Synthesis, surface tension, optical and dielectric properties of bismuth oxide thin film

• Autorzy: Tezel F. M. , Kariper A. I.

Identyfikatory

DOI

10.1515/msp-2017-0020

• Języki publikacji: EN

Abstrakty

EN

Bismuth oxide thin film was deposited by chemical bath deposition (CBD) technique onto a glass substrate. The grain size (D), dislocation density (δ) and number of crystallites per unit area (N), i.e. structural properties of the thin film were determined as 16 nm, 39.06 x 10^-4 line/nm², 31.25 x 10^-3 1/nm², respectively. Optical transmittance properties of the thin film were investigated by using a UV-Vis spectrophotometer. The optical band gap (E_g) for direct transitions, optical transmission (T %), reflectivity (R %), absorption, refractive index (n_r), extinction coefficient (k), dielectric constant (ϵ) of the thin film were found to be 3.77 eV, 25.23 %, 32.25 %, 0.59, 3.62, 0.04 and 2.80, respectively. The thickness of the film was measured by AFM, and was found to be 128 nm. Contact angles of various liquids on the oxide thin film were determined by Zisman method, and surface tension was calculated to be 31.95 mN/m.

Słowa kluczowe

EN

CBD technique; crystal growth; Zisman method; optical properties; surface tension

• Wydawca: De Gruyter
• Czasopismo: Materials Science Poland
• Rocznik: 2017
• Tom: Vol. 35, No. 1
• Strony: 87--93
• Opis fizyczny: Bibliogr. 35 poz., rys., tab.

Twórcy

autor

Tezel F. M.

• Department of Metallurgy and Materials Engineering, Faculty of Engineering, Karabuk University, 78050, Karabuk, Turkey

autor

Kariper A. I.

• Department of Science Education, Education Faculty, Erciyes University, 38039, Kayseri, Turkey

Bibliografia

• [1] BANDOLI G., BARECCA D., BRESCACIN E., RIZZI G.A., TONDELLO E., Chem. Vapor Depos., 2 (1996), 238.
• [2] HYODO T., KANAZAWA E., TAKAO Y., SHIMIZU Y., EGASHIRA M., Electrochemistry, 68 (2000), 24.
• [3] SCHUISKY M., HARSTA A., Chem. Vapor Depos., 2 (1996), 235.
• [4] PAN A., GHOSH A., J. Non-Cryst. Solids, 271 (2000), 157.
• [5] GOBRECHT H., SEECK S., BERGT H.-E., MARTENS ¨ A., KOSSMANN K., Phys. Status Solidi, 33 (1969), 599.
• [6] DOLOCAN V., IOVA F., Phys. Status Solidi A, 64 (1981), 755.
• [7] DOLOCAN V., Appl. Phys. A-Mater., 16 (1978), 405.
• [8] LEONTIE L., CARAMAN M., DELIBAS ¸ M., RUSU G.I., Mater. Res. Bull., 36 (2001), 1629.
• [9] LEONTIE L., CARAMAN M., RUSU G.I., J. Optoelectron. Adv. M., 2 (2000), 385.
• [10] CONDURACHE-BOTA S., RUSU G.I., TIGAU N., DRAS ¸ OVEAN R., GHEORGHIES C., Rev. Roum. Chim., 54 (2009), 205.
• [11] LEONTIE L., CARAMAN M., ALEXE M., HARNAGEA C., Surf. Sci., 507 – 510 (2002), 480.
• [12] HARWIG H.A., Z. Anorg. Allg. Chem., 444 (1978), 151.
• [13] SHUK P., WIEMHOFER H.-D., GUTH U., GOPEL W., GREENBLATT M., Solid State Ionics, 89 (1996), 179.
• [14] RAID I.A., e-JSSNT, 4 (2006), 563.
• [15] HUANG C.C., WEN T.Y., FUNG K.Z., Mater. Res. Bull., 41 (2006), 110.
• [16] KUMARI L., LIN J.H., MA Y.R., J. Phys. D Appl. Phys., 41 (2008), 025405.
• [17] GOTIC M., POPOVIC S., MUSIC S., Mater. Lett., 61 (2007), 709.
• [18] PATIL M.M., DESHPANDE V.V., DHANGE S.R., RAVI V., Mater. Lett., 59 (2005), 2523.
• [19] FAN H.T., PAN S.S., TENS X.M., YE C., LI G.H., ZHANG L.D., Thin Solid Films, 513 (2006), 142.
• [20] LEONTIE L., CARAMAN M., VISINOIU A., RUSU G.I., Thin Solid Films, 473 (2005), 230.
• [21] KANG S.W., RHEE S.W., Thin Solid Films, 468 (2004), 79.
• [22] CULLITY B.D., Elements of X-ray Diffraction, 2nd Edition, Addison-Wessley, California, 1978, p. 102.
• [23] MOTT N.F., DAVIS E.A., Electronic Processes in NonCrystalline Materials, Clarendon Press, Oxford, 1979, p. 273.
• [24] MAMAZZA R., MOREL D.L., FEREKIDES C.S., Thin Solid Films, 484 (2005), 26.
• [25] PEJOVA B., GROZDANOV I., TANUSEVSKI A., Mater. Chem. Phys., 83 (2004), 245.
• [26] AKALTUN Y., YILDIRIM M.A., ATES A., YILDIRIM M., Opt. Commun., 284 (2011), 2307.
• [27] MAHALINGAM T., JOHN V.S., RAJENDRAN S., SEBASTIAN P.J., Semicond. Sci. Tech., 17 (2002), 465.
• [28] THANIKAIKARASAN S., MAHALINGAM T., RAJA M., KIM T., KIM Y.D., J. Mater. Sci. Mater. El., 20 (2009), 727.
• [29] YILDIRIM M.A., ATES A., Opt. Commun., 283 (2010), 1370.
• [30] SHINDE V.R., LOKHANDE C.D., MANE R.S., SUNGHWAN H., Appl. Surf. Sci., 245 (2005), 407.
• [31] KROGH-MOE J., Phys. Chem. Glasses-B, 6 (1965), 46.
• [32] TYAGI P., VEDESHWAR A.G., Physica B, 304 (2001), 166.
• [33] KONIJNENDIJK W., STEVELS J., J. Non-Cryst. Solids, 20 (1976), 193.
• [34] FOX H. W., ZISMAN W. A., J. Colloid Sci., 7 (1952), 109.
• [35] GOBRECHT H., SEECK S., BERGT H.-E., MARTENS ¨ A., KOSSMANN K., Phys. Status Solidi, 34 (1969), 569.

Uwagi

Opracowanie ze środków MNiSW w ramach umowy 812/P-DUN/2016 na działalność upowszechniającą naukę (zadania 2017).