Investigation of silicon nitride and DLC thin films hardness deposited with RF PECVD method

• Autorzy: Dominik M. , Śmietana M. , Król K.

Identyfikatory

DOI

10.15199/13.2015.11.8

Warianty tytułu

PL

Badanie twardości warstw azotku krzemu warstw diamentopodobnych osadzanych metodą RF PECVD

• Języki publikacji: EN

Abstrakty

EN

This paper presents the results of nanohardness measurements of silicon nitride (SiNx) and two types of diamond-like carbon films (DLC) deposited by radio-frequency plasma enhanced chemical vapor deposition (RF PECVD) method. In order to accurately determine hardness of SiNx and DLC films two approximation methods have been applied, where first includes an effect of the substrate (layer/substrate system), and the second takes into account an additional silicon dioxide (SiO2) interlayer (layer/SiO2/substrate system). In this work thickness and roughness of the films has also been investigated. The study has shown that the DLC films are slightly harder than SiNx films.

PL

Praca ta dotyczy badań twardości warstw azotku krzemu (SiNx) oraz warstw diamentopodobnych (DLC, ang, diamond-like carbon films) osadzanych metodą chemicznego osadzania z fazy lotnej wspomaganego plazmą. W celu dokładnego wyznaczenia twardości warstw SiNx i DLC zastosowano dwa rodzaje metod aproksymacji wyników pomiarów metodą nanoindentacji. Pierwsza z nich uwzględniała jedynie wpływ podłoża (warstwa/podłoże) natomiast w drugiej metodzie uwzględniono także wpływ dodatkowej warstwy SiO2 (tlenku krzemu) (warstwa/SiO2/podłoże). W niniejszej pracy badane były również grubość oraz chropowatość warstw. Badania wykazały, że warstwy DLC są nieco twardsze od warstw SiNx.

Słowa kluczowe

EN

silicon nitride; diamond-like carbon; nanoindentation; hardness; RF PECVD

PL

azotek krzemu; warstwa diamentopodobna; nanoindentacja; twardość; RF PECVD

• Wydawca: Wydawnictwo SIGMA-NOT
• Czasopismo: Elektronika : konstrukcje, technologie, zastosowania
• Rocznik: 2015
• Tom: Vol. 56, nr 11
• Strony: 35--38
• Opis fizyczny: Bibliogr. 22 poz., il., wykr.

Twórcy

autor

Dominik M.

• Warsaw University of Technology, Faculty of Electronics and Information Technology, Institute of Microelectronics and Optoelectronics

autor

Śmietana M.

• Warsaw University of Technology, Faculty of Electronics and Information Technology, Institute of Microelectronics and Optoelectronics

autor

Król K.

• Warsaw University of Technology, Faculty of Electronics and Information Technology, Institute of Microelectronics and Optoelectronics
• Tele & Radio Research Institute, Warsaw

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