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Kompleksowe podejście do badań parametrów dynamicznych szybko przełączających modułów tranzystorowych SiC MOSFET
Języki publikacji
Abstrakty
The article describes a comprehensive approach to dynamic performance determination tests of SiC MOSFET power modules. Experimental verification was performed using ultra-fast switching (1,2 kV, 495 A) module from Microsemi. The obtained results are compared to results acquired by measurements performed with compliance to a commonly-used standard that does not consider phenomena that significantly impact switching processes of fast-switching SiC MOSFET power modules.
W artykule przedstawiono metodykę badań parametrów dynamicznych modułów tranzystorowych nowej generacji bazujących na tranzystorach MOSFET z węglika krzemu (SiC). Przeprowadzono badania eksperymentalne dla bardzo szybko przełączającego modułu tranzystorowego firmy Microsemi (1,2 kV, 495 A). Otrzymane wyniki porównano z wynikami uzyskanymi na podstawie powszechnie wykorzystywanego standardu wyznaczania parametrów dynamicznych tranzystorów MOSFET, który nie uwzględnia szeregu zjawisk znacząco wpływających na procesy łączeniowe szybko przełączających tranzystorów SiC MOSFET.
Wydawca
Czasopismo
Rocznik
Tom
Strony
190--195
Opis fizyczny
Bibliogr. 21 poz., rys.
Twórcy
autor
- Medcom Company, Jutrzenki 78A, 02-230 Warsaw
autor
- Warsaw University of Technology, Institute of Control and Industrial Electronics, Koszykowa 75, 00-662 Warsaw
Bibliografia
- [1] She X., Losee P., Hu H., Earls W., Datta R., Performance Evaluation of 1.5 kV Solar Inverter With 2.5 kV Silicon Carbidemosfet, IEEE Transactions on Industry Applications, vol. 55 (2019), no. 6, 7726-7735
- [2] Li H., Wang S., Zhang Z., Tang J., Ren X., and Chen Q., A SiC bidirectional LLC On-board charger, Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC, vol. 2019-March IEEE, 3353–3360
- [3] Helsper M., Ocklenburg M., SiC MOSFET Based Auxiliary Power Supply for Rail Vehicles, 20th European Conference on Power Electronics and Applications (EPE'18 ECCE Europe), 2018, 1-8
- [4] Shepard P., 175 kVA SiC Converters in the New Dragon 2 Locomotive, 2018, [Online]. Available: https://eepower.com/news/175kva-sic-converters-in-the-new-dragon-2-locomotive/ (Accessed 2022-07-21)
- [5] Lindahl M., Velander E., Johansson M. H., Blomberg A., NeeH., Silicon Carbide MOSFET Traction Inverter Operated in the Stockholm Metro System Demonstrating Customer Values, 2018 IEEE Vehicle Power and Propulsion Conference (VPPC),2018, 1-6
- [6] Biliński J., The latest generation drive for electric buses powered by SiC technology for high energy efficiency, MATEC Web of Conferences, vol. 180 (2018)
- [7] Elena B., Véronique L. T., STMicroelectronics SiC Module in Tesla Model 3 Inverter, 2018, 1–21, [Online]. Available: http://www.oic.co.kr/files/sample_STM_SiC_Module_Tesla_Model_3_Inverter.pdf (Accessed 2022-07-21).
- [8] Yang Y., Dorn-Gomba L., Rodriguez R., Mak C., and Emadi A., Automotive Power Module Packaging: Current Status and Future Trends, IEEE Access, vol. 8 (2020), 160126–160144
- [9] Maleki M., Mesemanolis A., Santolaria L., Ruiz A., Keller T., High Power Density SiC Power Module for Formula E: Requirement, Design Considerations and the Test Results, PCIM Europe digital days 2021; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, 2021, 1-7
- [10] Zięba D., Rąbkowski J., Problems related to the correct determination of switching power losses in high-speed SiC MOSFET power modules, Bulletin of the Polish Academy of Sciences: Technical Sciences, vol.70 (2022), no.2
- [11] Zeng Z., Wang J., Wang L., Yu Y., Ou K., Inaccurate Switching Loss Measurement of SiC MOSFET Caused by Probes: Modelization, Characterization, and Validation, IEEE Transactions on Instrumentation and Measurement, vol. 70 (2021), 1–14
- [12] IEC 60747-8:2010, Semiconductor devices - Discrete devices - Part 8: Field-effect transistors
- [13] Li X., Zhang L., Guo S., Lei Y., Huang A. Q., Zhang B., Understanding switching losses in SiC MOSFET: Toward lossless switching, WiPDA 2015 - 3rd IEEE Workshop on Wide Bandgap Power Devices and Applications, IEEE, 2015, 257–262
- [14] Microchip Microsemi MSCSM120AM042CT6LIAG SiC MOSFET power module datasheet, Online. Available: https://www.microchip.com/enus/product/MSCSM120AM042CT6LIAG-Module.pdf (Accessed 2022-07-21)
- [15] Wang N., Zhang J., Nonlinear Capacitance Model of SiC MOSFET Considering Envelope of Switching Trajectory, IEEE Transactions on Power Electronics, vol. 37 (2022), no. 7, 7977-7988
- [16] Xiong Y., Sun Y., Jia H., Shea P., John Shen Z., New physical insights on power MOSFET switching losses, IEEE Transactions on Power Electronics, vol. 24 (2009), no. 2, 525–531
- [17] IEC 60747-15:2012, Semiconductor devices - Discrete devices - Part 15: Isolated power semiconductor devices
- [18] Wang Z., Yuan Z., Zhao Y., Parasitic Inductances Extraction for SiC Power Modules Using An Enhanced Two-Port S-Parameter Approach, 2021 IEEE Applied Power Electronics Conference and Exposition (APEC), 2021, 2420-2426
- [19] Zimmermann M., Holzinger B., Takeda R., Arai T., Using the Calorimetric Method to Verify Dynamic Power Device Analyzer Switching Energy Calculations, Bodo´s Power Systems, October 2021, 46-48
- [20] Junji K., Zhibin Z., Zongkui X., Changjun W., Xiang C., Analysis of Switching Clamped Oscillations of SiC MOSFETs, Journal of Power Electronics, vol. 18 (2018), no. 3, 892-901
- [21] Unger C., Pfost M., Determination of the Transient Threshold Voltage Hysteresis in SiC MOSFETs after Positive and Negative Gate Bias, 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD), vol. 2019-May. IEEE, 195–198
Typ dokumentu
Bibliografia
Identyfikator YADDA
bwmeta1.element.baztech-952c1444-1401-44b5-ab10-9d920f5761fd