Optimised magnetron sputtering method for the deposition of indium tin oxide layers

• Autorzy: Musztyfaga-Staszuk Małgorzata , Pudiš Dušan , Socha Robert , Gawlińska-Nęcek Katarzyna , Panek Piotr

Identyfikatory

DOI

10.24425/bpasts.2021.139005

• Języki publikacji: EN

Abstrakty

EN

The article presents the method of magnetron sputtering for the deposition of conductive emitter coatings in semiconductor structures. The layers were applied to a silicon substrate. For optical investigations, borosilicate glasses were used. The obtained layers were subjected to both optical and electrical characterisation, as well as structural investigations. The layers on silicon substrates were tested with the four-point probe to find the dependence of resistivity on the layer thickness. The analysis of the elemental composition of the layer was conducted using a scanning electron microscope equipped with an EDS system. The morphology of the layers was examined with the atomic force microscope (AFM) of the scanning electron microscope (SEM) and the structures with the use of X-ray diffraction (XRD). The thickness of the manufactured layers was estimated by ellipsometry. The composition was controlled by selecting the target and the conditions of the application, i.e. the composition of the plasma atmosphere and the power of the magnetrons. Based on the obtained results, this article aims to investigate the influence of the manufacturing method and the selected process parameter on the optical properties of thin films, which should be characterised by the highest possible value of the transmission coefficient (>85–90%) and high electrical conductivity.

Słowa kluczowe

EN

In2O3; Sn2O; ITO; magnetron sputtering method

PL

In2O3; Sn2O; ITO; metoda rozpylania magnetronowego

• Wydawca: Polska Akademia Nauk, Wydział IV Nauk Technicznych
• Czasopismo: Bulletin of the Polish Academy of Sciences. Technical Sciences
• Rocznik: 2021
• Tom: Vol. 69, nr 6
• Strony: art. no. e139005
• Opis fizyczny: Bibliogr. 29 poz., fot., tab., wykr.

Twórcy

autor

Musztyfaga-Staszuk Małgorzata

• Silesian University of Technology, Welding Department, ul. Konarskiego 18A, 44-100 Gliwice, Poland

autor

Pudiš Dušan

• Faculty of Faculty of Electrical Engineering and Information Technology, Department of Physics, Zilina, Slovakia

autor

Socha Robert

• Institute of Catalysis and Surface Chemistry, Polish Academy of Sciences, ul. Niezapominajek 8, 30-239 Krakow, Poland

autor

Gawlińska-Nęcek Katarzyna

• Institute of Metallurgy and Materials Science PAS, ul. Reymonta 25, 30-059 Krakow, Poland

autor

Panek Piotr

• Institute of Metallurgy and Materials Science PAS, ul. Reymonta 25, 30-059 Krakow, Poland

Bibliografia

• [1] L. Żukowska, J. Mikuła, M. Staszuk, and M. Musztyfaga-Staszuk, “Structure And Properties Of PVD Coatings Deposited On Cermets,” Arch. Metall. Mater., vol. 60, no. 2, pp. 727–733, 2015, doi: 10.1515/amm-2015-0198.
• [2] M. Staszuk et al., “Investigations of TiO2, Ti/TiO2, and Ti/TiO2/Ti/TiO2 coatings produced by ALD and PVD methods on Mg-(Li)-Al-RE alloys substrates,” Bull. Pol. Acad. Sci. Tech. Sci., vol. 69, no. 5, p. 137549, 2021 (in print), doi: 10.24425/bpasts.2021.137549.
• [3] Y.-S. Cho, M. Han, and S. H. Woo, “Electrospinning of Antimony Doped Tin Oxide Nanoparticle Dispersion for Transparent and Conductive Films,” Arch. Metall. Mater., vol. 65, no. 4, pp. 1345–1350, 2020, doi: 10.24425/amm.2020.133697.
• [4] R.A. Maniyara, V.K. Mkhitaryan, T.L. Chen, D.S. Ghosh, and V. Pruneri, “An antireflection transparent conductor with ultralow optical loss (<2%) and electrical resistance,” Nat. Commun., vol. 7, pp. 13771, 2016, doi: 10.1038/ncomms13771.
• [5] M. Kuc et al., “ ITO layer as an optical confinement for nitride edge-emitting lasers,” Bull. Pol. Acad. Sci. Tech. Sci., vol. 68, no. 1, 2020, doi: 10.24425/bpasts.2020.131834.
• [6] Y. Cui and C.M. Lieber, “Functional Nanoscale Electronic Devices Assembled Using Silicon Nanowire Building Blocks,” Science, vol. 291, pp. 851–853, 2001, doi: 10.1126/science. 291.5505.851.
• [7] J. Kryłow, J. Oleński, Z. Sawicki, and A. Tumański, “Doping of semiconductors, Technological processes in semiconductor electronics,” Scientific and Technical Publishing House, Warsaw 1980 [in Polish].
• [8] Ş. Ţălu, S. Kulesza, M. Bramowicz, K. Stępień and D. Dastan, “Analysis of the Surface Microtexture of Sputtered Indium Tin Oxide Thin Films,” Arch. Metall. Mater., vol. 66, no. 2, pp. 443–450, 2021, doi: 10.24425/amm.2021.135877.
• [9] Y.S. Hsu and S.K. Gandhi, “The Effect of Phosphorus Doping on Tin Oxide Films Made by the Oxidation of Phosphine and Tetramethyltin II. Electrical Properties J. Electrochem. Soc. II,” Sol. State Sci. Technol., vol. 127, p. 1592, 1980.
• [10] T. Nakahara and H. Koda, Chemical Sensor Technology. Ed., N. Emazoe,” Elsevier, New York, 1991, vol. 3, p. 19.
• [11] S.-J. Hong, S.-H. Song, B.J. Kim, J.-Y. Lee, and Y.-S Kim, “ITO Nanoparticles Reused from ITO Scraps and Their Applications to Sputtering Target for Transparent Conductive Electrode Layer,” Nano Converg., vol. 4, no 23, p. 23, 2017.
• [12] Q. Li, E. Gao, and A.X. Wang, “Ultra-Compact and Broadband Electro-Absorption Modulator Using an Epsilon-near-Zero Conductive Oxide,” Photonics Res., vol. 6, no. 4, pp. 277–281, 2018, doi: 10.1364/PRJ.6.000277.
• [13] K. Ellmer, “Past Achievements and Future Challenges in the Development of Optically Transparent Electrodes,” Nat. Photonics, vol. 6, pp. 809–817, 2012, doi: 10.1038/nphoton.2012.282.
• [14] Q. Li et al., “3D ITO-Nanowire Networks as Transparent Electrode for All-Terrain Substrate,” Sci. Rep., vol. 9, no. 4983, 2019.
• [15] C. Guillén and J. Herrero, “Comparison study of ITO thin films deposited by sputtering at room temperature onto polymer and glass substrates,” Thin Solid Films, 480–481, pp. 129–132, 2005, doi: 10.1016/j.tsf.2004.11.040.
• [16] C. Guillén and J. Herrero, “Polycrystalline growth and recrystallisation process in sputtering ITO thin films,” Thin Solid Films, vol. 510, pp. 260–264, 2006.
• [17] H. Morikawa and M. Fujita, “Crystallisation and electrical property change on the annealing of amorphous indium-oxide and indium tin oxide films,” Thin Solid Films, vol. 359, pp. 61–67, 2000.
• [18] F. Kurdesau, G. Khripunov, A.F da Cunha, M Kaelin, and A.N Tiwari, “Comparative study of ITO layers deposited by DC and RF magnetron sputtering at room temperature,” J. Non-Crystall. Solids, vol. 352, pp. 1466–1470, 2006, doi: 10.1016/j.jnoncrysol. 2005.11.088.
• [19] C.L. Tien, H.Y. Lin, C.K. Chang, and C.J. Tang, “Effect of Oxygen Flow Rate on the Optical, Electrical, and Mechanical Properties of DC Sputtering ITO Thin Films,” Adv. Condens. Matter Phys., 2019, p. 2647282, 2019.
• [20] J. Txintxurreta, E. G-Berasategui, R. Ortiz, O. Hernández, L. Mendizábal, and J. Barriga, “Indium Tin Oxide Thin Film Deposition by Magnetron Sputtering at Room Temperature for the Manufacturing of Efficient Transparent Heaters,” Coatings, vol. 11, p. 92, 2021, doi: 10.3390/coatings11010092.
• [21] R.K. Tyagi, P. Saxena, A. Vashisth, and S. Mehndiratta, “PVD based thin film deposition methods and characterisation/ property of different compositional coatings- a critical analysis,” Materials Today: Proceedings 2nd International Conference, vol. 38, pp. 259–264, 2020.
• [22] P. Sawicka-Chudy et al., “Characteristics of TiO2, Cu2O, and TiO2/Cu2O thin films for application in PV devices, AIP Advances, vol. 9, p. 055206, 2019, doi: 10.1063/1.5093037.
• [23] B. Wicher et al., “Structure and Electrical Resistivity Dependence of Molybdenum Thin Films Deposited by DC Modulated Pulsed Magnetron Sputtering,” Arch. Metall. Mater., vol. 63, no. 3, pp. 1339–1344, 2018, doi: 10.24425/123809.
• [24] L.J. Meng, E. Liang, J. Gao, V. Teixeira, and M.P. dos Santos, “Study of indium tin oxide thin films deposited on acrylics substrates by ion beam assisted deposition technique,” J. Nanosci. Nanotechnol., vol. 9, pp. 4151–4155, 2009, doi: 10.1166/jnn.2009.m24.
• [25] J.C. Manifacier, M. De Murcia, J.P. Fillard, and E. Vicario, “Optical and electrical properties of SnO2 thin films in relation to their stoichiometric deviation and their crystalline structure,” Thin Solid Films, vol. 41, pp. 127–144, 1977.
• [26] M. Iftikhar, I.M. Ali, and M.A. Al-Jenabi, “Structural and Optical Properties of In2O3 and Indium Tin Oxide Thin Films,” J. Unive. Anbar Pure Sci., vol. 11, no.1, pp. 39–46, 2017.
• [27] H. Kim et al., “Electrical, optical, and structural properties of indium-tin-oxide thin films for organic light-emitting devices,” J. Appl. Phys., vol. 86, pp. 6451–6461, 1999, doi: 10.1063/1.371708.
• [28] N. Nosidlak, “Application of polymer systems as materials in photovoltaic cells and electroluminescent diodes”. PhD Thesis, Krakow 2013.
• [29] L.F.J. Piper et al., “In2O3 is found about 2.8 eV below the Fermi level,” Appl. Phys. Lett., vol. 94, p. 022105, 2009.

Uwagi

The article was published as part of a scholarship awarded by the International Visegrad Foundation for the submitted project number 520110061 by Eng. M. Musztyfaga-Staszuk, PhD, DSc.