Investigation, analysis and comparison of current-voltage characteristics for Au/Ni/GaN Schottky structure using I-V-T simulation

• Autorzy: Sadoun A. , Mansouri S. , Chellali M. , Lakhdar N. , Hima A. , Benamara Z.

Identyfikatory

DOI

10.2478/msp-2019-0041

• Języki publikacji: EN

Abstrakty

EN

In this work, we have presented a theoretical study of Au/Ni/GaN Schottky diode based on current-voltage (I-V) measurement for temperature range of 120 K to 400 K. The electrical parameters of Au/Ni/GaN, such as barrier height (Φb), ideality factor and series resistance have been calculated employing the conventional current-voltage (I-V), Cheung and Chattopadhyay method. Also, the variation of Gaussian distribution (P (Φb)) as a function of barrier height (Φb) has been studied. Therefore, the modified [formula] relation has been extracted from (I-V) characteristics, where the values of ΦB0 and A⁺_Simul have been found in different temperature ranges. The obtained results have been compared to the existing experimental data and a good agreement was found.

Słowa kluczowe

EN

Schottky diode; Au/Ni/n-GaN; temperature effects; I-V characteristics; Cheung method; Chattopadhyay method; SILVACO-TCAD

• Wydawca: De Gruyter
• Czasopismo: Materials Science Poland
• Rocznik: 2019
• Tom: Vol. 37, No. 3
• Strony: 496--502
• Opis fizyczny: Bibliogr. 30 poz., tab., rys.

Twórcy

autor

Sadoun A.

• Laboratoire de Micro-Electronique Appliquée, Université Djillali Liables de Sidi Bel Abbes, BP 89, 22000 Sidi Bel Abbes, Algeria

autor

Mansouri S.

• Laboratoire de Micro-Electronique Appliquée, Université Djillali Liables de Sidi Bel Abbes, BP 89, 22000 Sidi Bel Abbes, Algeria

autor

Chellali M.

• Laboratoire de Micro-Electronique Appliquée, Université Djillali Liables de Sidi Bel Abbes, BP 89, 22000 Sidi Bel Abbes, Algeria

autor

Lakhdar N.

• University of El Oued, Fac. Technology, Department of electrical engineering, 39000 El Oued, Algeria

autor

Hima A.

• University of El Oued, Fac. Technology, Department of electrical engineering, 39000 El Oued, Algeria

autor

Benamara Z.

• Laboratoire de Micro-Electronique Appliquée, Université Djillali Liables de Sidi Bel Abbes, BP 89, 22000 Sidi Bel Abbes, Algeria

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