of Technology, ul. Nowowiejska 15/19, 00-665 Warsaw, Poland

• https://orcid.org/0000-0002-6704-7810

Bibliografia

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Uwagi

1. Opracowanie rekordu ze środków MEiN, umowa nr SONP/SP/546092/2022 w ramach programu "Społeczna odpowiedzialność nauki" - moduł: Popularyzacja nauki i promocja sportu (2022-2023).

2. The research was carried out as part of the “Implementation Doctorate” program of the Ministry of Education and Science in Poland, project no. DWD/6/0216/2022, and partially funded by the National Center for Research and Development (NCBR) from the project TECHMATSTRATEG-III/0038/2019-00.