Characterization of a-C:N:H, a-SiNx:H and a-SiCx:Ny:H layers deposited on various substrates

• Autorzy: Dyndał K.

Identyfikatory

DOI

10.15199/28.2018.6.1

Warianty tytułu

PL

Charakterystyka warstw a-C:N:H, a-SiNx:H i a-SiCxNy:H osadzanych na różnych podłożach

• Języki publikacji: EN

Abstrakty

EN

Amorphous hydrogenated carbon nitride layers, a-C:N:H, amorphous hydrogenated silicon nitride layers, a-SiNx:H and amorphous hydrogenated silicon carbonitride, a-SiCxNy:H, layers, fabricated on borosilicate glass and (001) oriented Czochralski silicon wafers by plasma assisted chemical vapour deposition, 13.56 MHz, were compared in this study. For reliable comparison the processing parameters, except temperature, were kept at the same level in each experiment. The layers containing silicon were grown at 473 K, while the layers without silicon were grown at 298 K. Methane, nitrogen and silane gaseous were used as carbon, nitrogen and silicon gaseous precursors respectively. The layers were subjected to structural studies by FTIR spectroscopy. The thicknesses of the layers and optical constants’ functions: refractive index n (λ) and extinction coefficient k (λ), were determined by spectroscopic ellipsometry. Wollam M2000 ellipsometer was used to measure ellipsometric angles Psi (Ψ) and Delta (Δ) within 200÷1800 nm spectral range at three different angles of incidence 65°, 70° and 75°. The differences between structure and properties of the layers were indicated, as well as differences between the same layers deposited on various substrates. The results show that the layers grown on glass and Si are similar materials. Optical constants do not differ much. However, clear differences are seen, when thicknesses of the layers are compared. As a rule, the layers deposited on glass are thicker. A proposed explanation is related to the energy of the bonds C–O and Si–O for the layers deposited on glass and C–Si and Si–Si when the layers were deposited on Si wafers.

PL

Metoda PACVD należy do obiecujących metod inżynierii powierzchni. Pozwala modyfikować warstwę wierzchnią różnego typu materiałów, jak metale, szkło, a nawet polimery, z zastosowaniem zróżnicowanych warstw pod względem składu chemicznego i struktury. Zastosowanie plazmy jako ośrodka niekonwencjonalnej syntezy pozwala obniżyć temperaturę procesu, co jest szczególnie korzystne w przypadku podłoży wrażliwych na działanie wysokiej temperatury. Technika PACVD wymaga ścisłego określenia parametrów procesu: temperatury, ciśnienia, mocy generatora plazmy, czasu osadzania, rodzaju i przepływu gazowych reagentów. Celem tej pracy jest wyznaczenie i porównanie grubości oraz właściwości optycznych (współczynników załamania i współczynników ekstynkcji) warstw osadzonych na szkle borokrzemowym i monokrystalicznym krzemie Si (001) z zastawaniem metody PACVD, 13,56 MHz. Otrzymane i badane były amorficzne uwodornione warstwy: węgla dotowanego azotem (a-C:N:H), azotku krzemu (a-SiNx:H) oraz węgloazotku krzemu (a-SiCxNy:H).

Słowa kluczowe

EN

PACVD; amorphous layer; spectroscopic ellipsometry; optical properties

PL

PACVD; warstwy amorficzne; elipsometria spektroskopowa; właściwości optyczne

• Wydawca: Wydawnictwo SIGMA-NOT
• Czasopismo: Inżynieria Materiałowa
• Rocznik: 2018
• Tom: Vol. 39, nr 6
• Strony: 198--203
• Opis fizyczny: Bibliogr. 25 poz., fig., tab.

Twórcy

autor

Dyndał K.

• AGH University of Science and Technology, Faculty of Materials Science and Ceramics

Bibliografia

• [1] Torrent F., Lavisse L., Berger P., Pillon G.: Influence of the composition of titanium oxynitride layers on the fretting behavior of functionalized titanium substrates: PVD films versus surface laser treatments. Surf. Coat. Technol. 255 (2014) 146÷152.
• [2] Tkacz-Śmiech K., Koper K., Mikuła A., Jaglarz J., Sahraoui B.: Structural and optical characterization of carbon nitride layers deposited by plasma assisted chemical vapor deposition at various conditions. Thin Solid Films 646 (2018) 28÷35.
• [3] Tkacz-Śmiech K., Dyndał K., Sanetra J., Jaglarz J.: Comparison of a-C:N:H layers grown at the anode and cathode in RF–PACVD processing. Vacuum 146 (2017) 15÷21.
• [4] Písařík P., Jelínek M., Remsa J., Mikšovský J., Zemek J., Jurek K., Kubinová Š., Lukeš J., Šepitka J.: Antibacterial, mechanical and surface properties of Ag-DLC films prepared by dual PLD for medical applications. Mater. Sci. Eng. C 77 (2017) 955÷962.
• [5] Hasabeldaim E., Ntwaeaborwa O. M., Kroon R. E., Motaung D. E., Coetsee E., Swart H. C.: Effect of PLD growth atmosphere on the physical properties of ZnO:Zn thin films. Optical Materials 74 (2017) 76÷85.
• [6] Kyzioł K., Jonas S., Tkacz-Śmiech K., Marszałek K.: A role of parameters in RF PACVD technology of a-C:N:H layers. Vacuum 82 (2008) 998÷1002.
• [7] Kikuchi Y., Chang X., Sakakibara Y., Inoue K. Y., Matsue T., Nozawa T., Samukawa S.: Amorphous carbon nitride thin films for electrochemical electrode: Effect of molecular structure and substrate materials. Carbon 93 (2015) 207÷216.
• [8] Vangelista S., Piagge R., Ek S., Sarnet T., Ghidini G., Martella C., Lamperti A.: Structural, chemical and optical properties of cerium dioxide film prepared by atomic layer deposition on TiN and Si substrates. Thin Solid Films 636 (2017) 78÷84.
• [9] Basak A., Hati A., Mondal A., Singh U. P., Taheruddin S. K.: Effect of substrate on the structural, optical and electrical properties of SnS thin films grown by thermal evaporation method. Thin Solid Films 645 (2018) 97÷101.
• [10] Pal D., Singhal J., Mathur A., Singh A., Dutta S., Zollner S., Chattopadhyay S.: Effect of substrates and thickness on optical properties in atomic layer deposition grown ZnO thin films. Appl. Surf. Sci. (2017) 341÷348.
• [11] Pieczyńska E., Jaglarz J., Marszalek K., Tkacz-Śmiech K.: Thermo-Optical Parameters of Amorphous a-C:N:H layers. Acta Phys. Pol. A 126 (2014) 1241÷1245.
• [12] Yang J., Guzman R. C., Salley S. O., Ng K. Y. S., Chen B. H., Ming- Cheng Cheng M.: Plasma enhanced chemical vapor deposition silicon nitride for a high-performance lithium ion battery anode. J. Power Sources 269 (2014) 520÷525.
• [13] Picciotto A., Bagolini A., Bellutti P., Boscardin M.: Influence of interfaces density and thermal processes on mechanical stress of PECVD silicon nitride. Appl. Surf. Sci. 256 (2009) 251÷255.
• [14] Ferreira I., Fortunato E., Vilarinho P., Viana A. S., Ramos A. R., Alves E., Martins R.: Hydrogenated silicon carbon nitride films obtained by HWCVD, PA–HWCVD and PECVD techniques. J. Non-Cryst. Solids 352 (2006) 1361÷1366.
• [15] Ermakova E., Rumyantsev Y., Shugurov A., Paninb A., Kosinova M.: PECVD synthesis, optical and mechanical properties of silicon carbon nitride films. Appl. Surf. Sci. 339 (2015) 102÷108.
• [16] Charitidis C. A: Nanochemical and nanotribological properties of carbonbased thin films: A review. Int. J. Ref. Metal. Hard Mater. 28 (2010) 51÷70.
• [17] Zou Y. S., Wu Y. F., Huang R. F., Sun C., Wen L. S.: Mechanical properties and thermal stability of nitrogen incorporated diamond-like carbon films. Vacuum 83 (2009) 1406÷1410.
• [18] Dwivedi N., Kumar S., Malik H. K., Rauthan C. M. S., Panwar O. S.: Superhard behaviour, low residual stress, and unique structure in diamondlike carbon films by simple bilayer approach. J. Appl. Phys. 112 (2012) 023518÷023518–15.
• [19] Vallade J., Pouliquen S., Lecouvreur P., Bazinette R., Hernandez E., Quoizola S., Massines F.: a-SiNx:H antireflective and passivation layer deposited by atmospheric pressure plasma. Energy Procedia 27 (2012) 365÷371.
• [20] Jurzecka M., Kluska S., Jonas S., Czternastek H., Zakrzewska K.: RF PE CVD deposition of amorphous a-SixNy:H layers for application in solar cells. Vacuum 82 (2008) 1128÷1132.
• [21] Hong B., Cheng K., Wu X. M.: Structure and photoluminescence properties of SiCN films grown by dual ion beam reactive sputtering deposition. Vacuum 101 (2014) 205÷207.
• [22] Ivashchenko V. I., Porada O. K., Ivashchenko L. A., Rusakov G. V., Dub S. M., Popov V. M.: Hydrogenated amorphous silicon carbide films as perspectivetribological coatings and semiconductor layers. Hydrogen Mater. Sci. Chem. Carbon Nanomater. 172 (2005) 339÷346.
• [23] Ming Z., De Yuan X., Min P. S., Shan H. Z., Xie S. Y.: Experimental study of multilayer SiCN barrier film in 45/40 nm technological node and beyond. Microelectron Reliab. 57 (2016) 86÷92.
• [24] Jaglarz J., Wagner T., Cisowski J., Sanetra J.: Ellipsometric studies of carbazole containing polymer layers. Opt. Mater. 29 (2007) 908÷912.
• [25] Fujiwara H.: Principles of spectroscopic ellipsometry. In: Spectroscopic Ellipsometry: Principles and Applications. John Wiley & Sons, Ltd, Chichester (2007).

Uwagi

Opracowanie rekordu w ramach umowy 509/P-DUN/2018 ze środków MNiSW przeznaczonych na działalność upowszechniającą naukę (2018).