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Radioelektronika terahercowa - oczekiwania, możliwości i ograniczenia

Identyfikatory
Warianty tytułu
EN
Terahertz radioelectronics - expectations, possibilities and limitations
Języki publikacji
PL
Abstrakty
PL
Artykuł poświęcono przeglądowi stanu osiągnięć uzyskanych w radioelektronice częstotliwości terahercowych oraz możliwości ich zastosowania w terahercowej komunikacji bezprzewodowej. Wyniki ostatnich badań wskazują że bezprzewodowa komunikacja terahercowa, ze względu na swoje możliwości. będzie miała duży wpływ na rozwój przyszłych systemów bezprzewodowych.
EN
The article is devoted to the review of the state of the achievements in the radioelectronics of terahertz frequency and their possible applications in terahertz wireless communications. The results of recent studies indicate that terahertz wireless communication due to its capabilities, will have a big impact on the development of future wireless systems.
Rocznik
Tom
Strony
120--124
Opis fizyczny
Bibliogr. 31 poz., rys.
Twórcy
  • Instytut Radioelektroniki, Wydział Elektroniki i Technik Informacyjnych Politechniki Warszawskiej
autor
  • Instytut Radioelektroniki, Wydział Elektroniki i Technik Informacyjnych Politechniki Warszawskiej
Bibliografia
  • [1] Appleby R., Anderton R.: Millimeter-Wave and Submillimeter –Wave Imaging tor Security and Survillance, IEEE Proceeding, vol. 95. 2007
  • [2] http://www.ska-polska.pl/pl/lab/teraherce-zobac2yc-niewidzialne
  • [3] Woolard D.: Terahertz Electronics Research tor Defense: Novel Technology and Science, US Army Research Laboratory, Army Research Office, RTR NC 27709
  • [4] Lai R. et all: Sub 50 nm lnP HEMT Device with FMAX Greater than 1 THz, in IEEE International Electron Devices Meeting, 2007
  • [5] Geynet B. et all: SiGe HBTs featuring f7 > 400 GHz at room temperature, in IEEE Bipolar/BiCMOS Circuits and Technology Meeting, 2008
  • [6] Heinemann B et all: SiGe HBT technology with fT/fMAX of 300 GHz/500 GHz and 2 0 ps CML gate delay, in IEEE International Electron Devices Meeting, 2010
  • [7] Lee S. et all: Record RF performance of 45-nm SOI CMOS Technology, in IEEE International Electron Devices Meeting 2007
  • [8] Laskin E. Chevalier P., Chantre A., Sautreuil B. and Voinigescu S.P: 165-GHz Transceiver in SiGe Technology. IEEE Journal of Solid-State Circuits, vol. 43. 2008
  • [9] Laskin E., Chevalier P., Sautreuil B. and Voinigescu S.P.: A 140-GHz double-sideband transceiver with amplitude and frequency modulation operating over a few meters, in IEEE Bipolar/BiCMOS Circuits and Technology Meeting, 2009
  • [10] Schmalz K., Winkler W., Borngraber J., Dębski W., Heinemann B. and Scheytt J.C.: 122 GHz ISM-band transceiver concept and silicon ICs for low-cost receiver in SiGe BiCMOS, in International Microwave Symposium, 2010
  • [11] Pfeiffer U.R., Ojefors E. and Yan Z.: A SiGe quadrature transmitter and receiver chipset for emerging high-frequency applications at 160 GHz. in International Solid-State Circuits Conference, 2010
  • [12] Nicolson S.T., Tomkins A., Tang K.W., Cathelin A., Belot D., and Vomigescu S. P: A 1.2 V, 140 GHz receiver with on-die antenna in 65 nm CMOS, in IEEE Radio Frequency Integrated Circuits Symposium, 2008
  • [13] Xu Z. et all: D-band CMOS transmitter and receiver for multi-gigabit/sec wireless data link, in IEEE Custom Integrated Circuits Conference, 2010
  • [14] Fujimoto R., Motoyoshi M., Yodprasit U., Takano K. and Fujishirna M : A 120-GHz transmitter and receiver chipset with 9 Gbit/s data rate using 65-nm CMOS technology, in IEEE Asian Solid State Circuits Conference, 2010
  • [15] Deal W.R. et all: Scaling of InP HE MT Cascode Integrated Circuits to THz Frequencies, in IEEE Compound Semiconductor Integrated Circuit Symposium, 2010
  • [16] Kallfass I. et all: A 200 GHz active heterodyne receiver MM IC with low sub-harmonic LO power requirements for imaging frontends, in European Microwave Integrated Circuits Conference, 2009
  • [17] Abbasi M. et all: Single-Chip 220-GHz active heterodyne receiver and transmitter MM ICs with on-chip integrated antenna, IEEE Transactions on Microwave Theory and Techniques, vol. 59, 2011
  • [18] Drean S., Deltimple N. Kerherve E., Martineau B., Belot D.: A 65 nm CMOS 60 GHz class F-E power amplifier for WF applications, Integrated Circuits and Systems Design (SBCCI), 2012,25lh Symposium on, Aug. 30-Sept. 2, 2012
  • [19] Franc A.L., Pistono E., Glona D., Ferrari P.: High-Performance Shielded Coplanar Waveguides tor the Design of CMOS 60GHz Bandpass Filters Bectron Devices, IEEE Trans On, vol. 59, no 5, May 2012
  • [20] Han-Lin Yue, Yung-Hsiang Chuang, Huey-Ru Chuang: 60 GHz CMOS integrated on-chip Yagi antenna and balun bandpass filter in 90-nm CMOS technology. Antennas and Propagation (EuCAP), 2012 6th European Conference on, 26-30 March 2012
  • [21 ] Xiao-Yue Bao, Yong-Xin Guo, Yong-Zhong Xiong: 60 GHz AMC-Based Circularly Polarized On-Chip Antenna Using 0.18-mm CMOS Technology Antennas and Propagation. IEEE Transactions on, vol. 60, no.5, May 2012
  • [22] Grzyb J., Ruitz I., Cottet D., Troster G.: An investigation of the material and process parameters for thin-dim MCM-D and MCM-L Technologies up to 100 GHz. Electronic Components and Technology Conference, 2003. Proceedings, 53rd, May 27-30, 2003
  • [23] Sangsub Song, Chan-Sei Yoo, Donghwan Kim, Sung-Soon Choi, Jong-Chul Park, Kwang-Seok Seo: Development of Millimeter-wave Integrated Passives on MCM-D Technology with Thin-Film Microstrip Line, Microwave Symposium Digest, IEEE MTT-S International, 11-16 June 2006
  • [24] Wu K.L., Huang Y.: LTCC Technology and Its Applications in High Frequency Front End Modules. Proceedings of The 6th International Symposium on Antennas, Propagation and EM Theory, Beijing, 28.10-01 11.2003
  • [25] Xu J., Chen Z.N., Qing X., Hong W.: 140 GHz Planar SIW Slot Antenna Array with a Large-Via-Fence Dielectric Loading in LTCC, The 6th European Conference on Antennas and Propagation. Prague. 26.03-30.03.2012
  • [26] Khalil A., Passerieux D., Baillargeat D., Verdeyme S., Rigaudeau L,. Puech J.: 750 GHz Sand-Pass Filter Using LTCC Technology, IEEE Microwave and Wireless Components Letters, vol. 19, issue 7, 2009
  • [27] Lucyszyn, Silva S.R.P, Robertson I.D., Collier R.J., Jastrzębski AK., Thayne I.G., Beaumont S.P: Terahertz Multi-chip module (T-MCM) technology for the 21st century ? In IEE Colloquium on Multi-chip Modules and RFICs (London, UK), May 1998
  • [28] Jansen R.H., Koster N.H.L.: New aspects concerning the definition of microstrip characteristic impedance as a function of frequency in IEEE MTT-S Int. Dg., 1982
  • [29] Collier R., Coupling between coplanar waveguides and substrate modes, in 29th European Microwave Conf., December 1989
  • [30] Riley G.A.: Introduction of flip chip: what, why, how?, http://www.flip-chips.com/RileyWPO1.pdf, December 15, 2008
  • [31] Ojefors E., Sonmez E., Chartier S., Schich C., Lindberg P., Rydbrg, Schumacher H : Monolithic integration of a folded dipole antenna with a 24 GHz receiver A in SiGe HBT technology IEEE Trans Microwave and Technol. 55(2007)
Typ dokumentu
Bibliografia
Identyfikator YADDA
bwmeta1.element.baztech-8f49bd75-d42a-4db6-9933-4a886f706510
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