Electro-optic coefficients of a non-congruent lithium niobate fabricated by vapour transport equilibration : Composition effect

• Autorzy: Xu J.-Q. , Du W.-Y… , Sua Q. , Wong W.-H. , Yu D.-Y. , Pun E. Y.-B. , Zhang D.-L.

Identyfikatory

DOI

10.1016/j.opelre.2017.04.001

• Języki publikacji: EN

Abstrakty

EN

Composition effect on electro-optic (EO) properties of a LiNbO₃ (LN) single-crystal has been investigated in a Li₂O-content range of 47.0-49.95 mol%. Some non-congruent LN crystals with different Li₂O-contents were prepared by performing Li-deficient or Li-rich vapour transport equilibration treatments on as-grown congruent LN crystals. Unclamped EO coefficients γ₁₃ and γ₃₃ of these samples were measured by a Mach-Zehnder interferometric method. The measurements show that in the Li-deficient regime both γ₁₃ and γ₃₃ increase by ∼8% as Li₂O-content decreases from the congruent 48.6 mol% to the 47.0 mol% in the Li-deficient regime. The feature is desired for the EO application of the Li-deficient crystal. In the near-stoichiometric regime, both γ ₁₃ and γ₃₃ reveal a non-monotonic dependence. As the Li₂O-content increases from the 48.6 mol%, the EO coefficient decreases. Around Li₂O-content 49.5 mol%, a minimum is reached. After that, the EO coefficient recovers slowly. At the stoichiometric composition, it recovers to a value close to that at the congruent point. Comparison shows that different crystal growth methods give rise to different defect structure features and hence different composition effects.

Słowa kluczowe

EN

LiNbO3 single-crystal; electro-optic property; composition effect; defects

• Wydawca: Stowarzyszenie Elektryków Polskich ; Polska Akademia Nauk ; Wojskowa Akademia Techniczna im. Jarosława Dąbrowskiego
• Czasopismo: Opto-Electronics Review
• Rocznik: 2017
• Tom: Vol. 25, No. 2
• Strony: 89--92
• Opis fizyczny: Bibliogr. 32 poz., rys., tab., wykr.

Twórcy

autor

Xu J.-Q.

• Department of Opto-electronics and Information Engineering, School of Precision Instruments and Opto-electronics Engineering, Tianjin University, Tianjin 300072, China
• Key Laboratory of Optoelectronic Information Technology (Ministry of Education), Tianjin University, Tianjin 300072, China

autor

Du W.-Y…

• Department of Opto-electronics and Information Engineering, School of Precision Instruments and Opto-electronics Engineering, Tianjin University, Tianjin 300072, China
• Key Laboratory of Optoelectronic Information Technology (Ministry of Education), Tianjin University, Tianjin 300072, China

autor

Sua Q.

• Department of Opto-electronics and Information Engineering, School of Precision Instruments and Opto-electronics Engineering, Tianjin University, Tianjin 300072, China
• Key Laboratory of Optoelectronic Information Technology (Ministry of Education), Tianjin University, Tianjin 300072, China

autor

Wong W.-H.

• Department of Opto-electronics and Information Engineering, School of Precision Instruments and Opto-electronics Engineering, Tianjin University, Tianjin 300072, China
• Key Laboratory of Optoelectronic Information Technology (Ministry of Education), Tianjin University, Tianjin 300072, China
• Department of Electronic Engineering and State Key Laboratory of Millimeter Waves, City University of Hong Kong, 83 Tat Chee Avenue, Kowloon, Hong Kong, People’s Republic of China

autor

Yu D.-Y.

• Department of Opto-electronics and Information Engineering, School of Precision Instruments and Opto-electronics Engineering, Tianjin University, Tianjin 300072, China
• Key Laboratory of Optoelectronic Information Technology (Ministry of Education), Tianjin University, Tianjin 300072, China

autor

Pun E. Y.-B.

• Department of Electronic Engineering and State Key Laboratory of Millimeter Waves, City University of Hong Kong, 83 Tat Chee Avenue, Kowloon, Hong Kong, People’s Republic of China

autor

Zhang D.-L.

• Department of Opto-electronics and Information Engineering, School of Precision Instruments and Opto-electronics Engineering, Tianjin University, Tianjin 300072, China
• Key Laboratory of Optoelectronic Information Technology (Ministry of Education), Tianjin University, Tianjin 300072, China
• Department of Electronic Engineering and State Key Laboratory of Millimeter Waves, City University of Hong Kong, 83 Tat Chee Avenue, Kowloon, Hong Kong, People’s Republic of China

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Uwagi

PL

Opracowanie ze środków MNiSW w ramach umowy 812/P-DUN/2016 na działalność upowszechniającą naukę (zadania 2017)