Stress evolution mechanism and thermo-mechanical reliability analysis of copper-filled TSV interposer

• Autorzy: Chen Yuan , Su Wei , Huang Hong-Zhong , Lai Ping , Lin Xiao-ling , Chen Si

Identyfikatory

DOI

10.17531/ein.2020.4.14

• Języki publikacji: EN

Abstrakty

EN

Through silicon via (TSV) has become one of the key emerging trends of three-dimensional (3D) packages, as it can realize vertically interconnect between stacked-dies. Due to large mismatch in thermal expansion coefficients (CTE) between the copper via and the silicon, significant mechanical stresses are induced at the interfaces when TSV structure is subjected to thermal stresses, which would greatly affect the reliability and electrical performance of TSV 3D device. In this paper, the relationship between the state of stresses and failure of TSV had been explored by combining finite element model simulation (FEM) and failure physical analysis. The position of the maximum stress of the TSV structure was obtained by FEM analysis. The relationship of stress and displacement change with temperature was also studied. And a thermal cycling experiment was conducted to validate the simulation results. Physical failure analysis after thermal cycling experiment was used to verify the degradation mechanism predicted by thermo-mechanical simulation.

Słowa kluczowe

EN

through silicon vias; thermo-mechanical reliability; failure mechanism; finite element analysis; 3D integrated packaging; thermal cycling experiment

• Wydawca: Polskie Naukowo-Techniczne Towarzystwo Eksploatacyjne
• Czasopismo: Eksploatacja i Niezawodność
• Rocznik: 2020
• Tom: Vol. 22, no. 4
• Strony: 705--714
• Opis fizyczny: Bibliogr. 32 poz., rys., tab.

Twórcy

autor

Chen Yuan

• Center for System Reliability and Safety, School of Mechanical and Electrical Engineering University of Electronic Science and Technology of China, Sichuan, 611731, P. R. China
• Science and Technology on Reliability Physics and Application of Electronic Component Laboratory, The Fifth Electronics Research Institute of Ministry of Industry and Information Technology, Guangdong, 510610, P. R. China

autor

Su Wei

• Science and Technology on Reliability Physics and Application of Electronic Component Laboratory, The Fifth Electronics Research Institute of Ministry of Industry and Information Technology, Guangdong, 510610, P. R. China

autor

Huang Hong-Zhong

• Center for System Reliability and Safety, School of Mechanical and Electrical Engineering University of Electronic Science and Technology of China, Sichuan, 611731, P. R. China

autor

Lai Ping

• Science and Technology on Reliability Physics and Application of Electronic Component Laboratory, The Fifth Electronics Research Institute of Ministry of Industry and Information Technology, Guangdong, 510610, P. R. China

autor

Lin Xiao-ling

• Science and Technology on Reliability Physics and Application of Electronic Component Laboratory, The Fifth Electronics Research Institute of Ministry of Industry and Information Technology, Guangdong, 510610, P. R. China

autor

Chen Si

• Science and Technology on Reliability Physics and Application of Electronic Component Laboratory, The Fifth Electronics Research Institute of Ministry of Industry and Information Technology, Guangdong, 510610, P. R. China

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Uwagi

Opracowanie rekordu ze środków MNiSW, umowa Nr 461252 w ramach programu "Społeczna odpowiedzialność nauki" - moduł: Popularyzacja nauki i promocja sportu (2021).