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Uncooled IR photodetectors for smart munitions

Wybrane pełne teksty z tego czasopisma
Identyfikatory
Warianty tytułu
Konferencja
Problemy rozwoju, produkcji i eksploatacji techniki uzbrojenia / IX Konferencja Naukowo-Techniczna (IX ; maj 2000 ; Rynia, Polska)
Języki publikacji
EN
Abstrakty
EN
Recent developments in uncooled infrared photodetectors for smart munitions are reviewed. We discuss fundamental limits to performance and barriers in practical implementation of the devices. The performance of infrared detectors is fundamentally limited at a low level by the noise due to statistical nature of the thermal generation and recombination processes. There are also technological problems in to achieve this level in practice. An advanced photovoltaic detector operating at ambient temperature in the MWIR and LWIR range, which overcomes existing difficulties, is reported. The device is based on 3-dimentional HgCdTe heterostructures monolithically immersed to ≈50x50 μm microlenses, which are formed directly in. the substrate with photolithography, wet etching and ion milling. The heterostructures are supplied with passivation and metal layers, which also act as the backside reflector and optical barrier preventing unwanted optical generation due to backside thermal background. Calculation shows that the 2D arrays of the devices are capable to achieve thermal resolution of 0.05 K for 30/sec frame rate und F#=2, optics which promises wide scale applications in smart munitions.
Rocznik
Strony
29--49
Opis fizyczny
Bibliogr. 22 poz., rys., wykr.
Twórcy
  • Military Institute of Armament Technology
  • Military Institute of Armament Technology
Bibliografia
  • 1. J. W. Sherman, “Automatic target recognition systems”, The lnfrared & Electrooptical Systems Handbook, SPIE, Bellingham (1993).
  • 2. T. L. Williams, J. H. Ludlow, "lntroduction to military thermal imaging", SIRA Technology Center, London (1994).
  • 3. G. Gaussorges, La thermographie lnfrarouge, Lavoiser, Paris, (1984).
  • 4. R. Hudson and J. Hudson, "lnfrared Detectors", Hutchinson and Ross, Wiley (1975).
  • 5. G. A. Findlay, D. A Cutten, "Comparison of performance of 3-5- and 8-12 µm infrared systems, "Appl. Opt. 28,5029-5037(1989).
  • 6. Z. R. B. Johnson, "Relative merits of the 3-5 µm and 8-12 µm spectra! bands" Proc. SPIE, 917,102-107 (1988).
  • 7. T. Jaeger, A. Nordbryhn, P.A. Stokseth, "Detection of low contrast targets at 5 µm and 10 µm: a comparison", Appl. Opt. 11,1833-1835 (1972).
  • 8. R. Longshore, P. Raimondi, M. Lumpkin,"Selection of detector peak wavelength for optimum infrared systems performance", lnfrared Phys.,16, 639-647 (1976).
  • 9. M. Studencki, „Optymalizacja fotodetektorów do układów śledzących w podczerwieni”, rozprawa WAT 1999 r.
  • 10. J. Piotrowski and A. Rogalski, "Detektory promieniowania podczerwonego", WNT, W-wa (1985).
  • 11. Piotrowski, W. Galus and M. Grudzien, "Near Room-Temperature IR Photodetectors". lnfrared Phys. 31, 1-48 (1991).
  • 12. C. T. Elliott and N. T. Gordon, "lnfrared Detectors", in Handbook on Semiconductors, Vol. 4, pp. 841-936, edited by C. Hilsum, North-Holland, Amsterdam (1993).
  • 13. Piotrowski, “Hg1-xCdxTe lnfrared Photodetectors,” in lnfrared Photodetectors, 391- 494, SPIE, Bellingham (1995).
  • 14. J. Piotrowski and W. Gawron. "Ultimate Performance of lnfrared Photodetectors and Figure of Merit of Detector Materiał", lnfrared Physics and Technology 38, 63-68 (1997).
  • 15. Elliott CT, Gordon NT, Phillips TJ, Steen H, White AM, Wilson DJ, Jones CL, Maxey CD and Metcalfe NE, “Minimally cooled heterojunction laser heterodyna detectors in MOVPE grown Hg1-xCdxTe”, J. Electron. Mat. 25(8), 1146-1150 (1996).
  • 16. “Uncooled lmaging Arrays and Systems”. Ed. by P. W. Kruse and D. D. Skatrud, Semiconductor and Semimetals, 47, 1-16 (1997).
  • 17. J. Piotrowski, "Breakthrough in infrared technology- The micromachined detector arrays". Opto-Electronics Rev, 3, 3-11 (1995).
  • 18. R. G. Humpreys, "Radiative lifetime in semiconductors for infrared detection," lnfrared Phys. 23, 171-175 (1983); "Radiative lifetime in semiconductors for infrared detection," lnfrared Phys. 26, 337-342 (1986).
  • 19. VIGO SYSTEM DATA SHEETS. Warsaw (2000); www.vigo.com.pl
  • 20. J. Piotrowski, Z. Nowak, M. Grudzień, W. Galus, K. Adamiec, Z. Djurić, V. Jović, Z. Djinović. "High capability, quasi-closed growth system for isothermal vapour phase epitaxy of (Hg,Cd)Te". Thin Solid Films, 161, 157-169. (1988).
  • 21. J. Piotrowski, Z. Nowak, J. Antoszewski, C. Musca, J. Dell, and L. Faraone, "A novel multi-heterojunction HgCdTe long-wavelength infrared photovoltaic detector for operation under reduced cooling conditions", Semicond. Sci. Technol. 13, 1209-1214 (1998).
  • 22. J. Piotrowski. Unpublished results. WITU, Warsaw (1999).
Typ dokumentu
Bibliografia
Identyfikator YADDA
bwmeta1.element.baztech-8ed9134c-b002-4dcc-bc7e-58f7038fcabe
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