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Acoustic emission of monolithic IGBT transistors

Treść / Zawartość
Identyfikatory
Warianty tytułu
Języki publikacji
EN
Abstrakty
EN
Due to the increasing number of applications of power semiconductor devices, more and more attention is being paid to diagnostic methods to determine the condition of working semiconductor components. On the basis of the results of experimental research, a correlation can be observed between the transition between the on/off states of a single IGBT transistor in operation and the acoustic signal emitted by it. Acquisition of acoustic emission signals was obtained using a specialized sensor from Vallen. To record the received signal, a high resolution digital oscilloscope was used, which exported the recorded signal to a file, which enabled further digital processing of the acquired signals. The aim of the study was to determine the usefulness of acoustic emission detection methods to determine the possibility of damage to an element based on the recorded acoustic signal.
Rocznik
Strony
755--760
Opis fizyczny
Bibliogr. 8 poz., rys.
Twórcy
autor
  • Maritime University of Szczecin, Poland
autor
  • Maritime University of Szczecin, Poland
autor
  • Maritime University of Szczecin, Poland
Bibliografia
  • 1. Yeke, L., Dawei X., Yifan, F., (2016) Prognosis of Chip-loss Failure in High-power IGBT Module by Self-testing, Department of Electrical Engineering Tongji University Shanghai, China, 2016 IEEE
  • 2. Kozak, M., Gordon, R., Bejger, A., (2016) Control of squirrel-cage electric generators in a parallel intermediate DC circuit connection, Zeszyty Naukowe, Akademia Morska w Szczecinie, 2016, nr 45 (117) s. 17-22 ISSN1733-8670
  • 3. Wang B., Wang X., Wang X., Shao C., Liu, S. (2016) Reliability evaluation of voltage-source converter-based multi-terminal direct current integrated offshore wind plants,Department of Electrical Engineering and State Key Laboratory on Electrical Insulation and Power Equipment, Xi’an Jiaotong University, IET Renew. Power Gener., 2016, Vol. 10, Iss. 6, pp. 761-766,
  • 4. Zhu P., Liu, Y., Roesner R., Hao X., (2011) Offshore Wind Converter Reliability Evaluation, 8th International Conference on Power Electronics - ECCE Asia May 30-June 3, 2011, The Shilla Jeju, Korea pp. 966-971
  • 5. Zhou S.,Zhou L., Sun, P., (2013) Monitoring Potential Defects in an IGBT Module Based on Dynamic Changes of the Gate Current IEEE TRANSACTIONS ON POWER ELECTRONICS, Vol. 28, no. 3, March 2013
  • 6. AE- Sensor Overview, Vallen-Systeme GmbH data sheet.
  • 7. Kärkkäinen, T., (2015) OBSERVATIONS OF ACOUSTIC EMISSION IN POWER SEMICONDUCTORS, Lappeenrannan teknillinen yliopisto Yliopistopaino 2015, ISBN 978- 952-265-912-5 (PDF)
  • 8. Kärkkäinen T., Talvitie, J.P., Kuisma M., Hannonen, J.,Strom, U., Mengotti E., Silventoinen, (2014) P., Acoustic Emission in Power Semiconductor Modules-First Observations, IEEE TRANSACTIONS ON POWER ELECTRONICS, VOL. 29, NO. 11, NOV. 2014
Typ dokumentu
Bibliografia
Identyfikator YADDA
bwmeta1.element.baztech-95fe9782-b3fe-4edd-9e8c-9ae1e6b47a2e
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