Electrical and optical properties of spin-coated SnO2 nanofilms

• Autorzy: Izydorczyk W , Waczynski K , Izydorczyk J , Karasinski P , Mazurkiewicz J , Magnuski M , Uljanow J , Waczynska-Niemiec N , Filipowski W

Identyfikatory

DOI

10.2478/s13536-014-0265-2

• Języki publikacji: EN

Abstrakty

EN

SnO2 nanocrystalline thin films have been deposited on oxidized silicon substrates by spin-coating from a precursor solution, followed by slow thermal annealing in oxygen atmosphere at different temperatures (500 to 900 °C). The precursor solution consisted of 1.0 to 2.0 M SnCl4•5H2O in isopropanol. It was shown that the concentration of the precursor solution, annealing temperature and heating rate had a significant effect on the structural, optical and electrical properties of the studied thin films. The topography of SnO2 thin films was examined by scanning electron microscopy (SEM). Furthermore, as-deposited films were characterized by X-ray diffraction (XRD), UV-Vis and impedance spectroscopy.

Słowa kluczowe

EN

spin coating; tin dioxide; UV-Vis spectroscopy; X-ray diffraction

• Wydawca: De Gruyter
• Czasopismo: Materials Science Poland
• Rocznik: 2014
• Tom: Vol. 32, No. 4
• Strony: 729--736
• Opis fizyczny: Bibliogr. 28 poz., rys., wykr., tab.

Twórcy

autor

Izydorczyk W

• Silesian University of Technology, Institute of Electronics, Akademicka 16, 44-100 Gliwice, Poland

autor

Waczynski K

• Silesian University of Technology, Institute of Electronics, Akademicka 16, 44-100 Gliwice, Poland

autor

Izydorczyk J

• Silesian University of Technology, Institute of Electronics, Akademicka 16, 44-100 Gliwice, Poland

autor

Karasinski P

• Silesian University Of Technology, Dept. Of Optoelectronics, B. Krzywoustego 2, 44-100 Gliwice, Poland

autor

Mazurkiewicz J

• Silesian University Of Technology, Institute Of Engineering Materials And Biomaterials, S. Konarskiego 18, 44-100 Gliwice, Poland

autor

Magnuski M

• Silesian University Of Technology, Institute Of Electronics, Akademicka 16, 44-100 Gliwice, Poland

autor

Uljanow J

• Silesian University Of Technology, Institute Of Electronics, Akademicka 16, 44-100 Gliwice, Poland

autor

Waczynska-Niemiec N

• Silesian University of Technology, Institute of Electronics, Akademicka 16, 44-100 Gliwice, Poland

autor

Filipowski W

• Silesian University of Technology, Institute of Electronics, Akademicka 16, 44-100 Gliwice, Poland

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