Photofield emission from SiGe nanoislands under green light illumination

• Autorzy: Steblova O. , Evtukh A. , Yilmazoglu O. , Yukhymchuk V. , Hartnagel H. , Mimura H.

Identyfikatory

DOI

10.1016/j.opelre.2017.11.003

• Języki publikacji: EN

Abstrakty

EN

Photofield emission from SiGe nanoislands formed by molecular beam epitaxy (MBE) have been investigated. Two types of nanoislands, namely the domes and pyramids with different heights, have been addressed. It was found that the arrays of SiGe nanoislands exhibited a low onset voltage for field emission. The increase of emission current and the decrease of the curve slope in Fowler-Nordheim coordinates under green light illumination have been revealed. Electron field emission and photoemission from SiGe nanoislands have been explained based on the energy band diagram of Si-Ge heterostructure and some energy barriers have been determined.

Słowa kluczowe

EN

SiGe nanoislands; electron field emission; photofield emission; emission current; energy band diagram

• Wydawca: Stowarzyszenie Elektryków Polskich ; Polska Akademia Nauk ; Wojskowa Akademia Techniczna im. Jarosława Dąbrowskiego
• Czasopismo: Opto-Electronics Review
• Rocznik: 2018
• Tom: Vol. 26, No. 1
• Strony: 19--23
• Opis fizyczny: Bibliogr. 33 poz., rys., wykr.

Twórcy

autor

Steblova O.

• Taras Shevchenko Kyiv National University, Institute of High Technology, 2 Glushkova avenue, Kiev, 03022, Ukraine

autor

Evtukh A.

• Taras Shevchenko Kyiv National University, Institute of High Technology, 2 Glushkova avenue, Kiev, 03022, Ukraine
• V. Lashkaryov Institute of Semiconductor Physics, 41 prospekt Nauky, 03028 Kyiv, Ukraine

autor

Yilmazoglu O.

• Departemnt of High Frequency Electronics, Technische Universität Darmstadt, 64283, Darmstadt, Germany

autor

Yukhymchuk V.

• V. Lashkaryov Institute of Semiconductor Physics, 41 prospekt Nauky, 03028 Kyiv, Ukraine

autor

Hartnagel H.

• Departemnt of High Frequency Electronics, Technische Universität Darmstadt, 64283, Darmstadt, Germany

autor

Mimura H.

• Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Naka-Ku, Hamamatsu, Japan

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Uwagi

Opracowanie rekordu w ramach umowy 509/P-DUN/2018 ze środków MNiSW przeznaczonych na działalność upowszechniającą naukę (2018).