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60 GHz Front-End Components for Broadband Wireless Communication in 130 nm CMOS Technology

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The over 5 GHz available spectral space allocated worldwide around the 60 GHz band, is very promising for very high data rate wireless short-range communications. In this article we present two key components for the 60 GHz front-end of a transceiver, in 130 nm RF CMOS technology: a single-balanced mixer with high Conversion Gain (CG), reduced Noise Figure (NF) and low power consumption, and an LC cross-coupled Voltage Controlled Oscillator (VCO) with very good linearity, with respect to Vctrl, and very low Phase Noise (PN). In both circuits, custom designed inductors and a balun structure for the mixer are employed, in order to enhance their performance. The VCO’s inductor achieves an inductance of 198 pH and a quality factor (Q) of 30, at 30 GHz. The balun shows less than 1o Phase Imbalance (PI) and less than 0.2 dB Amplitude Imbalance (AI), from 57 to 66 GHz. The mixer shows a CG greater than 15 dB and a NF lower than 12 dB. In addition, the VCO achieves a Phase Noise lower than -106 dBc/Hz at 1 MHz offset, and shows great linearity for the entire band. Both circuits are biased with a 1.2 V supply voltage and the total power consumption is about 10.6 mW for the mixer and 10.92 mW for the VCO.
Twórcy
autor
  • Applied Electronics Laboratory, Electrical & Computer Engineering Department, University of Patras, Greece
  • Applied Electronics Laboratory, Electrical & Computer Engineering Department, University of Patras, Greece
autor
  • Applied Electronics Laboratory, Electrical & Computer Engineering Department, University of Patras, Greece
Bibliografia
  • [1] Smulders, P. (2002). Exploiting the 60 GHz band for local wireless multimedia access: prospects and future directions. IEEE communications magazine, 40(1), 140–147
  • [2] Niknejad, A. M., Hashemi, H. (Eds.). (2008). mm-Wave silicon technology: 60 GHz and beyond. Springer Science & Business Media
  • [3] Daniels, R. C., Heath Jr, R. W. (2007). 60 GHz wireless communications: emerging requirements and design recommendations. IEEE Vehicular Technology Magazine, 2(3), 41–50
  • [4] Shi, J., Li, L., Cui, T. J. (2013, June). A 60-GHz broadband gilbert-cell down conversion mixer in a 65-nm CMOS. In Electron Devices and Solid-State Circuits (EDSSC), 2013 IEEE International Conference of (pp. 1–2). IEEE
  • [5] Tsai, J. H., Wu, P. S., Lin, C. H., Huang, T. W., Huang, W. C. (2007). A 25-75 GHz broadband Gilbert-cell mixer using 90-nm CMOS technology. IEEE Microwave and wireless components letters, 17(4), 247–249
  • [6] Kraemer, M., Ercoli, M., Dragomirescu, D., Plana, R. (2010, December). A wideband single-balanced down-mixer for the 60 GHz band in 65 nm CMOS. In 2010 Asia-Pacific Microwave Conference (pp. 1849–1852). IEEE
  • [7] Emami, S., Doan, C. H., Niknejad, A. M., Brodersen, R. W. (2005, June). A 60-GHz down-converting CMOS single-gate mixer. In 2005 IEEE Radio Frequency integrated Circuits (RFIC) Symposium-Digest of Papers (pp. 163–166). IEEE
  • [8] Hon, M., Chen, Y., Mouthaan, K. (2009, December). Design considerations for a 30 GHz differential Colpitts VCO with high f osc/f T ratio in 0.35µm SiGe BiCMOS. In 2009 Asia Pacific Microwave Conference (pp. 1573–1576). IEEE
  • [9] Wang, J., Wang, Z., Xu, J., Wen, Y. A 30-GHz Low Phase Noise LC VCO and Frequency Divider in 90-nm CMOS Technology. Session 1P9 Analog & RF Circuits and Systems for Emerging Applications, 412
  • [10] Giannakidis, K., Sgourenas, S., Kanteres, A., Kalivas, G., Moustakas, K., Siskos, S. (2016, October). A 17.5-22.5 GHz fractional-N wideband frequency synthesizer in 65 nm CMOS technology. In Microwave Integrated Circuits Conference (EuMIC), 2016 11th European (pp. 209–212). IEEE
  • [11] Shi, J., Yin, W. Y., Kang, K., Mao, J. F., Li, L. W. (2007). Frequency-thermal characterization of on-chip transformers with patterned ground shields. IEEE transactions on microwave theory and techniques, 55(1), 1–12
  • [12] Xu, L., Wei, J. (2012, May). Characterization and analysis of patterned shields for millimeter-wave broadside-coupled balun in CMOS technology. In Microwave and Millimeter Wave Technology (ICMMT), 2012 International Conference on (Vol. 2, pp. 1–4). IEEE
  • [13] Shi, J., Yin, W. Y., Kang, K., Mao, J. F., Li, L. W. (2007). Frequency-thermal characterization of on-chip transformers with patterned ground shields. IEEE transactions on microwave theory and techniques, 55(1), 1-12
  • [14] Kolios, V., Giannakidis, K., Kalivas, G. (2016, May). Transformer & Marchand integrated baluns of extremely small size for 60 GHz applications in 65 nm CMOS technology. In Microwave, Radar and Wireless Communications (MIKON), 2016 21st International Conference on (pp. 1-4). IEEE
Typ dokumentu
Bibliografia
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bwmeta1.element.baztech-90e69763-8e31-441d-880b-f260a5652b5e
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