Junction configurations and their impacts on Cu(In,Ga)Se₂ based solar cells performances

• Autorzy: Guirdjebaye N. , Ouédraogo Soumaila , Ngoupo Ariel , Tcheum G. L. , Ndjaka Jean Marie Bienvenu

Identyfikatory

DOI

10.1016/j.opelre.2019.02.001

• Języki publikacji: EN

Abstrakty

EN

One dimension solar cells simulator package (SCAPS) is used to study the possibility of carrying out thin CIGS solar cells with high and stable efficiency. In the first step, we modified the conventional ZnO:B/i-ZnO/CdS/SDL/CIGS/Mo structure by substituting the SDL layer with the P₊ layer, having a wide bandgap from 1 to l.12 eV. Then, we simulated the J-V characteristics of this new structure and showed how the electrical parameters are affected. Conversion efficiency of 18.46% is founded by using 1.1 μm of P + layer thickness. Secondly, we analyze the effect of increase thickness and doping density of CIGS, CdS and P₊ layers on the electric parameters of this new structure. We show that only the short-circuit current density (JSC) and efficiency are improved, reaching respectively 34.68 mA/cm2 and 18.85%, with increasing of the acceptors density. Finally, we introduced 10 nm of various electron reflectors at the CIGS/Mo interface in the new structure to reduce the recombination of minority carriers at the back contact. High conversion efficiency of 23.34% and better stability are obtained when wide band-gap BSF is used.

Słowa kluczowe

EN

defect density; P₊ layer; back surface field; CIGS; SCAPS-1D

• Wydawca: Stowarzyszenie Elektryków Polskich ; Polska Akademia Nauk ; Wojskowa Akademia Techniczna im. Jarosława Dąbrowskiego
• Czasopismo: Opto-Electronics Review
• Rocznik: 2019
• Tom: Vol. 27, No. 1
• Strony: 70--78
• Opis fizyczny: Bibliogr. 30 poz., wykr.

Twórcy

autor

Guirdjebaye N.

• Département de Physique, Faculté des Sciences, Université de Yaoundé 1, BP 812, Yaoundé, Cameroon

autor

Ouédraogo Soumaila

• Laboratoire des Matériaux et Environnement (LAME), UFR-SEA, Université de Ouagadougou, BP 7021, Ouaga 03, Burkina Faso

autor

Ngoupo Ariel

• Département de Physique, Faculté des Sciences, Université de Yaoundé 1, BP 812, Yaoundé, Cameroon

autor

Tcheum G. L.

• Département de Physique, Faculté des Sciences, Université de Yaoundé 1, BP 812, Yaoundé, Cameroon

autor

Ndjaka Jean Marie Bienvenu

• Département de Physique, Faculté des Sciences, Université de Yaoundé 1, BP 812, Yaoundé, Cameroon

Bibliografia

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Uwagi

Opracowanie rekordu w ramach umowy 509/P-DUN/2018 ze środków MNiSW przeznaczonych na działalność upowszechniającą naukę (2019).