Enhancement in NBE emission and optical band gap by Al doping in nanocrystalline ZnO thin films

• Autorzy: Kumar N. , Srivastava A.

Identyfikatory

DOI

10.1016/j.opelre.2017.11.001

• Języki publikacji: EN

Abstrakty

EN

Transparent Al doped ZnO nanocrystalline films with a crystallite size less than 19 nm are obtained by spray pyrolysis. Band gap increases monotonically from 3.16 to 3.31 eV with increasing aluminum dopant up to 1.56 at.% facilitating increasing width of a transmission window in addition to the band gap tuning of 4.74% which compares favorably well with literature. UV emission with continuously increasing intensity is obtained which reflects on the good crystalline quality of the films. Also the defect emissions are suppressed remarkably as the dopant Al concentration increases in ZnO. The band gap tuning by quite small increment in dopant amount makes the present films, much attractive for the fabrication of light emitting devices with a much sought-for benefit of large area fabrication. FESEM shows the surface is granular with grain size lying in the range of 20-35 nm and EDX confirms the presence of Al in the doped samples.

Słowa kluczowe

EN

Al doped ZnO; spray pyrolysis; band-gap; enhanced UV-emission; suppression of defect-emission

• Wydawca: Stowarzyszenie Elektryków Polskich ; Polska Akademia Nauk ; Wojskowa Akademia Techniczna im. Jarosława Dąbrowskiego
• Czasopismo: Opto-Electronics Review
• Rocznik: 2018
• Tom: Vol. 26, No. 1
• Strony: 1--10
• Opis fizyczny: Bibliogr. 71 poz., wykr.

Twórcy

autor

Kumar N.

• Department of Physics, University of Lucknow, Lucknow, 226007, India

autor

Srivastava A.

• Department of Physics, University of Lucknow, Lucknow, 226007, India

Bibliografia

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Uwagi

Opracowanie rekordu w ramach umowy 509/P-DUN/2018 ze środków MNiSW przeznaczonych na działalność upowszechniającą naukę (2018).