Conducted EMI performance comparison of Si and SiC MOSFETS in a CCM boost PFC converter for MIL-STD-461F CE102

• Autorzy: Kavak H. , Iskender I. , Jahi A.

Identyfikatory

DOI

10.21008/j.1897-0737.2018.95.0009

• Konferencja: Computer Applications in Electrical Engineering (23-24.04.2018 ; Poznań, Polska)
• Języki publikacji: EN

Abstrakty

EN

This paper presents a comparison of conducted EMI performance of Si and SiC MOSFETs in a CCM PFC boost converter that is designed to meet CE102 of MIL-STD- 461F. EMI performance comparison is based on MOSFET of the PFC converter. That is, the power switch of the converter is the only parameter that is changed during tests. The boost diode is kept the same during the tests and the type of the boost diode is SiC. The paper shows the CE102 test results of Si and SiC MOSFETs without an EMI filter at the input side of CCM PFC boost converter.

Słowa kluczowe

EN

CCM Boost converter; silicon; silicon carbide; conducted EMI; CE102

• Wydawca: Wydawnictwo Politechniki Poznańskiej
• Czasopismo: Poznan University of Technology Academic Journals. Electrical Engineering
• Rocznik: 2018
• Tom: No. 95
• Strony: 87--94
• Opis fizyczny: Bibliogr. 7 poz., rys., tab.

Twórcy

autor

Kavak H.

• ASELSAN Inc.

autor

Iskender I.

• Çankaya University

autor

Jahi A.

• Gazi University

Bibliografia

• [1] Albanna A., Malburg A., Anwar M., Guta A., Tiwari N., Performance Comparison and Device Analysis Between Si IGBT and SiC MOSFET, Transportation Electrification Conference and Expo (ITEC), IEE, 2016.
• [2] Fujihira T., Fujishima N., Kimura H. and et al., Impact of SiC on Power Supplies and Drives to Save Energy and Materials, PCIM Asia 2017, 27 – 29 June 2017, Shanghai, China.
• [3] Kostov K., Rabkowski J., Nee H.P., Conducted EMI from SiC BJT Boost Converter and its Dependence on the Output Voltage, Current, and Heatsink Connection, ECCE Asia Downunder (ECCE Asia), IEE, 2013.
• [4] Stevanovic L.D., Matocha K.S., et al., Recent Advances in Silicon Carbide MOSFET Power Devices, Applied Power Electronics Conference and Exposition (APEC), Twenty-Fifth Annual IEE, 2010.
• [5] Franco P.B., Sendra J.B., EMI comparison between Si and SiC technology in a boost converter, Electromagnetic Compatibility International Symposium(EMC EUROPE), 2012.
• [6] 600 V CoolMOSTM C6 Power Transistor IPW60R041C6 Datasheet, Rev.2.1, 2010-07-12.
• [7] CMF20120D-Silicon Carbide Power MOSFET, CMF20120D Rev. D.