Ion etching of HgCdTe : properties, patterns and use as a method for defect studies

• Autorzy: Izhnin I. I. , Mynbaev K. D. , Voitsekhovskii A. V. , Korotaev A. G. , Fitsych O. I. , Pociask-Bialy M.

Identyfikatory

DOI

10.1016/j.opelre.2017.03.007

• Języki publikacji: EN

Abstrakty

EN

Analysis is performed of the contemporary views on the effect of ion etching (ion-beam milling and reactive ion etching) on physical properties of HgCdTe and on the mechanisms of the processes responsible for modification of these properties under the etching. Possibilities are discussed that ion etching opens for defect studies in HgCdTe, including detecting electrically neutral tellurium nanocomplexes, determining background donor concentration in the material of various origins, and understanding the mechanism of arsenic incorporation in molecular-beam epitaxy-grown films.

Słowa kluczowe

EN

HgCdTe; ion etching; photodetectors; defects; doping

• Wydawca: Stowarzyszenie Elektryków Polskich ; Polska Akademia Nauk ; Wojskowa Akademia Techniczna im. Jarosława Dąbrowskiego
• Czasopismo: Opto-Electronics Review
• Rocznik: 2017
• Tom: Vol. 25, No. 2
• Strony: 148--170
• Opis fizyczny: Bibliogr. 99 poz., il., tab., wykr.

Twórcy

autor

Izhnin I. I.

• Scientific Research Company "Carat", Lviv 79031, Ukraine
• National Research Tomsk State University, Tomsk 634050, Russia

autor

Mynbaev K. D.

• Ioffe Institute, St.-Petersburg 194021, Russia
• ITMO University, St.-Petersburg 197101, Russia

autor

Voitsekhovskii A. V.

• National Research Tomsk State University, Tomsk 634050, Russia

autor

Korotaev A. G.

• National Research Tomsk State University, Tomsk 634050, Russia

autor

Fitsych O. I.

• P. Sahaydachnyi National Army Academy, Lviv 79012, Ukraine

autor

Pociask-Bialy M.

• Center for Microelectronics and Nanotechnology of the University of Rzeszow, Rzeszow 35-310, Poland

Bibliografia

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Opracowanie ze środków MNiSW w ramach umowy 812/P-DUN/2016 na działalność upowszechniającą naukę (zadania 2017)