Optimizing SiGe-on-annealed DPSi heterostructures using raman spectroscopy and genetic algorithm for enhanced material characterization and performance

• Autorzy: Gouder Soraya , Yousfi Laatra , Guiza Dhaouadi , Mahamdi Ramdane , Berbezier Isabelle

Identyfikatory

DOI

10.15199/48.2024.04.31

Warianty tytułu

PL

Optymalizacja heterostruktur DPSi wyżarzonych SiGe przy użyciu spektroskopii Ramana i algorytmu genetycznego w celu uzyskania lepszej charakterystyki i wydajności materiałów

• Języki publikacji: EN

Abstrakty

EN

In our preceding investigation, we delved into the intricacies of SiGe alloys on double porous silicon (DPSi) through Raman spectroscopy, uncovering previously unknown connections between Raman peak shifts, stresses, and the concentration of Ge in the SiGe alloys in porous materials.A standout feature of this study lies in its distinct approach — a comparison of results employing a genetic algorithm. This method offers a comprehensive analysis of the data, enhancing our understanding of the intricate relationships at play. Validated through the frequency method, our results yield valuable insights into epitaxial growth on DPSi, presenting a nuanced perspective on the intricate interplay between Raman spectroscopy, stress, and alloy composition. These findings not only contribute to the evolving understanding of SiGe alloys but also pave the way for further advancements in the field of epitaxial growth on innovative substrates like DPSi.

PL

W naszym poprzednim badaniu zagłębiliśmy się w zawiłości stopów SiGe na podwójnie porowatym krzemie (DPSi) za pomocą spektroskopii Ramana, odkrywając nieznane wcześniej powiązania między przesunięciami pików Ramana, naprężeniami i stężeniem Ge w stopach SiGe w materiałach porowatych. Cechą tego badania jest odrębność podejścia — porównanie wyników z wykorzystaniem algorytmu genetycznego. Metoda ta umożliwia wszechstronną analizę danych, co pozwala lepiej zrozumieć złożone zależności. Nasze wyniki, potwierdzone metodą częstotliwości, dostarczają cennych informacji na temat wzrostu epitaksjalnego na DPSi, prezentując zniuansowaną perspektywę na skomplikowane wzajemne oddziaływanie między spektroskopią Ramana, naprężeniem i składem stopu. Odkrycia te nie tylko przyczyniają się do lepszego zrozumienia stopów SiGe, ale także torują drogę do dalszych postępów w dziedzinie wzrostu epitaksjalnego na innowacyjnych podłożach, takich jak DPSi.

Słowa kluczowe

EN

double porous silicon; raman spectroscopy; genetic algorithm

PL

krzem podwójnie porowaty; spektroskopia ramanowska; algorytm genetyczny

• Wydawca: Wydawnictwo SIGMA-NOT
• Czasopismo: Przegląd Elektrotechniczny
• Rocznik: 2024
• Tom: R. 100, nr 4
• Strony: 165--170
• Opis fizyczny: Bivliogr. 24 poz., rys., tab.

Twórcy

autor

Gouder Soraya

• Echahid Cheikh Larbi Tebessi University, Algeria

autor

Yousfi Laatra

• Echahid Cheikh Larbi Tebessi University, Algeria

autor

Guiza Dhaouadi

• Echahid Cheikh Larbi Tebessi University, Algeria

autor

Mahamdi Ramdane

• niversity Mostefa Ben Boulaid-Batna 2, Algeria

autor

Berbezier Isabelle

• Aix Marseille University, France

Bibliografia

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Uwagi

Opracowanie rekordu ze środków MNiSW, umowa nr POPUL/SP/0154/2024/02 w ramach programu "Społeczna odpowiedzialność nauki II" - moduł: Popularyzacja nauki i promocja sportu (2025).