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Tytuł artykułu

Investigation, analysis and comparison of current-voltage characteristics for Au/Ni/GaN Schottky structure using I-V-T simulation

Identyfikatory
Warianty tytułu
Języki publikacji
EN
Abstrakty
EN
In this work, we have presented a theoretical study of Au/Ni/GaN Schottky diode based on current-voltage (I-V) measurement for temperature range of 120 K to 400 K. The electrical parameters of Au/Ni/GaN, such as barrier height (Φb), ideality factor and series resistance have been calculated employing the conventional current-voltage (I-V), Cheung and Chattopadhyay method. Also, the variation of Gaussian distribution (P (Φb)) as a function of barrier height (Φb) has been studied. Therefore, the modified [formula] relation has been extracted from (I-V) characteristics, where the values of ΦB0 and A+Simul have been found in different temperature ranges. The obtained results have been compared to the existing experimental data and a good agreement was found.
Wydawca
Rocznik
Strony
496--502
Opis fizyczny
Bibliogr. 30 poz., tab., rys.
Twórcy
autor
  • Laboratoire de Micro-Electronique Appliquée, Université Djillali Liables de Sidi Bel Abbes, BP 89, 22000 Sidi Bel Abbes, Algeria
autor
  • Laboratoire de Micro-Electronique Appliquée, Université Djillali Liables de Sidi Bel Abbes, BP 89, 22000 Sidi Bel Abbes, Algeria
autor
  • Laboratoire de Micro-Electronique Appliquée, Université Djillali Liables de Sidi Bel Abbes, BP 89, 22000 Sidi Bel Abbes, Algeria
autor
  • University of El Oued, Fac. Technology, Department of electrical engineering, 39000 El Oued, Algeria
autor
  • University of El Oued, Fac. Technology, Department of electrical engineering, 39000 El Oued, Algeria
autor
  • Laboratoire de Micro-Electronique Appliquée, Université Djillali Liables de Sidi Bel Abbes, BP 89, 22000 Sidi Bel Abbes, Algeria
Bibliografia
  • [1] LAKHDAR N., DJEFFAL F., DIBI Z., AIP Conf. Proc., 1292 (2010), 173.
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Typ dokumentu
Bibliografia
Identyfikator YADDA
bwmeta1.element.baztech-94e62393-0dd8-4dff-a225-93e6198296be
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