The sensibility of resistance sensor structures with graphene to the action of selected gaseous media

• Autorzy: Pustelny T. , Setkiewicz M. , Drewniak S. , Maciak E. , Stolarczyk A. , Urbańczyk M. , Procek M. , Gut K. , Opilski Z. , Pasternak I. , Strupinski W.
• Języki publikacji: EN

Abstrakty

EN

The paper presents resistance sensor structures with a graphene sensing layer. The structures were tested concerning their sensitivity to the affects of hydrogen, nitrogen dioxide and steam in an atmosphere of a synthetic air. Investigations have proved that resistance structures with a graphene layer are sensitive to the presence of the tested gases. The resistance of the structures amounted to about 10Ω, whereas changes in the resistances affected by the external gaseous medium were contained within the range of a several mΩ. The investigations confirmed that the resistance structures with graphene exposed to the affect of hydrogen in atmosphere of synthetic air change their resistances practically at once (within the order of only a few seconds). This indicates that such structures might be practically applied in sensors of hydrogen ensuring a short time of response.

Słowa kluczowe

EN

graphene; resistance; sensor; hydrogen sensor; nitrogen dioxide sensor

• Wydawca: Polska Akademia Nauk, Wydział IV Nauk Technicznych
• Czasopismo: Bulletin of the Polish Academy of Sciences. Technical Sciences
• Rocznik: 2013
• Tom: Vol. 61, nr 2
• Strony: 293--300
• Opis fizyczny: Bibliogr. 20 poz., rys., wykr.

Twórcy

autor

Pustelny T.

• Department of Optoelectronics, Silesian University of Technology, 2 Akademicka St., 44-100 Gliwice, Poland

autor

Setkiewicz M.

• Department of Optoelectronics, Silesian University of Technology, 2 Akademicka St., 44-100 Gliwice, Poland

autor

Drewniak S.

• Department of Optoelectronics, Silesian University of Technology, 2 Akademicka St., 44-100 Gliwice, Poland

autor

Maciak E.

• Department of Optoelectronics, Silesian University of Technology, 2 Akademicka St., 44-100 Gliwice, Poland

autor

Stolarczyk A.

• Department of Physical Chemistry and Technology of Polymers, Silesian University of Technology, 9 Strzody St., 44-100 Gliwice, Poland

autor

Urbańczyk M.

• Department of Optoelectronics, Silesian University of Technology, 2 Akademicka St., 44-100 Gliwice, Poland

autor

Procek M.

• Department of Optoelectronics, Silesian University of Technology, 2 Akademicka St., 44-100 Gliwice, Poland

autor

Gut K.

• Department of Optoelectronics, Silesian University of Technology, 2 Akademicka St., 44-100 Gliwice, Poland

autor

Opilski Z.

• Department of Optoelectronics, Silesian University of Technology, 2 Akademicka St., 44-100 Gliwice, Poland

autor

Pasternak I.

• Institute of Electronic Materials Technology, 133 Wólczanska St., 01-919 Warsaw, Poland

autor

Strupinski W.

• Institute of Electronic Materials Technology, 133 Wólczanska St., 01-919 Warsaw, Poland

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